Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Hiroyuki Sazawa"'
Autor:
Takeshi Aoki, Noboru Fukuhara, Takenori Osada, Hiroyuki Sazawa, Masahiko Hata, Takayuki Inoue
Publikováno v:
AIP Advances, Vol 5, Iss 8, Pp 087149-087149-14 (2015)
This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer p
Externí odkaz:
https://doaj.org/article/a0fb5547d0584824b327835b70c42ec1
Publikováno v:
Journal of Electronic Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::561eead4bffc67968ee646380edff789
https://doi.org/10.1007/s11664-023-10336-7
https://doi.org/10.1007/s11664-023-10336-7
Autor:
Hirotaka Yamaguchi, Hiroyuki Sazawa
Publikováno v:
Applied Physics Letters. 120:212102
We epitaxially grew a single-domain 3C layer on a step-controlled C-face 4H-SiC substrate to create a 3C/4H-SiC heterostructure. The effectiveness of using such a substrate to grow a thin highly crystalline single-domain 3C layer was demonstrated. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbf97ba662038008a67d4eefc6297d5b
https://doi.org/10.1063/5.0090083
https://doi.org/10.1063/5.0090083
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ce9ed86641baa3869bf14b704a9e025
https://doi.org/10.7567/ssdm.2020.k-10-03
https://doi.org/10.7567/ssdm.2020.k-10-03
Autor:
Hiroyuki Sazawa, M. Kosaki, Tomohisa Kato, K. Furuta, M. Kinoshita, Takeshi Mitani, Kazutoshi Kojima, Hajime Okumura, Shin-ichi Nakashima, Koji Hirata
Publikováno v:
Materials Science Forum. :1043-1046
AlGaN/GaN HFETs were fabricated around micropipes and on a domain boundary in a semi-insulating silicon carbide (SI-SiC) substrate and the DC characteristics of the fabricated devices were measured. Devices around micropipe showed no pinch-off or lar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f978ee3d55e21763aa2a0e7a53079f44
https://doi.org/10.4028/www.scientific.net/msf.556-557.1043
https://doi.org/10.4028/www.scientific.net/msf.556-557.1043
Autor:
Mitsuaki Shimizu, Hiroyuki Sazawa, Akimasa Kinoshita, Naoki Shibata, Yasuhito Tanaka, Hajime Okumura, K. Furuta, Shuichi Yagi, Koji Hirata, Masayoshi Kosaki
Publikováno v:
physica status solidi c. 4:2748-2751
Metal-insulator-semiconductor (MIS) heterostructure field-effect transistors (HFETs) fabricated with HfAlO as a gate insulator with high dielectric permittivity are demonstrated to achieve true enhancement-mode operation with no gate leakage and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ec6217fdbedcc0b12d2b6d3dd7d91fd
https://doi.org/10.1002/pssc.200674920
https://doi.org/10.1002/pssc.200674920
Autor:
Masayoshi Kosaki, K. Furuta, Hajime Okumura, Hiroyuki Sazawa, Shin-ichi Nakashima, Koji Hirata, H. Bang, T. Tsuchiya, K. Hikosaka, Takeshi Mitani
Publikováno v:
physica status solidi c. 3:2321-2324
To clarify the effect of micropipes in SiC substrates on AlGaN/GaN HEMT performance, we fabricated HEMTs, with precise positioning, on and around hollow core at the end of micropipes in the SiC substrate with an overgrown AlGaN/GaN epitaxial layer an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe3369537ff5dcc45a63bc997a27a0e3
https://doi.org/10.1002/pssc.200565459
https://doi.org/10.1002/pssc.200565459
Autor:
Katsuhiro Akimoto, M. Hata, Yoshiaki Honda, Hiroyuki Sazawa, Naohiro Ichihara Nishikawa, Hajime Okumura, Shuichi Yagi, Takeaki Sakurai, M. Shimizu
Publikováno v:
physica status solidi c. 5:1986-1988
We report on metal-insulator-semiconductor (MIS) heterostructure field-effect transistor (HFET) with AlOx gate insulator formed by metal-organic chemical vapor deposition (MOCVD) method designed for achieving low gate leak and less current collapse.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::288041b05e0f8b2678623491a73a05a6
https://doi.org/10.1002/pssc.200778652
https://doi.org/10.1002/pssc.200778652
Autor:
Kenichi Yagi, Hirotsugu Minami, Mari Wakabayashi, Masao Sugawara, Shinji Yoshiyagawa, Hitoshi Sato, Soo Beng Khoo, Kazunori Odashima, Hiroyuki Sazawa, Madoka Namba, Yoshio Umezawa
Publikováno v:
Analytical Sciences. 10:343-347
Channel mimetic sensing membranes, which display a chemical sensing function based on analyte-induced changes in the permeability through ordered membranes, give a promising approach to the development of a novel class of chemical sensors. Results of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59c4d450d0669ec1c30f2ea737f70035
https://doi.org/10.2116/analsci.10.343
https://doi.org/10.2116/analsci.10.343
Publikováno v:
Langmuir. 8:609-612
The effect of the membrane surface charge on the host-quest complexation of valinomycin molecules with K[sup +] ions in synthetic lipid monolayers was studied by measuring surface pressure-molecular area isotherms. It was found that the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa81fc9689387148e649cf281137c92e
https://doi.org/10.1021/la00038a051
https://doi.org/10.1021/la00038a051