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Autor:
Yuki Tokumoto, Kensuke Togase, Ichiro Yonenaga, Sigeto R. Nishitani, Hiroto Taneichi, Yutaka Ohno
Publikováno v:
Physica B: Condensed Matter. 407:3006-3008
The width of a stacking fault ribbon bound by a pair of partial dislocations in silicon crystals was unchanged when boron and gallium atoms of p-type dopant were agglomerated nearby the ribbon by annealing, even though the width increased when n-type