Zobrazeno 1 - 10
of 248
pro vyhledávání: '"Hiroo Yonezu"'
Autor:
S. Mitsuyoshi, R. Noma, K. Umeno, Akihiro Wakahara, Yuzo Furukawa, Hiroo Yonezu, Noriyuki Urakami
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 42:2772-2776
We have grown self-assembled InGaAsN/GaP quantum dots (QDs) with an In composition of 50% via the Stranski–Krastanov growth mode of molecular-beam epitaxy, obtaining high-density InGaAsN islands of 8×10 10 cm −2 . When the InGaAsN islands are di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::016f82249ba8cb2428255448be8e59c2
https://doi.org/10.1016/j.physe.2009.11.014
https://doi.org/10.1016/j.physe.2009.11.014
Publikováno v:
physica status solidi c. 7:2498-2501
We have demonstrated the acceptor concentration control for p-type GaPN grown by molecular beam epitaxy (MBE) using Mg as the acceptor element. The hole concentration increases up to 2×1019 cm-3 at 300 K and does not remarkably vary after thermal tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ae3ece9850cdef24391ef628691545c
https://doi.org/10.1002/pssc.200983851
https://doi.org/10.1002/pssc.200983851
Publikováno v:
Journal of Crystal Growth. 312:231-237
We have demonstrated that Mg is a controllable acceptor element for p-type GaAsN alloys grown by solid-source molecular-beam epitaxy (MBE), where a hole concentration has been realized up to 1.5×10 20 cm −3 and has been controlled along the vapor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::963c2669ee21920c616c34426216a1e9
https://doi.org/10.1016/j.jcrysgro.2009.10.012
https://doi.org/10.1016/j.jcrysgro.2009.10.012
Autor:
K. Umeno, Hirofumi Kan, Yasufumi Takagi, Hiroo Yonezu, Yuzo Furukawa, Akihiro Wakahara, R. Noma, Hiroshi Okada
Publikováno v:
Journal of Crystal Growth. 311:1748-1753
We demonstrated an appropriate growth procedure for GaAsN/GaP(N) single quantum wells (SQWs) with abrupt heterointerfaces in solid-source molecular beam epitaxy able to prevent the formation of unwanted As/P intermixing layers caused by residual As p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbddc0afe782cd9fe7963ea0607abdb8
https://doi.org/10.1016/j.jcrysgro.2008.10.075
https://doi.org/10.1016/j.jcrysgro.2008.10.075
Autor:
Hiroshi Okada, Tomohito Kobayashi, Akihiro Wakahara, Hiroo Yonezu, Keisuke Yamane, Yuzo Furukawa
Publikováno v:
Journal of Crystal Growth. 311:794-797
We investigated the surface morphology of 50-nm-thick GaP layers grown on Si substrates, by atomic force microscopy. Pits with a density of about 10 8 cm -2 were observed at the surface of GaP layers grown by conventional migration-enhanced epitaxy (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b203c932bb0a6ebf714f0b59b93edbc8
https://doi.org/10.1016/j.jcrysgro.2008.09.097
https://doi.org/10.1016/j.jcrysgro.2008.09.097
Publikováno v:
Journal of Crystal Growth. 310:4757-4762
Structural-defect-free growth of III–V–N alloys on a Si substrate has been established, which was based on lattice-matching. The electric conductivity and photoluminescence properties of a basic III–V–N alloy of GaPN were investigated, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2af8659b0408c98dbca56d123ac90e1
https://doi.org/10.1016/j.jcrysgro.2008.07.073
https://doi.org/10.1016/j.jcrysgro.2008.07.073
Autor:
Weimin Chen, Daniel Dagnelund, Akihiro Wakahara, Hiroo Yonezu, Irina Buyanova, Xingjun Wang, S. Moon, Igor Vorona, A. Utsumi, Yuzo Furukawa
Publikováno v:
Superlattices and Microstructures. 43:620-625
We employ the optically detected magnetic resonance (ODMR) technique to study and identify important grown-in defects in Ga(In)NP grown by molecular-beam epitaxy (MBE). Several types of defects were revealed from ODMR studies. The dominant defects we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b78038c85a37d32b5eaa33d311b595f
https://doi.org/10.1016/j.spmi.2007.07.008
https://doi.org/10.1016/j.spmi.2007.07.008
Autor:
Akihiro Wakahara, Weimin Chen, A. Utsumi, Hiroo Yonezu, Daniel Dagnelund, Yuzo Furukawa, Irina Buyanova
Publikováno v:
physica status solidi c. 5:460-463
A detailed study of the impact of different growth conditions (i.e. ion bombardment, nitrogen flow and In content) on the defect formation in Ga(In)NP epilayers grown on GaP substrates by solid-source molecular beam epitaxy is performed. Reduced nitr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb0635baa55ece48a951ccafd2960fd9
https://doi.org/10.1002/pssc.200777458
https://doi.org/10.1002/pssc.200777458
Publikováno v:
Optical Review. 14:282-289
We proposed in this study a novel analog complementary metal oxide semiconductor (CMOS) circuit for generating a motion signal when an object moves, which is a simple structure. The proposed unit circuit was constructed using a previously proposed ed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d43f3a87c5369a81a4f86a2044e019ca
https://doi.org/10.1007/s10043-007-0282-z
https://doi.org/10.1007/s10043-007-0282-z
Publikováno v:
Optical Review. 14:271-281
We proposed in this research a novel two-dimensional network based on the frog visual system, with a motion detection function and a newly developed simple-shape recognition function, for use in object discrimination by integrated circuits. Specifica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b850d6e70f1b3db2c9449f20204b5e81
https://doi.org/10.1007/s10043-007-0271-2
https://doi.org/10.1007/s10043-007-0271-2