Zobrazeno 1 - 10
of 921
pro vyhledávání: '"Hiroshi FUNAKUBO"'
Autor:
Ziwen Zhou, Shun Wang, Zhou Zhou, Yiqi Hu, Qiankun Li, Jinshuo Xue, Zhijian Feng, Qingyu Yan, Zhongshen Luo, Yuyan Weng, Rujun Tang, Xiaodong Su, Fengang Zheng, Kazuki Okamoto, Hiroshi Funakubo, Lixing Kang, Liang Fang, Lu You
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract Recent progress in two-dimensional ferroelectrics greatly expands the versatility and tunability in van der Waals heterostructure based electronics. However, the switching endurance issue that widely plagues conventional ferroelectrics in pr
Externí odkaz:
https://doaj.org/article/e430fee633494841944de840ba24987f
Autor:
Yongtao Liu, Rama K. Vasudevan, Kyle P. Kelley, Hiroshi Funakubo, Maxim Ziatdinov, Sergei V. Kalinin
Publikováno v:
npj Computational Materials, Vol 9, Iss 1, Pp 1-8 (2023)
Abstract We report the development and experimental implementation of the automated experiment workflows for the identification of the best predictive channel for a phenomenon of interest in spectroscopic measurements. The approach is based on the co
Externí odkaz:
https://doaj.org/article/1bf3d97eb552450a93587ddca4350a18
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Publikováno v:
Nano Convergence, Vol 9, Iss 1, Pp 1-9 (2022)
Abstract Epitaxial layers of ferroelectric orthorhombic HfO2 are frequently investigated as model systems for industrially more relevant polycrystalline films. The recent success in stabilizing the orthorhombic phase in the solid-solution cerium oxid
Externí odkaz:
https://doaj.org/article/2581d1f4b471468b8c9d5bf3e58e1603
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract Ferroelectric thin films are important because of their great potential for use in various electric devices such as ferroelectric random-access memory. It was expected that Bi2SiO5, a Si-containing ferroelectric material, would show improved
Externí odkaz:
https://doaj.org/article/3c7a4e612b7442a4a85092a3fcfa364d
Publikováno v:
Advanced Science, Vol 9, Iss 31, Pp n/a-n/a (2022)
Abstract The functionality of ferroelastic domain walls in ferroelectric materials is explored in real‐time via the in situ implementation of computer vision algorithms in scanning probe microscopy (SPM) experiment. The robust deep convolutional ne
Externí odkaz:
https://doaj.org/article/1a5b600ec986436e9aee11cc20ce0c80
Autor:
Rurika Kubota, Akinori Tateyama, Takahisa Shiraishi, Yoshiharu Ito, Minoru Kurosawa, Hiroshi Funakubo
Publikováno v:
AIP Advances, Vol 12, Iss 3, Pp 035241-035241-7 (2022)
Tetragonal (00l)-oriented epitaxial (Bi,K)TiO3 films were grown at 240 °C on (100)cSrRuO3//(100)SrTiO3 substrates by the hydrothermal method. KOH aqueous solutions and Bi(NO3)3 · 5H2O and TiO2 powders were used as the starting materials. Film t
Externí odkaz:
https://doaj.org/article/3db7b0430a024c1ebba58236cbd773cb
Autor:
Tomoaki Yamada, Daisuke Ito, Tomas Sluka, Osami Sakata, Hidenori Tanaka, Hiroshi Funakubo, Takahiro Namazu, Naoki Wakiya, Masahito Yoshino, Takanori Nagasaki, Nava Setter
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract Strain engineering is a widespread strategy used to enhance performance of devices based on semiconductor thin films. In ferroelectrics strain engineering is used to control the domain pattern: When an epitaxial film is biaxially compressed,
Externí odkaz:
https://doaj.org/article/bf8ef723e26b4d1eb16e1242452238e4
Publikováno v:
AIP Advances, Vol 6, Iss 1, Pp 015304-015304-7 (2016)
The temperature dependence of the capacitance of (111)c-oriented (0.90–x)BaTiO3-0.10Bi(Mg0.5Ti0.5)O3-xBiFeO3 solid solution films is investigated. These films are prepared on (111)cSrRuO3/(111)Pt/TiO2/SiO2/(100)Si substrates by the chemical solutio
Externí odkaz:
https://doaj.org/article/967e086324bf4d5ba932f9051f52a286
Publikováno v:
Materials, Vol 4, Iss 1, Pp 260-273 (2011)
We have investigated the role of the Ti–O Coulomb repulsions in the appearance of the ferroelectric state in BaTiO3 as well as the role of the Zn–O Coulomb repulsions in BiZn0.5Ti0.5O3, using a first-principles calculation with optimized structur
Externí odkaz:
https://doaj.org/article/626e03f90caa44de8ec9878189e28a18