Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Hirotatsu Ishii"'
Autor:
Ryuichiro Minato, Akihiko Kasukawa, Hidehiro Taniguchi, Hirotatsu Ishii, Yutaka Ohki, Takeshi Namegaya
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 128:713-716
We have demonstrated high performance broad area single emitter lasers with window structure fabricated by newly developed impurity free vacancy disordering (IFVD) technique. Vacancies induce quantum well intermixing, leading to bandgap shift. We hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c465ca790e25b4d41b605a4565f267c9
https://doi.org/10.1541/ieejeiss.128.713
https://doi.org/10.1541/ieejeiss.128.713
Publikováno v:
Materials Science Forum. :1527-1530
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d86deabdb7ce48c028d6680267ac3cbb
https://doi.org/10.4028/www.scientific.net/msf.389-393.1527
https://doi.org/10.4028/www.scientific.net/msf.389-393.1527
Publikováno v:
Applied Surface Science. :317-324
Al, Mg and Au Schottky barriers were formed on MBE-grown GaAs(100) surfaces subjected to various treatments including chemical etching, ion etching, sulfur treatment and insertion of an ultrathin Si interface control layer (Si-ICL). They were charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c66810903b59787b570560c3d16c56a
https://doi.org/10.1016/0169-4332(92)90250-2
https://doi.org/10.1016/0169-4332(92)90250-2
Publikováno v:
Applied Surface Science. :390-394
An X-ray photo-electron spectroscopy (XPS) analysis is applied to clarify the composition of the InP insulator-semiconductor structures prepared by the anodic oxidation process. The structures investigated include (i) an anodic oxide/InP structure, (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db28c9842be2abc59d3ed48e329c4070
https://doi.org/10.1016/0169-4332(89)90089-5
https://doi.org/10.1016/0169-4332(89)90089-5
Publikováno v:
Applied Surface Science. :372-382
Electrical characterization reveals several salient common electronic features of insulator-semiconductor (I-S) and semiconductor-semiconductor (S-S) interfaces. Currently available models on the origin of states (defect model, DIGS model, effective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ddf59a193e1ce4d4df290e68993f3ec
https://doi.org/10.1016/0169-4332(89)90087-1
https://doi.org/10.1016/0169-4332(89)90087-1
Autor:
Hirotatsu Ishii, Seikoh Yoshida
Publikováno v:
MRS Proceedings. 693
An AlGaN/GaN hetero field effect transistor (HFET) was operated at 20 A. Its on-state resistance was lower than that of a Si-based FET. GaN and related materials were grown by gas-source molecular beam epitaxy (GSMBE). Sapphire substrates were used f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01558fe3dc14a582c96f26ef93b11a95
https://doi.org/10.1557/proc-693-i12.7.1
https://doi.org/10.1557/proc-693-i12.7.1
Autor:
Hirotatsu Ishii, Seikoh Yoshida
Publikováno v:
MRS Proceedings. 639
A high-power metal semiconductor field-effect transistor (MESFET) for operating at a very large-current using GaN is reported for the first time. GaN was grown by metalorganic chemical vapor deposition (MOCVD). Sapphire substrates were used for GaN g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::571220a4eee084f9dcb87c6932701dea
https://doi.org/10.1557/proc-639-g13.4
https://doi.org/10.1557/proc-639-g13.4
Publikováno v:
Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f916a97bf9dd5989cf96c2f21d3d25f
https://doi.org/10.7567/ssdm.1991.d-5-5
https://doi.org/10.7567/ssdm.1991.d-5-5
Autor:
Takeyoshi Matsuda, Hirotatsu Ishii, Yoshihiro Ishitani, Seikoh Yoshida, Song-Bek Che, Wataru Terashima, Akihiko Yoshikawa
Publikováno v:
Applied Physics Letters. 86:261903
We have succeeded in the growth of very-fine-structure InN∕InGaN (3–16nm∕9nm) multi-quantum wells (MQWs) on GaN underlayer and characterized them by transmission electron microscopy (TEM), high-resolution x-ray diffraction (XRD), and photolumin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c43ee69ecb596ccc965978e8360197
https://doi.org/10.1063/1.1954877
https://doi.org/10.1063/1.1954877
Autor:
Hirotatsu Ishii, Tanaka Shuichi
Publikováno v:
Japanese Journal of Applied Physics. 38:22
The effects of the impurity between the epitaxial layer and substrate (epi/sub) on the current transient were examined by the drain bias pulsed current deep level transient spectroscopy (DLTS) method. Test devices used for evaluation were GaAs metal-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea79a952fc46cbfaf4c96eea90e63f9a
https://doi.org/10.1143/jjap.38.22
https://doi.org/10.1143/jjap.38.22