Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Hisanao Akima"'
Publikováno v:
Science and Technology of Advanced Materials, Vol 18, Iss 1, Pp 294-306 (2017)
The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films
Externí odkaz:
https://doaj.org/article/b71964f8c6fe4bf6b824e1073df6ec8c
Publikováno v:
IEICE Transactions on Information and Systems. :396-405
Publikováno v:
IEICE Transactions on Information and Systems. :237-245
Publikováno v:
Materials Science in Semiconductor Processing. 70:55-62
By using our low-energy Ar plasma enhanced chemical vapor deposition (CVD) at a substrate temperature below 100 °C during plasma exposure without substrate heating, modulation of valence band structures and infrared photoluminescence can be observed
Publikováno v:
Materials Science in Semiconductor Processing. 70:188-192
Epitaxial growth of Si-C alloy films on Si(100) were achieved in the C fraction range up to about 5 at% by surface reaction of SiH 4 and CH 4 under low-energy Ar plasma irradiation without substrate heating in electron-cyclotron-resonance (ECR) plasm
Publikováno v:
Materials Science in Semiconductor Processing. 70:50-54
In-situ B doping in epitaxial and amorphous Si films was investigated by low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD) by using SiH4 and B2H6 without substrate heating. For a B-doped epitaxial Si film, high c
Publikováno v:
IEICE Transactions on Information and Systems. :2683-2689
Autor:
Hisanao Akima, Shigeo Sato, Ayumi Hirano-Iwata, Shigeru Kubota, Satoshi Moriya, Hideaki Yamamoto
Publikováno v:
Chaos (Woodbury, N.Y.). 29(1)
We considered a modular network with a binomial degree distribution and related the analytical relationships of the network properties (modularity, average clustering coefficient, and small-worldness) with structural parameters that define the networ
Publikováno v:
IEICE Transactions on Electronics. :1056-1064
Publikováno v:
ECS Transactions. 69:35-38
1. Introduction Developments of nano-scale quantum device have been expected to open new approaches for information-processing. Among the various quantum devices proposed so far, a solid state qubit is one of the potential candidate devices to bring