Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hiroyasu Hagino"'
Autor:
Toyotsugu Enokida, Taizoh Sadoh, Masahiko Nakamae, Masanobu Miyao, Masaharu Ninomiya, Ryo Matsuura, Hiroyasu Hagino
Publikováno v:
Materials Science in Semiconductor Processing. 8:167-170
Enhancement effects of H+ implantation on stress relaxation of c-Si1−xGex layers on SiO2 during oxidation-induced Ge condensation process have been investigated. Stress relaxation of c-Si1−xGex layers during oxidation (1100 °C) was significantly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84f7c35281e4a47128e30d87a96ac0cd
https://doi.org/10.1016/j.mssp.2004.09.043
https://doi.org/10.1016/j.mssp.2004.09.043
Publikováno v:
Electrical Engineering in Japan. 124:37-46
We propose a new IGBT structure with a new N+ buffer, and confirm by experiments and numerical simulations that the new IGBT is superior to the conventional one. The following results were obtained. (1) According to our experiments, the new IGBT was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04660b74ad5cb3d7e787c31c03bb1564
https://doi.org/10.1002/(sici)1520-6416(199809)124:4<37::aid-eej5>3.0.co
https://doi.org/10.1002/(sici)1520-6416(199809)124:4<37::aid-eej5>3.0.co
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 117:732-740
We propose a new IGBT structure with a new N+ buffer, and confirm by experiments and numerical simulations that the new IGBT is superior to the conventional one. The following results were obtained. (1) According to our experiments, the new IGBT was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e8b2abe03cf80a0e6c2ad9e5fd9bb6
https://doi.org/10.1541/ieejeiss1987.117.6_732
https://doi.org/10.1541/ieejeiss1987.117.6_732
Publikováno v:
Japanese Journal of Applied Physics. 43:L1517-L1519
The hollow voids formed at the SiC/Si interface during growth of SiC film can be free by pyramiding the Si substrate. The surface of the Si substrate was etched to tetragonal pyramids with an interval of 2 µm before the growth of the SiC film. The S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d05e0af7b34196332ebde4c50f8e8b9e
https://doi.org/10.1143/jjap.43.l1517
https://doi.org/10.1143/jjap.43.l1517
Publikováno v:
Electrical Engineering in Japan. 115:95-108
It is important to remove the transitional peak current in sense-emitter current which is due to dynamic current-sharing during turn-on for a design of IGBTs with current-sense used protection against overcurrent and short circuit. But this analysis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a33d0060262c6fffe45079dc35dba5d
https://doi.org/10.1002/eej.4391150809
https://doi.org/10.1002/eej.4391150809
Autor:
Hiroyasu Hagino, Noriyuki Soejima
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 115:835-844
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9599bf958450947dc80bc24d67f3088
https://doi.org/10.1541/ieejeiss1987.115.6_835
https://doi.org/10.1541/ieejeiss1987.115.6_835
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 115:117-126
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::294a60d80b0a7aca1a099f9508574add
https://doi.org/10.1541/ieejeiss1987.115.1_117
https://doi.org/10.1541/ieejeiss1987.115.1_117
Autor:
Y. Tomomatsu, M. Tabata, Hiroyasu Hagino, Gourab Majumdar, H. Nishihara, N. Soejima, Yamashita Junichi
Publikováno v:
Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.
By virtue of simulation and advanced process technologies the IGBT and the fast recovery diode chip structures have been modified to develop new generation low-loss power chips. These newly structured chips have been integrated into a moduler housing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3af44e29ec25dcf86bbd1e07b3df20a
https://doi.org/10.1109/ispsd.1992.991257
https://doi.org/10.1109/ispsd.1992.991257
Autor:
Hiroyasu Hagino, Masanobu Miyao, Masaharu Ninomiya, Toyotsugu Enokida, Taizoh Sadoh, Masahiko Nakamae, Ryo Matsuura
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator Taizoh Sadoh∗, Ryo Matsuura, Masaharu Ninomiya, Masahiko Nakamae, Toyotsugu Enokida, Hiroyasu Hagino and M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9d5a5c4fdf7965282d53f1d4848f0d5
https://doi.org/10.7567/ssdm.2004.c-8-2
https://doi.org/10.7567/ssdm.2004.c-8-2
Autor:
Hiroyasu Hagino, Y. Tomomatsu, I. Takata, Yamashita Junichi, H. Haruguchi, Hideki Takahashi, Akio Uenishi
Publikováno v:
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.
The short-circuit destruction of class n-ch 600-V IGBTs (insulated-gate bipolar transistors) is investigated experimentally and analyzed with the help of device simulation, focusing on three major destruction modes (power constant, energy constant, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::014c328c407915fff02e5e0c942d3352
https://doi.org/10.1109/ispsd.1993.297103
https://doi.org/10.1109/ispsd.1993.297103