Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Hiroshi KASHIWADA"'
Autor:
Toshiro K. DOI, Kiyoshi SESHIMO, Tsutomu YAMAZAKI, Masanori OHTSUBO, Hideaki NISHIZAWA, Sachi MURAKAMI, Daizo ICHIKAWA, Yoshio NAKAMURA, Tadakazu MIYASHITA, Yoshihide KAWAMURA, Masataka TAKAGI, Hiroshi KASHIWADA, Hideo AIDA
Publikováno v:
Nihon Kikai Gakkai ronbunshu, Vol 81, Iss 824, Pp 14-00618-14-00618 (2015)
In this study, we propose innovative polishing method for hard-to-process semiconductor substrate such as SiC. Our innovative polishing method mainly consists of 2 technologies. One is unprecedented polishing pad “Dilatancy pad” composed of speci
Externí odkaz:
https://doaj.org/article/1a7f830e563940f191c73d0708c9a60d
