Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hiroyoshi Imadate"'
Publikováno v:
Materials Science in Semiconductor Processing. 70:92-98
In this study, we used scanning internal photoemission microscopy (SIPM) to investigate damage on the n-GaN surface, which were induced by inductive coupled plasma (ICP) etching in conjunction with a recovery process by annealing. We formed Pd Schott
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3de1754482d6e870d1b5151a7cdc7f2c
https://doi.org/10.1016/j.mssp.2016.10.027
https://doi.org/10.1016/j.mssp.2016.10.027
Autor:
Takashi Egawa, Hiroyoshi Imadate, Kenji Shiojima, Koh Matsumoto, Yuya Yamaoka, Hiroaki Konishi
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
We have demonstrated the use of scanning internal photoemission microscopy (SIPM) to characterize crystal defects in an AlGaN/GaN heterostructure grown on Si substrates. SIPM enabled the visualization of unusually grown regions owing to cracking of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4be1d7476148e2b25a556ccf231cb3a4
https://doi.org/10.7567/ssdm.2017.ps-6-13
https://doi.org/10.7567/ssdm.2017.ps-6-13
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
We report the electrical characteristics of Schottky contacts with nine different metals (Ag, Ti, Cr, W, Mo, Au, Pd, Ni, and Pt) formed on clean m-plane surfaces by cleaving freestanding GaN substrates, compared with these of contacts on Ga-polar c-p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8afda2cf4df801c6173c718da29babb3
https://doi.org/10.7567/ssdm.2017.ps-6-04
https://doi.org/10.7567/ssdm.2017.ps-6-04
Publikováno v:
Japanese Journal of Applied Physics. 57:04FG13
We report the electrical characteristics of Schottky contacts with nine different metals (Ag, Ti, Cr, W, Mo, Au, Pd, Ni, and Pt) formed on clean m-plane surfaces by cleaving freestanding GaN substrates, compared with these of contacts on Ga-polar c-p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7da88ed9e613a41079f6a25d33c84d6f
https://doi.org/10.7567/jjap.57.04fg13
https://doi.org/10.7567/jjap.57.04fg13
Publikováno v:
Japanese Journal of Applied Physics; Apr2018, Vol. 57 Issue 4S, p1-1, 1p
Autor:
Kenji Shiojima, Hiroaki Konishi, Hiroyoshi Imadate, Yuya Yamaoka, Kou Matsumoto, Takashi Egawa
Publikováno v:
Japanese Journal of Applied Physics; Apr2018, Vol. 57 Issue 4S, p1-1, 1p