Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Hiroyuki Iechi"'
Autor:
Toki Nanto, Kazumasa Sugiyama, Tsuguo Fukuda, Kazuyuki Tadatomo, Yuji Shiraishi, Takashi Fujii, Hiroyuki Iechi, Rayko Simura
Publikováno v:
Journal of Crystal Growth. 574:126286
Single crystal growth of ScAlMgO4 boules with 10 mm up to 4 in. (c.a. 101.6 mm) in diameter by Czochralski technique was demonstrated. Some high quality ScAlMgO4 single crystal boules with 2-inches (c.a. 50.8 mm) in diameter were successfully grown w
Recent Progress in Evaluation Techniques and Device Applications of Organic and Composite Thin Films
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 130:129-135
Publikováno v:
IEICE Transactions on Electronics. :1843-1847
We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and diel
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 128:213-219
Publikováno v:
Japanese Journal of Applied Physics. 46:2645-2649
We report two types of integrated circuits based on a pentacene static-induction transistor (SIT), a pentacene thin-film transistor (TFT) and a zinc oxide (ZnO) TFT. The operating characteristics of a p-p inverter using pentacene SITs and a complemen
Publikováno v:
Japanese Journal of Applied Physics. 46:2717-2721
For the realization of high-performance organic static induction transistors (OSITs), it is important to investigate the effect of a hole injection barrier at the interface between a pentacene films and a source electrode in OSITs. In this study, the
Publikováno v:
Japanese Journal of Applied Physics. 45:3698-3703
Conventional organic static induction transistors (OSITs) have been directly fabricated on a source electrode formed on a substrate without the investigation of the effect of a surface treatment on device characteristics. We have fabricated the OSITs
Publikováno v:
Electrical Engineering in Japan. 158:49-55
We propose a double heterojunction organic light-emitting diode (OLED) using a zinc oxide (ZnO) film, which works as a transparent and electron injection layer. The crystal structure of the ZnO films as a function of Ar/O2 flow ratio and the basic ch
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 124:1207-1212
We propose a double heterojunction type organic light emitting diodes (OLED) using zinc oxide (ZnO) films, which works as a transparent and electron injection layer. The crystal structure of the ZnO films as a function of Ar/O2 flow ratio and the bas
Autor:
Kazuhiro Kudo, Hiroyuki Iechi
PROBLEM TO BE SOLVED: To provide a vertical type organic transistor at a low cost wherein high operational speed and high power are realized and mass production is enabled with superior reproducibility. SOLUTION: In the vertical type organic transist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::682555b139e4b99d494ebc37dc87a26a
https://doi.org/10.1201/9781420072914-17
https://doi.org/10.1201/9781420072914-17