Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Hiroyuki Gohda"'
Autor:
Akihiko Fujiwara, Yasuyuki Sugawara, Yoshihiro Kubozono, Ritsuko Eguchi, Shohei Oikawa, Yumiko Kaji, Keiko Ogawa, Hiroyuki Gohda
Publikováno v:
Applied Physics Letters. 98:013303
Field-effect transistors (FETs) with solid gate dielectrics are fabricated with thin films of the one-dimensional (1D) extended hydrocarbon [7]phenacene, which contains seven benzene rings. p-channel FET characteristics are observed for these FETs, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e339123921d23629c03feebccd6528c
https://doi.org/10.1063/1.3540648
https://doi.org/10.1063/1.3540648
