Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Hisanori Ihara"'
The observation of plasma induced defect density at a-Si:H interface by quasi-static C-V measurement
Autor:
Hisanori Ihara
Publikováno v:
Journal of Non-Crystalline Solids. 204:164-168
ASi i-p diode with i/i interface in i-a-Si layer is prepared. The upper i-a-Si layer is deposited by the plasma enhanced chemical vapor deposition method. This sample is evaluated by quasi-static capacitance versus voltage measurement. It has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d0bdf4208dbcf9ca6db1d32725e9d4f
https://doi.org/10.1016/s0022-3093(96)00186-x
https://doi.org/10.1016/s0022-3093(96)00186-x
Autor:
Yoshinori Iida, Eiji Oba, A. Furukawa, Hiroyuki Tango, Sohei Manabe, Okio Yoshida, Tetsunori Wada, Hidetoshi Nozaki, Hisanori Ihara
Publikováno v:
Journal of Non-Crystalline Solids. :326-329
Many studies have concentrated on the decrease in a-Si defect density. However, several a-Si image sensors, such as the 2M-pixel charge coupled device (CCD) image sensor, suffer from the following problem: a decrease in defect density causes an incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a88ff76315f9e78008660f5b1d5aa04
https://doi.org/10.1016/0022-3093(96)00157-3
https://doi.org/10.1016/0022-3093(96)00157-3
Autor:
Yoshiyuki Matsunaga, Michio Sasaki, A. Furukawa, Y. Koya, Naoshi Sakuma, Shinji Ohsawa, Hidetoshi Nozaki, Hiroto Honda, Hirofumi Yamashita, Hisanori Ihara, Ryohei Miyagawa, Sohei Manabe
Publikováno v:
IEEE Journal of Solid-State Circuits. 28:1066-1070
A 2/3-in 400-k pixel-stack-CCD (charge coupled device) image sensor that has bias charge injection into the a-Si layer is described. Because the bias charges fill the deep level traps in advance, image sticking is reduced to imperceptible levels 0.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d047a87ba94552eab22a37b7ee8c22
https://doi.org/10.1109/4.245583
https://doi.org/10.1109/4.245583
Autor:
Yoshiyuki Matsunaga, Hirofumi Yamashita, Ryohei Miyagawa, H. Ishiwata, Hisanori Ihara, I. Inoue, H. Miura, Yoshitaka Egawa, Nobuo Nakamura, T. Yamaguchi, Hidetoshi Nozaki
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
We have developed a low voltage buried photodiode for CMOS imager, in order to achieve high quality reproduced images comparable to CCD imager. The new buried photodiode has been operated in complete charge transfer mode at low voltage of 33 V, and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e578060626557292eeea5f511e564f7
https://doi.org/10.1109/iedm.1999.824290
https://doi.org/10.1109/iedm.1999.824290
Autor:
Yoshinori Iida, S.-I. Sano, T. Niiyama, Michio Sasaki, F. Masuoka, Takeo Sakakubo, I. Inoue, Naoshi Sakuma, Hidetoshi Nozaki, Yukio Endo, Shinji Ohsawa, Ryohei Miyagawa, Hironaga Honda, Yoshitaka Egawa, Sohei Manabe, Nobuo Nakamura, I. Yanase, Yoshiyuki Matsunaga, Tetsuya Yamaguchi, Yoshiki Ishizuka, N. Endoh, Hirofumi Yamashita, E. Ohba, Hisanori Ihara, H. Ichinose, A. Furukawa
Publikováno v:
Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.
Shrinking pixel size in conventional CCD imagers degrades device performance. Unsatisfactory smear noise of -90 dB is attained in a 2/3-inch 2M pixel CCD imager. The STACK-CCD imager has a great advantage regarding this problem. A 100% aperture ratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e949a941f2e1ac40805e7b42a82317
https://doi.org/10.1109/isscc.1994.344660
https://doi.org/10.1109/isscc.1994.344660
Publikováno v:
International Technical Digest on Electron Devices.
An Hg-sensitized photochemical vapor deposition method has been developed which has enabled the hydrogenated amorphous silicon photoconversion layer to be overlaid on a CCD (charge coupled device) imaging device, without requiring the pixel separatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecf397287d06c47694925b2d98e013ce
https://doi.org/10.1109/iedm.1990.237176
https://doi.org/10.1109/iedm.1990.237176
Autor:
Yoshinori Iida, Nobuo Nakamura, Eiji Oba, Hisanori Ihara, Tetsuya Yamaguchi, Hidetoshi Nozaki, Keiji Mabuchi
Publikováno v:
SPIE Proceedings.
Shrinkage of pixel structures and layouts for CMOS active pixel image sensors are studied. Reduction of CMOS device design rule with the scaling-law can make the pixel size small, naturally. However, using minimum design rule, quarter micron rule or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1456afbc1ceca7f2205e5e79f19fde0f
https://doi.org/10.1117/12.304558
https://doi.org/10.1117/12.304558
Autor:
Yoshinori Iida, Ikuko Ioue, Hirofumi Yamashita, Hidetoshi Nozaki, Tetsuya Yamaguchi, Hisanori Ihara
Publikováno v:
Solid State Sensor Arrays: Development and Applications.
The color cross-talk simulation analysis was carried out. The color cross-talk was depended on the p-well potential profile. The color cross-talk has a minimum value around 2.3 micrometers junction depth of p-well. The color cross-talk can be improve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1de0cd8e579d9f257de530c4fab3301f
https://doi.org/10.1117/12.275184
https://doi.org/10.1117/12.275184
Publikováno v:
MRS Proceedings. 237
A hydrogenated amorphous silicon (a-Si:H) interface fabrication technology for the plasma CVD method, which can produce low interface defect density, is presented. The relation between the interface defect density and radio frequency (RF) power was i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::233ab19108b9d9a42dc7daecf20fcff9
https://doi.org/10.1557/proc-237-637
https://doi.org/10.1557/proc-237-637
Autor:
Yoshiki Ishizuka, Yoshinori Iida, Michio Sasaki, Naoshi Sakuma, Hisanori Ihara, Hidetoshi Nozaki, Sohei Manabe, Takako Niiyama, Hideo Ichinose
Publikováno v:
Japanese Journal of Applied Physics. 34:2223
An Hg-sensitized photochemical vapor deposition method has been developed which has enabled a hydrogenated amorphous silicon photoconversion layer to be overlaid on a charge coupled device (CCD) imager, without a pixel separation structure. This chem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d21dac4b193c24b13e4127cff401198
https://doi.org/10.1143/jjap.34.2223
https://doi.org/10.1143/jjap.34.2223