Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hiroyasu Kitajima"'
Publikováno v:
Japanese Journal of Applied Physics. 34:4747
A new approach to low-temperature growth of Si oxide was discussed in which SiOx was first vacuum-evaporated on Si substrate and then treated in a magnetically excited oxygen plasma (helicon wave) at room temperature. Fairly thick oxide film was obta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb79e28d4d21a21c855bbaa12751c221
https://doi.org/10.1143/jjap.34.4747
https://doi.org/10.1143/jjap.34.4747
Publikováno v:
Japanese Journal of Applied Physics. 34:L955
Good electrical quality Si oxynitride was successfully grown at room temperature using magnetically excited ( N2 + Ar) plasma. Si oxynitride, probably Si\SubtN\SubtO, was grown only when Ar was mixed with N2, while SiO\Subt was solely formed with N2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5d069cf262e4c816abd68b263b28644
https://doi.org/10.1143/jjap.34.l955
https://doi.org/10.1143/jjap.34.l955
Autor:
Daisuke Kitayama, Daisuke Kitayama, Hideaki Nagasawa, Hideaki Nagasawa, Hiroyasu Kitajima, Hiroyasu Kitajima, Yoshinaga Okamoto, Yoshinaga Okamoto, Hideaki Ikoma, Hideaki Ikoma
Publikováno v:
Japanese Journal of Applied Physics; September 1995, Vol. 34 Issue: 9 p4747-4747, 1p
Autor:
Hideaki Nagasawa, Hideaki Nagasawa, Hiroyasu Kitajima, Hiroyasu Kitajima, Daisuke Kitayama, Daisuke Kitayama, Yoshinaga Okamoto, Yoshinaga Okamoto, Hideaki Ikoma, Hideaki Ikoma
Publikováno v:
Japanese Journal of Applied Physics; September 1995, Vol. 34 Issue: 9 pL1103-L1103, 1p