Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Hiroyuki Handa"'
Autor:
Shuichi Nagai, Yasuhiro Yamada, Noboru Negoro, Hiroyuki Handa, Miori Hiraiwa, Nobuyuki Otsuka, Daisuke Ueda
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 1, Pp 7-14 (2015)
This paper describes an ultracompact GaN 3 × 3 matrix power converter with drive-by-microwave (DBM) technology, which comprises a radio frequency (RF)-triggered GaN-gate injection transistor (GIT) bidirectional power switches integration chip with c
Externí odkaz:
https://doaj.org/article/84559a6252e940eebff3fbbfe18cd13c
Publikováno v:
Japanese Journal of Benthology. 75:29-34
Publikováno v:
IEEE Transactions on Power Electronics. 34:10887-10897
The development and application of gallium nitride–heterojunction field-effect transistor (GaN–HFET) has been actively researched. Because GaN–HFETs have advantages in high-frequency operation, it is possible to downsize power converters by inc
Publikováno v:
Japanese Journal of Benthology. 73:102-108
Publikováno v:
Journal of the Japan Institute of Power Electronics. 43:73-80
Publikováno v:
2018 IEEE Energy Conversion Congress and Exposition (ECCE).
In this paper, we discuss the method of reducing peak voltage between drain and source, it is occurred during the start of the class Phi-2 inverter. The class Phi-2 inverter is resonance inverter circuit with only one switching device, it is able to
Publikováno v:
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia).
In recent years, the development and application of GaN-HFET(Heterojunction Field Effect Transistor) has become actively. As GaN-HFETs have advantages in high frequency operation, it is possible to down size power converters by rising switching frequ
Autor:
Masahiro Ogawa, Tsuguyasu Hatsuda, Ryo Kajitani, Satoshi Tamura, Kenichiro Tanaka, Daisuke Shibata, Nanako Shiozaki, Hiroyuki Handa, Tetsuzo Ueda, Shinji Ujita, Masahiro Ishida
Publikováno v:
Gallium Nitride Materials and Devices XIII.
We propose a normally-off vertical GaN-based transistor on a bulk GaN substrate with low specific on-state resistance of 1.0 mΩ·cm2 and high off-state breakdown voltage of 1.7 kV. P-GaN/AlGaN/GaN triple layers are epitaxially regrown over V-shaped
Autor:
Shuichi Nagai, Hiroaki Ueno, Kenji Mizutani, Tetsuzo Ueda, Yasuhiro Yamada, Masahiro Ishida, Yuji Kudoh, Noboru Negoro, Yasufumi Kawai, Nobuyuki Otsuka, Daisuke Ueda, Hiroyuki Handa, Miori Hiraiwa
Publikováno v:
ECS Transactions. 64:41-49
In this paper, we describe compact isolated gated drivers with Drive-by-Microwave (DBM) technology, which can provide isolated gate signal and power all together by a microwave wireless power transmission. The fabricated GaN gate driver successfully
Autor:
Satoshi Tamura, Nanako Shiozaki, Tetsuzo Ueda, Tsuguyasu Hatsuda, Kenichiro Tanaka, Ryo Kajitani, Masahiro Ogawa, Shinji Ujita, Hiroyuki Handa, Hidekazu Umeda, Masahiro Ishida, Daisuke Shibata
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
GaN-based normally-off Gate Injection Transistors (GITs) with p-type gate over AlGaN/GaN heterojunction are fabricated on bulk GaN substrates. Thickness of insulating GaN buffer layer is increased up to 16 μm for the presented device from 5 μm for