Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hirotoshi YAMAGISHI"'
Autor:
Hirotoshi Yamagishi, Y Shiraishi, Kiyotaka Takano, M Kuramoto, N Machida, T Iida, N Takase, J Matsubara
Publikováno v:
Journal of Crystal Growth. 229:26-30
The purpose of this project is to examine several numerical simulation techniques which have been used for the development of 400 mm silicon single crystals. The temperature distribution in all of the hot zone (HZ) regions is calculated by global hea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17136830407b11afaaf0c52c28fe4c73
https://doi.org/10.1016/s0022-0248(01)01044-2
https://doi.org/10.1016/s0022-0248(01)01044-2
Autor:
Hirotoshi Yamagishi, N Machida, N Takase, Y Shiraishi, J Matsubara, Kiyotaka Takano, T Iida, M Kuramoto
Publikováno v:
Journal of Crystal Growth. 229:31-34
The purpose of this project is the development of a crystal supporting system (CSS) for silicon crystals with large diameters of 400 mm. Amongst the many technical problems the one that the Super Silicon Crystal Research Institute Corp. (SSi) has dir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73d63931b6f8912b20e4d35076002cee
https://doi.org/10.1016/s0022-0248(01)01045-4
https://doi.org/10.1016/s0022-0248(01)01045-4
Autor:
Y Shiraishi, T Iida, N Machida, N Takase, Kiyotaka Takano, Hirotoshi Yamagishi, J Matsubara, M Kuramoto
Publikováno v:
Journal of Crystal Growth. 229:17-21
Since 1996, we have been investigating the crystal growth of 400-mm silicon crystals as the next generation of silicon wafer size after 300 mm. The first dislocation-free crystal was grown in 1998, and the heaviest dislocation free crystal ever, weig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b198ecd05bb4ee6f7d26d9325b0b4296
https://doi.org/10.1016/s0022-0248(01)01042-9
https://doi.org/10.1016/s0022-0248(01)01042-9
Autor:
T Iida, Kiyotaka Takano, Hirotoshi Yamagishi, N Takase, Y Shiraishi, N Machida, M Kuramoto, J Matsubara
Publikováno v:
Materials Science and Engineering: B. 73:30-35
In the SSi project, the growth technologies for 400 mm silicon single crystals have been investigated by several numerical simulation techniques, global heat transfer analysis in a Czochralski (CZ) furnace, structural analysis, analysis of fluid dyna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88a5d160b76ba3aa1696cfdf8df6ddde
https://doi.org/10.1016/s0921-5107(99)00430-4
https://doi.org/10.1016/s0921-5107(99)00430-4
Publikováno v:
Materials Science and Engineering: B. 36:146-149
The quality of Si single crystals with a diameter of up to 150 mm in the length between 1 m to 1.5 m, grown by continuously charging Czochralski (CCZ) method, is studied and the possibility of CCZ method is discussed. The profile of interstitial oxyg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29c4d125d3ab696a013879f253d72685
https://doi.org/10.1016/0921-5107(95)01373-3
https://doi.org/10.1016/0921-5107(95)01373-3
Publikováno v:
Materials Science and Engineering: B. 36:142-145
We studied the quality of Si single crystals with a diameter of 200 mm grown by the horizontal magnetic field applied Czochralski (HMCZ) method. The dopant impurity fluctuation of HMCZ crystals is less than that of CZ ones when a crystal is grown by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acb78a6434e3813dbb604794c09666f4
https://doi.org/10.1016/0921-5107(95)01278-8
https://doi.org/10.1016/0921-5107(95)01278-8
Publikováno v:
Materials Science Forum. :1707-1712
An abrupt change of the crystal growth rate at temperatures in the range 1150–1080°C affects the annihilation or the agglomeration of grown-in defects such as flow pattern defects (FPD), crystal originated particles (COP), laser scattering defects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65378b4707dc667a66b63a033371174b
https://doi.org/10.4028/www.scientific.net/msf.196-201.1707
https://doi.org/10.4028/www.scientific.net/msf.196-201.1707
Publikováno v:
Applied Spectroscopy. 47:1488-1491
We will demonstrate that our micro-FT-IR mapping system is highly effective for investigating the behavior of interstitial oxygen (Oi) in Czochralski-grown silicon single crystals. The micro-FT-IR system experiences high space resolution, and Oi stri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3453088bc5cdefed60cf2657a499f508
https://doi.org/10.1366/0003702934067711
https://doi.org/10.1366/0003702934067711
Publikováno v:
Journal of Crystal Growth. 128:293-297
Oxygen precipitation occurs along growth striations in Czochralski-grown (CZ) silicon single crystal. Interstitial oxygen (Oi) striations in various CZ and horizontal magnetic field Czochralski-grown (HMCZ) silicon single crystals were studied with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d47d63ee954d649f902b5a6e2144f73
https://doi.org/10.1016/0022-0248(93)90336-u
https://doi.org/10.1016/0022-0248(93)90336-u
Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method
Publikováno v:
Materials Science Forum. :189-194
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b062308d8bff3b47737b916b799db15
https://doi.org/10.4028/www.scientific.net/msf.117-118.189
https://doi.org/10.4028/www.scientific.net/msf.117-118.189