Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Hiroshi, Shimomura"'
Autor:
Atsushi Tarui, Hiroshi Shimomura, Yohei Yasuno, Yukiko Karuo, Kazuyuki Sato, Kentaro Kawai, Masaaki Omote
Publikováno v:
ACS Omega, Vol 9, Iss 24, Pp 26275-26284 (2024)
Externí odkaz:
https://doaj.org/article/e881a9dd326c49079a27c7ae07977f10
Autor:
Yuuya, MASHIMA, Hiroshi, Shimomura
Publikováno v:
上越教育大学研究紀要 = Bulletin of Joetsu University of Education. 41(2):449-454
Autor:
Ayako, YASUKAWA, Hiroshi, SHIMOMURA
Publikováno v:
上越教育大学研究紀要 = Bulletin of Joetsu University of Education. 39(2):509-516
Autor:
Tsuyoshi Tatemoto, Taiki Sugiura, Nobuhiro Kumazawa, Takuma Ii, Shin Kitamura, Shigeo Tanabe, Yosuke Hirayama, Hiroshi Shimomura, Koji Mizuno, Yohei Otaka
Publikováno v:
Injury prevention : journal of the International Society for Child and Adolescent Injury Prevention. 28(5)
ObjectiveTo elucidate the performance of a shock-absorbing floor material with a mechanical metamaterial (MM-flooring) structure and its effect on the gait and balance of older adults.MethodsThe drop-weight impact was applied to evaluate the shock-ab
Autor:
Tsuyoshi Tatemoto, Taiki Sugiura, Nobuhiro Kumazawa, Takuma Ii, Shin Kitamura, Shigeo Tanabe, Yosuke Hirayama, Hiroshi Shimomura, Koji Mizuno, Yohei Otaka
Publikováno v:
Injury Prevention (1353-8047); Oct2022, Vol. 28 Issue 5, p410-414, 5p
Autor:
Hiroshi, Shimomura
Publikováno v:
上越教育大学研究紀要 = Bulletin of Joetsu University of Education. 36(2):565-570
Publikováno v:
上越教育大学研究紀要. 30:207-214
Publikováno v:
Journal of Materials Research. 25:1917-1928
We developed a new microscale technique for evaluating the local interface adhesion in a thin film stack and we compared it with a conventional four-point bending technique. Using the microscale technique, the interface adhesion was estimated to be 3
Publikováno v:
上越教育大学研究紀要. 29:249-255
ひと生活圏内にある小規模な池で採取した水及び堆積物試料を環境教育に活用するための基礎資料を得るため, 上越教育大学構内の弁天池を対象として, 水温, pH, 導電率, 溶存酸素濃度,
Publikováno v:
IEICE Transactions on Electronics. :678-684
The downscaling of CMOS technology has resulted in strong improvement in RF performance of bulk and SOI MOSFETs. In order to realize a low-noise RF circuit, a deeper understanding of the noise performance for MOSFETs is required. Thermal noise is the