Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Hiroyuki Masato"'
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 122:23-28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4c6fe4352d414a6348c42a48b89f7ed
https://doi.org/10.1541/ieejeiss1987.122.1_23
https://doi.org/10.1541/ieejeiss1987.122.1_23
Publikováno v:
Journal of the Society of Materials Science, Japan. 50:376-379
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76ca156f37af042008786150254fe2cc
https://doi.org/10.2472/jsms.50.376
https://doi.org/10.2472/jsms.50.376
Autor:
Mitsuru Nishitsuji, Masato Takata, Katsuhiko Kawashima, Kazuhisa Fujimoto, Osamu Ishikawa, Yoshiharu Kudo, Hiroyuki Masato
Publikováno v:
Solid-State Electronics. 43:1413-1417
A low power dissipation and broadband transimpedance amplifier IC has been developed for sub-carrier multiplexing (SCM) optical communication systems such as a multi-channel video signal transmission system. A 0.25 μm pseudomorphic double-heterojunc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1481cb1e78a7ff5d4f861f01a071494
https://doi.org/10.1016/s0038-1101(99)00082-9
https://doi.org/10.1016/s0038-1101(99)00082-9
Autor:
Yorito Ota, Hiroyuki Masato, Mitsuru Nishitsuji, Takahiro Yokoyama, Shinji Yamamoto, Manabu Yanagihara, Inoue Kaoru
Publikováno v:
Solid-State Electronics. 41:1675-1679
A new power HBT and HFET were developed for low unity supply voltage operation in PHS handsets. The emitter region, the emitter electrode, the buried collector and the base electrodes in the power HBT are formed using the emitter electrode self-align
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f3c31a407afca53f91a7b3f7a535ff
https://doi.org/10.1016/s0038-1101(97)00122-6
https://doi.org/10.1016/s0038-1101(97)00122-6
Publikováno v:
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af98b17cb1dd018904246cecc8b6af80
https://doi.org/10.7567/ssdm.1993.pd-2-5
https://doi.org/10.7567/ssdm.1993.pd-2-5
Publikováno v:
Extended Abstracts of the 1990 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b51a8f996722ba9c17b59ee049d59b73
https://doi.org/10.7567/ssdm.1990.d-6-6
https://doi.org/10.7567/ssdm.1990.d-6-6
Autor:
Yorito Ota, Kenichi Inoue, M. Yanagihara, Hiromasa Fujimoto, Hiroyasu Takehara, Hiroyuki Masato, C. Adachi
Publikováno v:
Electronics Letters. 30:906
The high power properties of heterojunction FETs (H-FET) have been investigated. The H-FETs are fabricated by using a strained AlGaAs/GaInAs/GaAs/AlGaAs selectively-doped double heterojunction structure. As compared with GaAs MESFETs, the H-FETs show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cad1b2d5018a90dd4f82ac1ae3a9a9d
https://doi.org/10.1049/el:19940571
https://doi.org/10.1049/el:19940571
Publikováno v:
Japanese Journal of Applied Physics. 30:3850
We report on the lattice-mismatched growth and electrical properties of In0.5Ga0.5As/InAlAs modulation-doped heterostructures on GaAs substrates by molecular beam epitaxy using a wide-gap InAlAs graded buffer layer and low-temperature Molecular Beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9636a87f5c27c7a0823672bf526b7153
https://doi.org/10.1143/jjap.30.3850
https://doi.org/10.1143/jjap.30.3850
Publikováno v:
Japanese Journal of Applied Physics. 29:L2420
Photopumped blue laser oscillation was achieved up to near room temperature (280 K) in a ZnS0.18Se0.82/ZnSe multilayer structure grown by MOVPE. This significant improvement in the lasing temperature is attributed to the higher heterobarrier which pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc1c33797b7f8234b50d2737660f3c69
https://doi.org/10.1143/jjap.29.l2420
https://doi.org/10.1143/jjap.29.l2420
Publikováno v:
Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc918a9959e7a129477e1ffd7abcb0ad
https://doi.org/10.7567/ssdm.1988.d-9-4
https://doi.org/10.7567/ssdm.1988.d-9-4