Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Hironori Yoshioka"'
Autor:
Hironori Yoshioka, Tomonori Honda
Publikováno v:
AIP Advances, Vol 11, Iss 1, Pp 015101-015101-5 (2021)
A rough interface seems to be one of the possible reasons for low channel mobility (conductivity) in SiC metal-oxide-semiconductor field-effect transistors. To evaluate the mobility by interface roughness, we drew a boundary line between an amorphous
Externí odkaz:
https://doaj.org/article/506f3694d854450d812d60e795a11565
Autor:
Hironori Yoshioka
Publikováno v:
AIP Advances, Vol 9, Iss 7, Pp 075306-075306-5 (2019)
The low channel mobility and the high interface state density at SiO2/SiC interfaces is quantitatively explained by introducing potential fluctuation at interfaces. The density of states with the perturbation potential is calculated through the self-
Externí odkaz:
https://doaj.org/article/f3c3dceeec074c979137b33882f892ba
Autor:
Hironori Yoshioka, Kazuto Hirata
Publikováno v:
AIP Advances, Vol 8, Iss 4, Pp 045217-045217-10 (2018)
The characteristics of SiC MOSFETs (drain current vs. gate voltage) were measured at 0.14−350 K and analyzed considering variable-range hopping conduction through interface states. The total interface state density was determined to be 5.4×1012 cm
Externí odkaz:
https://doaj.org/article/29c8a3797f4c4f4f884d50fc90f8874a
Publikováno v:
AIP Advances, Vol 6, Iss 10, Pp 105206-105206-6 (2016)
Processes to form aluminum oxide as a gate insulator on the 4H-SiC Si-face are investigated to eliminate the interface state density (DIT) and improve the mobility. Processes that do not involve the insertion or formation of SiO2 at the interface are
Externí odkaz:
https://doaj.org/article/cef79ebac8ed4ac483e74a78d6f5cf10
Publikováno v:
AIP Advances, Vol 5, Iss 1, Pp 017109-017109-11 (2015)
We investigated the effects of the interface state density (DIT) at the interfaces between SiO2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors that were subjected to dry/nitridation and pyrogeni
Externí odkaz:
https://doaj.org/article/efc2a0a51f4f4c1bafeca4a4fc1c0653
Autor:
Hironori Yoshioka, Tomonori Honda
Publikováno v:
AIP Advances, Vol 11, Iss 1, Pp 015101-015101-5 (2021)
A rough interface seems to be one of the possible reasons for low channel mobility (conductivity) in SiC MOSFETs. To evaluate the mobility by interface roughness, we drew a boundary line between amorphous insulator and crystalline 4H-SiC in a cross-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d59498f5af0b26899ffade2759e369b
Publikováno v:
Materials Science Forum. :745-748
We have evaluated interface state density (DIT) for EC−ET > 0.00 eV from the subthreshold slope deterioration of MOSFETs at low temperatures. We have compared two n-channel MOSFETs on the C- and a-faces with the gate oxide formed by pyrogenic oxida
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 1, p1-4, 4p, 4 Graphs
Autor:
Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hironori Yoshioka, Hajime Okumura, Takashi Nakamura, Tsunenobu Kimoto
Publikováno v:
Materials Science Forum. :418-423
We focused on the inability of the common high-low method to detect very fast interface states, and developed methods to evaluate such states (CψS method). We have investigated correlation between the interface state density (DIT) evaluated by the C
Publikováno v:
IEEE Transactions on Electron Devices. 56:2632-2637
4H-SiC (0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) with a 3-D gate structure, which has a top channel on the (0001) face and side-wall channels on the {112macr0} face, have been fabricated. The 3-D gate structures with a 1-5-m