Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Hironori Tsukamoto"'
Autor:
Hironori Tsukamoto
Publikováno v:
Solid-State Electronics. 43:487-492
p–n junctions formed by BF 2 ion implantation and pulse laser annealing were studied. Boron atoms implanted were sufficiently activated without being subject to diffusion during laser annealing by optimizing the irradiation energy. In the diffusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd7fba8cdc48374156a7b46997b99622
https://doi.org/10.1016/s0038-1101(98)00319-0
https://doi.org/10.1016/s0038-1101(98)00319-0
Publikováno v:
Journal of Crystal Growth. 191:679-684
The optical characteristics of ZnCdSe/ZnSSe single quantum wells (SQW) were studied using photoluminescence (PL) measurements. The PL intensity depends on the strain of ZnSSe layers and the thickness and Cd content of ZnCdSe layers. Using this depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f00206da2c073f9b7ca418ffd4ecb9e0
https://doi.org/10.1016/s0022-0248(98)00380-7
https://doi.org/10.1016/s0022-0248(98)00380-7
Publikováno v:
IEEE Photonics Technology Letters. 17:1411-1413
We present a novel optical switching technique utilizing emission packet positioning of semiconductor heterostructure. A modulation-doped p-AlGaAs-GaAs heterostructure is employed to control spontaneous emission packet positioning with electric field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aceca3386a94aa0eb79964c4db61f276
https://doi.org/10.1109/lpt.2005.848330
https://doi.org/10.1109/lpt.2005.848330
Publikováno v:
Applied Physics Letters. 82:3197-3199
A potential technique for modulating the light emission resulting from excess minority carrier recombination in a semiconductor device is introduced. This process utilizes an electric field to transport a packet of minority carriers past an optical o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97b6aa2ecf4a77e23bcd98a9105009d8
https://doi.org/10.1063/1.1572467
https://doi.org/10.1063/1.1572467
Autor:
Hironori Tsukamoto, Fumio Mukai, Yasuhiro Furuichi, Nobuo Goto, Hideyuki Mannen, Susumu Ohtagaki, Soichi Tsuji
Publikováno v:
Nihon Chikusan Gakkaiho. 64:474-479
ウシ由来の脂肪代謝の一酵素リポプロテイン•リパーゼ(LPL)のcDNAをプローブとして黒毛和種のゲノムDNAの分析を行ない,RFLPを見出した.LPLのcDNAをアミノ酸をコードしている5'の部分と3'の
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b466c6e88046f3ea10192bffd4e40fa
https://doi.org/10.2508/chikusan.64.474
https://doi.org/10.2508/chikusan.64.474
Publikováno v:
Applied Physics Letters. 78:952-954
The carrier profile for InAs films grown on GaP is modeled as a first-order approximation which assumes that 90° edge dislocation intersections and the threading dislocation intersections act as shallow donors. Due to dislocation annihilation during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e56245d4bab811e5050d04e46ae5c1d
https://doi.org/10.1063/1.1338956
https://doi.org/10.1063/1.1338956
Autor:
Masaharu Nagai, Akira Ishibashi, Masao Ikeda, Hironori Tsukamoto, Kohshi Tamamura, Eisaku Katoh
Publikováno v:
Applied Physics Letters. 70:1453-1455
Nitrogen doping in ZnSe using a new type of electron-cyclotron-resonance (ECR) source has been investigated. Selective nitrogen radical doping is performed using the ECR source with an external electrode, which can remove charged particles in the nit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::864f2eeadfce7f0a01f75f29a4e1cdf9
https://doi.org/10.1063/1.118644
https://doi.org/10.1063/1.118644
Publikováno v:
International Semiconductor Device Research Symposium, 2003.
A novel concept of semiconductor optical routing device for short distance optical communication system, such as a board to board communication or grid computing. A semiconductor optical routing devices utilizing minority-carrier-drift was discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::264cfab1179acd537bb0e030c7169aca
https://doi.org/10.1109/isdrs.2003.1272369
https://doi.org/10.1109/isdrs.2003.1272369
Publikováno v:
International Semiconductor Device Research Symposium, 2003.
A potential luminesence intensity modulation technique in LED utilizing lateral carrier drift and optical exit apertures has been proposed. An externally applied lateral voltage can dynamically control both the external intensity and the spatial posi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27682fc3dac3a2f05ea68d647343f93f
https://doi.org/10.1109/isdrs.2003.1272110
https://doi.org/10.1109/isdrs.2003.1272110
Publikováno v:
Optical Amplifiers and Their Applications/Integrated Photonics Research.
A concept of novel semiconductor optical signal routing device is proposed for short-distance optical communication. We show that the optical signals can be spatially delivered to output-fibers by biasing AlGaAs/GaAs heterostructure device instead of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cf571eaea8ca8f304d726c59f2dc24e
https://doi.org/10.1364/ipr.2004.ithb4
https://doi.org/10.1364/ipr.2004.ithb4