Zobrazeno 1 - 10 of 130 pro vyhledávání: '"Hiroshi Fujiyasu"'
1
LED and Semiconductor Photo-effects on Living Things
Autor: Kentarou Fujiyasu, Hiroshi Fujiyasu, Shunji Sunayama, Takemitsu Ishigaki, Shirou Ujihara, Shuuji Ikoma, Naoharu Watanabe
Publikováno v: Journal of Light & Visual Environment. 32:222-225
We have studied LED irradiation effects on plants and animals in the visible to UV region of light from GaN LEDs. The results are as follows. Blue light considers to be effective for pearl cultivation or for attraction of small fishes living in near
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ac1c1fe9313b15ee13d28c5db067a9b7
https://doi.org/10.2150/jlve.32.222
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2
Zn3N2 compensated ZnTe films and ZnTe–ZnSe superlattices grown by hot wall epitaxy
Autor: Kenei Ishino, Akihiro Ishida, Yoku Inoue, Hidenori Mimura, Hiroshi Fujiyasu, Shingo Sakakibara
Publikováno v: Applied Surface Science. 244:343-346
Nitrogen-doped (N-doped) p-type ZnTe films and ZnTe–ZnSe superlattices (SLs) were prepared on GaAs (1 0 0) substrates by hot wall epitaxy (HWE) using NH 3 gas and Zn 3 N 2 as a codoping source. We have investigated the compensation effect of Zn 3 N
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8bf5d6e561066c1d0aa66c0ba6d9c302
https://doi.org/10.1016/j.apsusc.2004.10.090
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3
Cathodoluminescence of polycrystalline GaN grown by a hot wall epitaxy technique
Autor: T. Hoshino, Akihiro Ishida, Shingo Sakakibara, Hidenori Mimura, Yoichiro Nakanishi, Hiroshi Fujiyasu, Hiroko Kominami, S. Takeda, Yoku Inoue
Publikováno v: physica status solidi (b). 241:2717-2721
Polycrystalline GaN nanostructures were grown on Si(111) substrates by a hot wall epitaxy technique using metallic gallium and ammonia sources. Self-organized pillar-like GaN nanostructures (GaN nanopillar) were grown without intentional pre-processi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3c9edd1f3a68654f648af9c0ccdbcb05
https://doi.org/10.1002/pssb.200405058
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4
Fabrication and characterization of short period AlN/GaN quantum cascade laser structures
Autor: Akihiro Ishida, Takafumi Yao, N. Sone, J. J. Kim, Yoku Inoue, Hiroshi Fujiyasu, Kenei Ishino, Hisao Makino, Masakazu Kuwabara, Shingo Sakakibara, H. Nagasawa
Publikováno v: Journal of Crystal Growth. 265:65-70
Short period AlN/GaN quantum cascade (QC) laser structures that utilize a polarization field for electron injection were fabricated by hot wall epitaxy. A (GaN) n /(AlN) 1 short period superlattice with several molecular layers of AlN was designed in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::91a646ba406a134e28e2e1454d653c61
https://doi.org/10.1016/j.jcrysgro.2004.01.044
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5
[(AlN)1/(GaN)n1]m/(AlN)n2-based quantum wells for quantum-cascade-laser application
Autor: Kenei Ishino, Yoku Inoue, Hisao Makino, H. Nagasawa, J. J. Kim, H Kan, Akihiro Ishida, N. Sone, Takafumi Yao, Hiroshi Fujiyasu
Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 21:765-769
[(AlN) 1 /(GaN) n 1 ] m /(AlN)n2-based quantum wells (QWs) constructed by periodically introducing several atomic layers of AlN into (AlN) 1 /(GaN) n 1 ) short-period superlattices have a great potential for the application to mid-infrared quantum-ca
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f16af82758cdec564d74c273ab2d1c9
https://doi.org/10.1016/j.physe.2003.11.131
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6
Characterization of AlN/GaN Quantum‐Cascade Structures Prepared by Hot‐Wall Epitaxy
Autor: Hiroshi Fujiyasu, Yoku Inoue, Tomohisa Ose, H Kan, Hirokazu Tatsuoka, Takafumi Yao, Hang-Ju Ko, Akihiro Ishida, H. Nagasawa, Hisao Makino
Publikováno v: physica status solidi (c). :520-523
[(AlN)1/(GaN)n1]m/(AlN)n2 quantum-cascade (QC) structures were prepared by hot wall epitaxy for midinfrared laser application, periodically inserting several atomiclayers of AlN into (AlN)1/(GaN)n1 short period superlattices. The (AlN)1/(GaN)n1 short
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7101854ba8bab60d61021ca305ade2c9
https://doi.org/10.1002/pssc.200390103
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7
AlN/GaN short-period superlattices with monolayer AlN for optical-device applications
Autor: Akihiro Ishida, Hiroshi Fujiyasu, Takafumi Yao, Kenei Ishino, Hisao Makino, Yoku Inoue, Tomohisa Ose, M Kitano, H. Nagasawa, H Kan
Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 13:1098-1101
A series of AlN/GaN short-period superlattices with monolayer AlN were prepared by hot-wall epitaxy. The superlattice structure was confirmed by X-ray diffraction through a comparison between the measured diffraction curves and simulated ones, which
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b48ebb5a94849214ebf8174954bf5431
https://doi.org/10.1016/s1386-9477(02)00312-0
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9
Influence of host atom on Mn emission in II–VI superlattices
Autor: Ken-ichi Fujii, T Kiichi, T Ishikawa, K Ito, T Ohyama, Hiroshi Fujiyasu
Publikováno v: Physica B: Condensed Matter. :312-316
We performed time resolved photoluminescence measurements to investigate an influence of host atoms on the emission of Mn impurities in II–VI superlattices. The time variation of the Mn emission has a long tail after photopulse excitation. The life
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c2d7da69b7c175e3071985b237e5219
https://doi.org/10.1016/s0921-4526(01)00446-x
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