Zobrazeno 1 - 10
of 202
pro vyhledávání: '"Hiroshi HARIMA"'
Autor:
Chun-Wei Chang, Min-Hao Hong, Wei-Fan Lee, Kuan-Ching Lee, Shen-Min Yang, Ming-Shan Tsai, Yen Chuang, Yu-Ta Fan, Noriyuki Hasuike, Hiroshi Harima, Takeshi Ueda, Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo
Publikováno v:
AIP Advances, Vol 2, Iss 2, Pp 022117-022117-11 (2012)
Multiwavelength, high resolution micro-Raman spectroscopy was applied to in-line process monitoring and diagnostics of undoped and B-doped Si1-xGex epitaxy on Si(100) device wafers. This noncontact technique was used to monitor the Ge content, B conc
Externí odkaz:
https://doaj.org/article/a08ae978fee14a61a4e03d2272d85f78
Autor:
Chun-Wei Chang, Min-Hao Hong, Wei-Fan Lee, Kuan-Ching Lee, Shiu-Ko Jang Jian, Yen Chuang, Yu-Ta Fan, Noriyuki Hasuike, Hiroshi Harima, Takeshi Ueda, Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo
Publikováno v:
AIP Advances, Vol 2, Iss 1, Pp 012124-012124-8 (2012)
Non-contact monitoring of Ge content and B concentration in single and double Si1-xGex epitaxial layers on Si(100) device wafers was attempted using high-resolution, multiwavelength micro-Raman spectroscopy. The Ge content and B concentration determi
Externí odkaz:
https://doaj.org/article/212d8a7e9b6b420f87ff8e4bd282227e
Autor:
Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki, Yasuhisa Sano
Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 – October 4, 2013, Miyazaki, Japan
Autor:
Hiroshi Harima, Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo, Noriyuki Hasuike, Jung Gon Kim, Masahiro Yoshimoto
Publikováno v:
ECS Transactions. 98:457-464
For advanced application specific devices, combinations of Si/Ge, Ge/Si, Si1-xGex/Si are frequently introduced in the device fabrication process. Epitaxy, condensation and annealing processes are commonly used for controlling the Ge content to a desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c352013e27e614c11a33e2d3501f9b26
https://doi.org/10.1149/09805.0457ecst
https://doi.org/10.1149/09805.0457ecst
Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing
Autor:
Masahiro Yoshimoto, Hiroshi Harima, Karuppanan Sekar, Woo Sik Yoo, Noriyuki Hasuike, Hiroshi Nishigaki, Kitaek Kang
Publikováno v:
ECS Transactions. 75:605-613
To meet various physical property requirements of materials for advanced high performance devices, combinations of Si1-xGex and Si:C have been introduced for strain control in PMOS and NMOS regions of devices. Two types of carbon (C) doping technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbc1166fee4e146ec524ea4068153359
https://doi.org/10.1149/07508.0605ecst
https://doi.org/10.1149/07508.0605ecst
Autor:
Woo Sik Yoo, Noriyuki Hasuike, Jung Gon Kim, Toshikazu Ishigaki, Masahiro Yoshimoto, Hiroshi Harima, Kitaek Kang
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:123001
Thermal silicidation characteristics of Ni/Si1-xGexwith various Ge content was studied under different annealing temperatures in the range of 225 °C ∼ 400 °C in 100% N2ambient. TiN capped Ni/Si1-xGex/Si/SiO2/Si wafers with x values in the range o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::385af0a56d94102a371c79314c803151
https://doi.org/10.1149/2162-8777/abc833
https://doi.org/10.1149/2162-8777/abc833
Autor:
Hae-Yong Lee, Juan Wang, Hiroshi Harima, Young-Jun Choi, Won-Jae Lee, Jung-Gon Kim, Ju-Hyung Ha
Publikováno v:
Journal of the Korean Physical Society. 66:994-1000
The hydride vapor-phase epitaxy (HVPE) method was used to deposit high-quality InN layers on GaN inter-layer/sapphire (0001) structures that had been fabricated by using either the HVPE method or the metal-organic chemical-phase deposition (MOCVD) me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e77be56fd38ccecdc794fd201e786489
https://doi.org/10.3938/jkps.66.994
https://doi.org/10.3938/jkps.66.994
Polarized Raman Signals from Si Wafers: Dependence of In-Plane Incident Orientation of Probing Light
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:P356-P363
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebffb134ec76ca3db7f8f112ae0f7618
https://doi.org/10.1149/2.0061509jss
https://doi.org/10.1149/2.0061509jss
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 11, p113505-1-113505-7, 7p, 1 Chart, 5 Graphs
Autor:
Noriyuki Hasuike, Shigeyuki Kuboya, Tsuguo Fukuda, Kazuki Ohnishi, Kazuya Yamamura, Takuya Iwabuchi, Takashi Matsuoka, Tomoyuki Tanikawa, Hiroshi Harima
Publikováno v:
Japanese Journal of Applied Physics. 58:SC1023
ScAlMgO4 (SCAM) substrates with a small lattice-mismatch to GaN and c-plane cleavability are promising for fabricating high-quality free-standing GaN wafers. To reduce the cost in the fabrication of free-standing GaN wafers, the reuse of a SCAM subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96c7e737962acbc5367d2aa80830388d
https://doi.org/10.7567/1347-4065/ab06ab
https://doi.org/10.7567/1347-4065/ab06ab