Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Hiroyuki Takashino"'
Autor:
H. Ishida, Yasuo Inoue, Hiroyuki Takashino, M. Taya, K. Ishikawa, Motoaki Tanizawa, Takeshi Okagaki, T. Hayashi
Publikováno v:
IEEE Transactions on Electron Devices. 59:3199-3204
In this paper, we propose a comprehensive model to express nMOSFET threshold voltage shift induced by stress, ranging from a high tensile one to a high compressive one. Using this model, the quantum confinement effect, combined with large out-of-plan
Autor:
Takeshi Okagaki, O. Tsuchiya, Eiji Tsukuda, Hiroyuki Takashino, K. Ishikawa, Katsumi Eikyu, Y. Inoue, T. Hayashi, Shoji Wakahara, Motoaki Tanizawa, T. Uchida
Publikováno v:
IEEE Transactions on Electron Devices. 55:2632-2640
In this paper, we propose a new analytical electron mobility model in strained Si inversion layers suitable for implementation in a drift-diffusion simulator. Using our new model, a numerical study in conjunction with comprehensive bending experiment
Autor:
Masashi Kitazawa, Yasuo Inoue, Masahide Inuishi, Tomohiro Yamashita, Hiroyuki Takashino, Takashi Kuroi, Yoji Kawasaki
Publikováno v:
Japanese Journal of Applied Physics. 41:2399-2403
The advantage of forming a retrograde well using a high-energy parallel beam has been experimentally clarified for the first time. A conventional batch-type implanter requires tilted implantation to suppress the spatial variation in a wafer. Tilted i
Publikováno v:
Modern Physics Letters A. 13:1063-1069
We examine some properties of supermultiplet consisting of the U(1)_{J} current, extended supercurrents, energy-momentum tensor and the central charge in N=2 supersymmetric Yang-Mills theory. The superconformal improvement requires adding another sup
Autor:
H. Itoyama, Hiroyuki Takashino
Publikováno v:
Progress of Theoretical Physics. 97:963-1001
We study our Schwinger-Dyson equation as well as the large $N_{c}$ loop equation for supersymmetric Yang-Mills theory in four dimensions by the N=1 superspace Wilson-loop variable. We are successful in deriving a new manifestly supersymmetric form in
Autor:
Koji Shibutani, Takeshi Okagaki, Miho Yokota, M. Fujii, Atsushi Tsuda, Takumi Hasegawa, Yoshinori Deguchi, Kazunori Onozawa, Hiroyuki Takashino
Publikováno v:
2013 IEEE International Conference on Microelectronic Test Structures (ICMTS).
We discuss characteristics variance in detail, caused by probing stress in 28 nm High-K and Metal Gate process. The Vth variation of nch large size transistor increases by 20% comparing with weak probing pressure (≃ 0). Regarding small size transis
Autor:
Hiroyuki Takashino, Takahiro Kubota
Publikováno v:
Progress of Theoretical Physics. 94:637-648
The idea of the effective topological theory for high-energy scattering proposed by H. and E. Verlinde is applied to the $(2+1)$ dimensional gravity with Einstein action plus Chern-Simons terms. The calculational steps in the topological description
Autor:
T. Uchida, Kenji Taniguchi, Eiji Tsukuda, Yoshinari Kamakura, T. Hayashi, Katsumi Eikyu, Takeshi Okagaki, O. Tsuchiya, Motoaki Tanizawa, Hiroyuki Takashino, K. Ishikawa, Yasuo Inoue, Shoji Wakahara
Publikováno v:
Simulation of Semiconductor Processes and Devices 2007 ISBN: 9783211728604
We have developed a system consisting of a full-3D process simulator for stress calculation and k · p band calculation that takes into account the subband structure. Our simulations are in good agreement with the experimental data of strained Si-pMO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa3ba9c87ad7c7031abb8f969cd461c4
https://doi.org/10.1007/978-3-211-72861-1_7
https://doi.org/10.1007/978-3-211-72861-1_7
Autor:
O. Tsuchiya, Takeshi Okagaki, Katsumi Eikyu, Yasuo Inoue, Shoji Wakahara, T. Uchida, Eiji Tsukuda, Motoaki Tanizawa, K. Ishikawa, T. Hayashi, Hiroyuki Takashino
Publikováno v:
Simulation of Semiconductor Processes and Devices 2007 ISBN: 9783211728604
Numerical study in conjunction with comprehensive bending experiments has demonstrated that (100)-Si has the optimum channel direction along in terms of the device performance of strained 65nm-node nMOSFETs with Contact Etch Stop Layer (CESL), and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c92197effb4b3f4826aec70e5a2c422a
https://doi.org/10.1007/978-3-211-72861-1_25
https://doi.org/10.1007/978-3-211-72861-1_25
Autor:
T. Eimori, Takeshi Okagaki, T. Uchida, K. Ishikawa, Y. Ohji, Hiroyuki Takashino, Motoaki Tanizawa
Publikováno v:
2005 International Conference On Simulation of Semiconductor Processes and Devices.