Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Hisanori Matsuo"'
Autor:
Seonho Jeong, Jongmin Jeong, Yeongil Shin, Youngwook Park, Masashi Kabasawa, Hirokuni Hiyama, Katsuhide Watanabe, Hisanori Matsuo, Yutaka Wada, Haedo Jeong
Publikováno v:
Japanese Journal of Applied Physics. 62:SH1003
In general, the shape of the polished pattern is not flat but has a rounded curved profile. Unlike micro-patterns that have similar scales to pad asperities, macro-patterns have a very large scale compared to asperities, so bulk deformation must also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eb1a2c84d30a5aaf8490d05d39446b1
https://doi.org/10.35848/1347-4065/acc9cd
https://doi.org/10.35848/1347-4065/acc9cd
Publikováno v:
Solid State Phenomena. 314:186-191
Visualization experiments were performed to examine whether acoustic bubbles play a role in ultrasonic water flow cleaning, as in convention cleaning with ultrasonic baths. Schlieren visualization confirmed the standing-wave-like acoustic field in ul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca326924fbb412366ca77f5d52b63d63
https://doi.org/10.4028/www.scientific.net/ssp.314.186
https://doi.org/10.4028/www.scientific.net/ssp.314.186
Publikováno v:
Japanese Journal of Applied Physics. 62:SH8001
We have developed a technique for observing fine wiring patterns using moiré patterns generated by interference between wiring patterns and reference patterns in endpoint detection (EPD) of the CMP. With this technique, wiring pattern images of patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93d23613e1355797de4ec916250748d5
https://doi.org/10.35848/1347-4065/acb4f7
https://doi.org/10.35848/1347-4065/acb4f7
Autor:
Takashi Yamada, Shumpei Miura, Tomoatsu Ishibashi, Naoki Ono, Hisanori Matsuo, Katsuhide Watanabe
Publikováno v:
ECS Transactions. 92:107-116
With the recent rapid progress of higher integration of semiconductor devices, mechano-chemical polishing process is playing a very important role. Along with this trend, cleaning and drying processes after the mechano-chemical process, have been reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5a16c845f5d466e58ad44216f3af22f
https://doi.org/10.1149/09202.0107ecst
https://doi.org/10.1149/09202.0107ecst
Autor:
Shumpei Miura, Takashi Yamada, Tomoatsu Ishibashi, Hisanori Matsuo, Katsuhide Watanabe, Naoki Ono
Publikováno v:
ECS Meeting Abstracts. :2327-2327
As higher integration of semiconductor devices has progressed recently, mechano-chemical polishing process is playing a very important role. At the same time, cleaning and drying technologies after the polishing process have been more and more import
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6addb712af6f57a692641d099066dcbd
https://doi.org/10.1149/ma2019-02/54/2327
https://doi.org/10.1149/ma2019-02/54/2327
Autor:
Jun Kawahara, Hidenori Miyoshi, Hisanori Matsuo, Yuzuru Sonoda, Keizo Kinoshita, Takashi Goto, Syozo Takada, Takenobu Yoshino, Takamaro Kikkawa, Akira Ishikawa, Yutaka Seino, Nobutaka Kunimi, Yoshihiro Hayashi, Akinori Nakano, Tetsuro Ogata
Publikováno v:
Japanese Journal of Applied Physics. 46:4064-4069
A plasma-enhanced co-polymerization technique was developed for low-k/Cu damascene integration on 300 mm wafers. This technique enables us to control dielectric film properties by introducing organo-siloxane and hydrocarbon into a He-plasma. The grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3563c79f6b06c1e4135b06157647d1a6
https://doi.org/10.1143/jjap.46.4064
https://doi.org/10.1143/jjap.46.4064
Autor:
Akira Ishikawa, Koichi Fukaya, Nobuyoshi Kobayashi, Seiichi Kondo, Takamaro Kikkawa, Hisanori Matsuo
Publikováno v:
Microelectronic Engineering. 83:2146-2149
We investigated the relationship between the direction of frictional force vector and the delamination probability in the chemical mechanical polishing (CMP) process of Cu/low-k damascene structures. To obtain the direction of the frictional force ve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9a0cf9bb104dfad4c82baacb24d5188
https://doi.org/10.1016/j.mee.2006.09.024
https://doi.org/10.1016/j.mee.2006.09.024
Autor:
Noboru Mikami, Yoshiaki Oku, Takamaro Kikkawa, Syozo Takada, Kazuhiro Yamada, Nobuhiro Hata, Hirofumi Tanaka, Hidenori Miyoshi, Hisanori Matsuo
Publikováno v:
Japanese Journal of Applied Physics. 43:498-503
To lower the dielectric constant k of interlayer-dielectric films with two-dimensional pore structures while maintaining their mechanical strength, the influences of pore arrangement on the elastic modulus E and k of the films were investigated. It w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a03e17f3b4f833d5b0d7cb778c8c8d5
https://doi.org/10.1143/jjap.43.498
https://doi.org/10.1143/jjap.43.498
Autor:
Hirokuni Hiyama, Takahiro Tajiri, Keisuke Suzuki, Takashi Kushida, Panart Khajornrungruang, Yoshihiro Mochizuki, Hisanori Matsuo, Keiichi Kimura
Publikováno v:
Proceedings of International Conference on Planarization/CMP Technology 2014.
An optical technique based on the optical Fourier transform has been developed to evaluate the characteristics of polishing pad surface topography. The power spectrum from the optical Fourier transform, which correlates with the diffracted light inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b15726833aed2f90ddccc5057c117a5c
https://doi.org/10.1109/icpt.2014.7017281
https://doi.org/10.1109/icpt.2014.7017281
Publikováno v:
Journal of the Japan Society for Precision Engineering. 67:1289-1293
CMP has now been adopted not only for ILD and W-plug, but also for Cu metal and STI. In the STI CMP process, the wafer has some defined waviness, and it has recently been reported that this waviness may affect the STI CMP yield. The principle purpose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a743067ace88f99a8052c325f34f6447
https://doi.org/10.2493/jjspe.67.1289
https://doi.org/10.2493/jjspe.67.1289