Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Hirotsugu Kida"'
Publikováno v:
Journal of Luminescence. 112:263-266
Transient photocurrent of SrTiO 3 induced by excitation in the fundamental absorption has been measured by the time-of-flight method at low temperatures. The drift mobilities of electrons and holes at 4 K were evaluated to be 1.10 × 10 4 and 7.0 ×
Publikováno v:
Applied Physics Letters. 72:1489-1491
Electroluminescence (EL) from nanocrystalline Si (nc-Si) has been studied by using thin-film light emitting diodes with a structure of glass/SnO2/p-type nc-Si/Al. When positive bias voltages are applied on the SnO2 electrode, light emission from the
Publikováno v:
MRS Proceedings. 639
We have theoretically studied optical properties of a quantum well (QW) in which the well region is constructed from a binary alloy semiconductor A1−xBx in the coherent potential approximation (CPA). A tight binding model is used for a single parti
Publikováno v:
MRS Proceedings. 507
Polarized electroabsorption method has been used to study photo-induced structural changes in hydrogenated amorphous silicon. The field-modulated absorption signal consists of two components, one of which is the true polarization-dependent electroabs
Autor:
Shuichi Nonomura, T. Kanada, Yoshihiro Hamakawa, Dusit Kruangam, S. Sakata, Hiroaki Okamoto, Hirotsugu Kida
Publikováno v:
Journal of Non-Crystalline Solids. :865-868
The optical absorption edge and below gap absorption of a-Si 1−x C x :H system are investigated by photoacoustic spectroscopy and electroabsorption method. Incorporation of carbon atoms introduces the broadening of Urbach tail and increasing of bel
Publikováno v:
Philosophical Magazine B. 52:1115-1133
The statistics for correlated defects under non-equilibrium conditions are derived and applied to formulate the d.c. and a.c. below-gap primary photocurrents (PPC) of undoped a-Si:H. Through a detailed theoretical examination, it has been found that
Publikováno v:
Solar Cells. 8:317-336
A new carrier transport model describing the photovoltaic characteristics of amorphous silicon (a-Si) p-i-n junction (where i denotes intrinsic material) solar cells is proposed. In the model, the operative i layer is divided into two regions at vari
Publikováno v:
Journal of Non-Crystalline Solids. :1103-1106
The mobility-lifetime products and interface property have been examined in actual a-SiC/a-Si/μc-Si heterojunction cells through the analysis of the drift type photovoltaic effect. It is made clear how the transport parameters responsible for the ce
Autor:
T. Kamada, Alberto Tagliaferro, Hiroaki Okamoto, Hirotsugu Kida, Yoshihiro Hamakawa, H. Yamagishi
Publikováno v:
Journal of Non-Crystalline Solids. :413-416
A systematic experiment on the light and current induced effects in a-Si:H has been made. To investigate the underlying physical process various treatments were made on the p-i-n junction, and resulting changes in μτ product and the density of loca
Publikováno v:
Journal of Non-Crystalline Solids. :1441-1449
Useful information about material and junction properties are obtained from the field-modulated reflectance and primary photocurrent measurements, all of which can be readily applied to actual solar cell structures. The paper introduces these spectro