Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hiroshi Ukegawa"'
Autor:
Shailesh N. Joshi, Feng Zhou, Yanghe Liu, Danny J. Lohan, Hiroshi Ukegawa, Jae Lee, Ercan M. Dede
Publikováno v:
IEEE Transactions on Power Electronics. 38:6790-6794
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb9a2717efb48cc092146e213ccb0f64
https://doi.org/10.1109/tpel.2023.3243546
https://doi.org/10.1109/tpel.2023.3243546
Autor:
Qian Yang, Muhammed A. Gultekin, Vahe Seferian, Krishna Pattipati, Ali M. Bazzi, Francesco A. N. Palmieri, Ravi Rajamani, Shailesh Joshi, Muhamed Farooq, Hiroshi Ukegawa
Publikováno v:
IEEE Transactions on Power Electronics. 37:7315-7332
Power electronics (PE) and high-frequency switching circuits are key to superior performance of electric vehicles. It is vital to monitor the condition of the PE components in real-time for safety and reliability. In this article, we propose two anom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86199b34cf0e1e83c92265f77029bc2c
https://doi.org/10.1109/tpel.2022.3140721
https://doi.org/10.1109/tpel.2022.3140721
Autor:
Ali M. Bazzi, Shailesh N. Joshi, Krishna R. Pattipati, Qian Yang, Muhamed Farooq, Muhammed Ali Gultekin, Hiroshi Ukegawa
Publikováno v:
2021 IEEE International Electric Machines & Drives Conference (IEMDC).
Reliability assessment of power semiconductor devices requires accelerated stress tests. Different test methods might produce different results. In this paper, two different test methods are used for on-state resistance degradation for Si MOSFETs: Hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e8a59f35f954897943210f81f2ad970
https://doi.org/10.1109/iemdc47953.2021.9449532
https://doi.org/10.1109/iemdc47953.2021.9449532
Publikováno v:
Proceedings 2020 Workshop on Binary Analysis Research.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c00469a56f91510a7fdf306bc09157e9
https://doi.org/10.14722/bar.2020.23001
https://doi.org/10.14722/bar.2020.23001
Autor:
Yasuhiro Hirabayashi, Yusuke Konishi, Masashi Yoshimura, Mamoru Imade, Yasuo Kitaoka, Takatomo Sasaki, Naoya Miyoshi, Hiroshi Ukegawa, Yusuke Mori
Publikováno v:
Applied Physics Express. 3:075501
Seeded growth on high-quality GaN seed was studied using a carbon-added Na flux method. A GaN single crystal (8.6 mm long, 5 mm high) was grown in 96 h without polycrystal formation on a crucible. Under a carbon-added condition, dependence of the gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d40af37ed3d11826792ec6d0ff71550
https://doi.org/10.1143/apex.3.075501
https://doi.org/10.1143/apex.3.075501