Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hirozo Takano"'
Publikováno v:
Journal of Crystal Growth. 133:123-131
Carrier impurities accumulated at the interface of a molecular beam epitaxial (MBE) grown GaAs layer-substrate have been studied in connection with substrate surface preparation just prior to MBE growth. Although the accumulated impurity density of s
Autor:
M. Sakai, Hirozo Takano, S. Matsue, T. Oku, K. Nishitani, K. Sumitani, H. Makino, H. Nakano, M. Noda
Publikováno v:
12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).
A fully functional GaAs 16 K SRAM is realized with an address access time of 4.4 ns and a power dissipation of 2 W. In the fabrication process, a triple-level Au-based interconnection technology is developed to reduce the wiring length, which strongl
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III.
The multiple exposure technique in electron beam (EB) lithography has been studied from standpoints of resist sensitivity, contrast, dissolution rate, linewidth and edge roughness delineating 0.1 micrometers pattern on the resist. The increase of the
Publikováno v:
MRS Proceedings. 281
The degradation mechanism of the Schottky contact of Al/Ti/n-GaAs and Al/Pt/Ti/n-GaAs under the heat treatment of 300°C has been investigated. Barrier height of the Al/Ti/n-GaAs Schottky contact degrades drastically after the heat treatment, in whic
Publikováno v:
MRS Proceedings. 209
The degradation mechanism of a-SiN:H films under current injection is investigated. It is shown that the degradation of a-SiN:H films is closely related to the hole trapping into Si-Si, Si-H, and Si0 defects. It is presumably concluded that the hole
Autor:
Hirozo Takano
Publikováno v:
Microelectronics Reliability. 29:iv
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