Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Hiroyuki Fukumizu"'
Autor:
Noboru Hiwasa, Junji Kataoka, Norikatsu Sasao, Shuichi Kuboi, Daiki Iino, Kazuaki Kurihara, Hiroyuki Fukumizu
Publikováno v:
Applied Physics Express. 15:106002
In the dry etching process using fluorocarbon (FC) gas, deposited amorphous-CF x (a-CF x ) films in patterns, such as holes and trenches, strongly affect the etching performance. The influence of the FC gas molecular structures and their atomic compo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3c31acd274f4ef536836fe322a9e91e
https://doi.org/10.35848/1882-0786/ac8d46
https://doi.org/10.35848/1882-0786/ac8d46
Autor:
Haruka Suzuki, Manh Hung Chu, Kazuaki Kurihara, Daiki Iino, Makoto Moriyama, Hirotaka Toyoda, Naoya Nakahara, Keita Ichikawa, Hiroyuki Fukumizu
Publikováno v:
Applied Physics Express. 14:126001
Angular distributions of high energy neutrals and ions, impinging on a RF-biased electrode in a 13.56 MHz capacitively-coupled argon plasma were investigated. Ions and neutrals were introduced into a drift chamber that was directly connected to the R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0f66d2a199260aa8f36f31fb7dafd4
https://doi.org/10.35848/1882-0786/ac33c4
https://doi.org/10.35848/1882-0786/ac33c4
Autor:
Hiroyuki Fukumizu, Hisataka Hayashi, Daiki Iino, Rei Tanaka, Itsuko Sakai, Hiroaki Kakiuchi, Kiyoshi Yasutake, Satoshi Tanida, Kazuaki Kurihara, Tomoyuki Tanaka, Hiromasa Ohmi, Jou Kikura, Junko Abe, Jota Fukuhara
Publikováno v:
Japanese Journal of Applied Physics. 60:050904
C2F4 is a potential etching gas for high aspect ratio etching of SiO2 films owing to its high etch rate. However, it is difficult to fill C2F4 to a gas cylinder with high pressure for mass production due to its high reactivity. To overcome this probl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01d059d8791a2497bd891b50dc2a5cbc
https://doi.org/10.35848/1347-4065/abf9e3
https://doi.org/10.35848/1347-4065/abf9e3
Autor:
Hiroyuki Fukumizu, Daiki Iino, Hisataka Hayashi, Itsuko Sakai, Jota Fukuhara, Hiroaki Kakiuchi, Hiromasa Ohmi, Jou Kikura, Tomoyuki Tanaka, Rei Tanaka, Kiyoshi Yasutake, Kazuaki Kurihara, Junko Abe
Publikováno v:
Chemical Engineering Science. 229:116125
On-site C2F4 gas production from CF4 feedstock gas was achieved using pure CF4 plasma at a moderate pressure (40–200 Torr) and a relatively low gas temperature. The decomposition of CF4 and the generation of perfluorocarbon gases with a larger numb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::440155fde72e570951452512da8660ac
https://doi.org/10.1016/j.ces.2020.116125
https://doi.org/10.1016/j.ces.2020.116125
Autor:
Hiroyuki Fukumizu, Hirotaka Toyoda, Makoto Moriyama, Haruka Suzuki, Daiki Iino, Naoya Nakahara, Kazuaki Kurihara
Publikováno v:
Japanese Journal of Applied Physics. 60:016001
Charging and discharging behavior of high aspect-ratio (AR) hole capillary plate (CP) exposed to a pulse-modulated very high frequency (VHF) capacitively-coupled plasma is investigated. From an equivalent circuit model, time-dependent charge density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f6a120782832f47c52c730dbcd2a542
https://doi.org/10.35848/1347-4065/abd0ca
https://doi.org/10.35848/1347-4065/abd0ca
Autor:
Hirotaka Toyoda, Hiroyuki Fukumizu, Makoto Moriyama, Naoya Nakahara, Haruka Suzuki, Kazuaki Kurihara, Akihiro Mitsuya, Daiki Iino
Publikováno v:
Japanese Journal of Applied Physics. 59:SJJB03
Absolute values of the surface charge densities at the top and bottom of a capillary plate (CP) placed on a powered electrode were evaluated under the influence of pulse-modulated very high frequency (40 MHz) plasma. The peak-to-peak voltage at the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f91ad338e13e6f076ea319235a0cdf36
https://doi.org/10.35848/1347-4065/ab85af
https://doi.org/10.35848/1347-4065/ab85af
Publikováno v:
Japanese Journal of Applied Physics. 59:016504
The initial stage of Al2O3 films deposited by atomic layer deposition (ALD) on a H-terminated Si(001) wafer was investigated with in situ X-ray photoelectron spectroscopy (XPS). At deposition temperatures of 250 °C and 300 °C, no Al peak was detect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dea4ac11b6820f640acf0c87b27f5719
https://doi.org/10.7567/1347-4065/ab6273
https://doi.org/10.7567/1347-4065/ab6273
Publikováno v:
Journal of Vacuum Science & Technology A. 37:021002
The atomic layer etching (ALE) characteristics of AlGaN using Cl2 plasma in the modification step and Ar plasma in the removal step were investigated in comparison with conventional reactive ion etching (RIE). Although surface roughening and GaN comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a29649eb22a135d4df7606e6c17d15b
https://doi.org/10.1116/1.5063795
https://doi.org/10.1116/1.5063795
Publikováno v:
Surface Science. 441:542-548
Tunneling barrier height (BH) has been measured at two types of surface defects on Si(001), the type-C defect and the split-off-dimer defect. Contrary to previous experiments, we find no evidence of large BH reduction at these defect sites. For both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b56c6a71f4ba5f8865aa98d882761107
https://doi.org/10.1016/s0039-6028(99)00898-5
https://doi.org/10.1016/s0039-6028(99)00898-5
Publikováno v:
Japanese Journal of Applied Physics. 37:3785
We have carried out barrier-height imaging on clean Si(001) 2 ×1 and Ni-contaminated 2 ×n surfaces and investigated the local barrier-height variation at and around Ni-related dimer-vacancy (DV) defects which are referred to as (1+2)-DVs. The barri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3cc7880076b5a2189084d4fa7ef0184
https://doi.org/10.1143/jjap.37.3785
https://doi.org/10.1143/jjap.37.3785