Zobrazeno 1 - 10
of 191
pro vyhledávání: '"Hiroshi Tochihara"'
Autor:
Hiroshi Tochihara, Kazuma Yagyu, Takayuki Suzuki, Yuriko Aoki, Wataru Mizukami, Tomoya Shiota
Publikováno v:
The Journal of Physical Chemistry C. 124:24704-24712
The molecular hopping of a lone 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) molecule adsorbed on a Ge(001) surface is studied by density functional theory calculations and the climbing-ima...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53cf5bd5bafc06346009eae637593c8e
https://doi.org/10.1021/acs.jpcc.0c05858
https://doi.org/10.1021/acs.jpcc.0c05858
Publikováno v:
The Journal of Physical Chemistry C. 123:2996-3003
Initial growth process of pentacene molecules on clean Si(001)-2 × 1 substrate was investigated by scanning tunneling microscopy. It is found that the wetting layer, which is not crystalline but disordered, forms before the growth of a first crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d82cbe1de66c3768c8f03e48ed902fce
https://doi.org/10.1021/acs.jpcc.8b11238
https://doi.org/10.1021/acs.jpcc.8b11238
Publikováno v:
Physical chemistry chemical physics : PCCP. 22(26)
We have investigated the initial pentacene growth on the Si(111)--In surface using scanning tunneling microscopy. At a low coverage, the molecules lie down flat and form locally ordered molecular layers that are nucleated at the Si step edges. At a h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a10b951e6af380a2b69edb0fddd2a41f
https://pubmed.ncbi.nlm.nih.gov/32578602
https://pubmed.ncbi.nlm.nih.gov/32578602
Autor:
Kazuma Yagyu, Takayuki Suzuki, Takashi Nishida, Toshiya Hamasaki, Hiroshi Tochihara, Hisashi Mitani
Publikováno v:
Journal of Vacuum Science & Technology B. 39:052801
Hydrogen etching of a 4H-SiC(0001) surface at a moderate temperature of 1200 °C with molecular hydrogen gas was investigated to obtain enough flat and clean surface for large-scale high-quality epitaxial graphene synthesis. We found after a prolonge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54383ff7db78144d30f4e52d7a6e8c6d
https://doi.org/10.1116/6.0001147
https://doi.org/10.1116/6.0001147
Publikováno v:
The Journal of Physical Chemistry C. 121:7294-7302
Cu atom penetration through a defect in zero-layer graphene (ZLG) epitaxially grown on an SiC substrate was theoretically investigated, using density functional theory calculations, as a possible mechanism for pure single-layer graphene formation by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75ea46fd26e305041fafebc8f8ca063a
https://doi.org/10.1021/acs.jpcc.7b00314
https://doi.org/10.1021/acs.jpcc.7b00314
Publikováno v:
The Journal of Physical Chemistry C. 121:3320-3326
Adsorption of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on the Ge(001) surface was studied using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and the density-functional theory (DFT) calculations. Only single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2367c87468639773055ad3745e35a11c
https://doi.org/10.1021/acs.jpcc.6b09793
https://doi.org/10.1021/acs.jpcc.6b09793
Publikováno v:
Journal of Chemical Physics; 2015, Vol. 142 Issue 10, p1-7, 7p, 4 Color Photographs, 1 Black and White Photograph, 4 Diagrams, 1 Graph
Publikováno v:
Physical Review B. 94
Very initial stages of the homoepitaxy on the $\mathrm{Si}(111)7\ifmmode\times\else\texttimes\fi{}7$ surface are studied at 310, 356, and $366{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$ by in situ continuous observation using high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d90425f0ecf4a087900ea45847f03fb
https://doi.org/10.1103/physrevb.94.035402
https://doi.org/10.1103/physrevb.94.035402
Autor:
Hiroshi Tochihara, Tetsuroh Shirasawa
Publikováno v:
Progress in Surface Science. 86:295-327
Silicon carbide (SiC) has the potential to serve as an extremely important semiconductor material in next-generation electronics. However, a major stumbling block for its practical application has been the preparation of high-quality interfaces with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0941d8359b0ed40855877e4b5481f898
https://doi.org/10.1016/j.progsurf.2011.08.003
https://doi.org/10.1016/j.progsurf.2011.08.003
Autor:
Takayuki Muro, Toshio Takahashi, Yoshihisa Harada, Hiroshi Tochihara, Satoru Tanaka, Y. Tamenori, Tetsuroh Shirasawa, Toyohiko Kinoshita, Shik Shin, Takashi Tokushima
Publikováno v:
Materials Science Forum. :15-19
The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::861ffca50a135ab5d890065481ef720b
https://doi.org/10.4028/www.scientific.net/msf.675-677.15
https://doi.org/10.4028/www.scientific.net/msf.675-677.15