Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Hironori Okumura"'
Autor:
Yun Jia, Sora Sato, Aboulaye Traoré, Ryo Morita, Erwann Broccoli, Fenfen Fenda Florena, Muhammad Monirul Islam, Hironori Okumura, Takeaki Sakurai
Publikováno v:
AIP Advances, Vol 13, Iss 10, Pp 105306-105306-7 (2023)
In this work, p-type cuprous oxide (Cu2O) films grown on beta gallium oxide (β-Ga2O3) substrates by magnetron sputtering were reported. The resulting vertical Cu2O/β-Ga2O3 heterojunction p–n diodes demonstrated superior performance compared to de
Externí odkaz:
https://doaj.org/article/3d3ee6116ab8477a839b6e314ec65146
Autor:
Masataka Imura, Manabu Togawa, Masaya Miyahara, Hironori Okumura, Jiro Nishinaga, Meiyong Liao, Yasuo Koide
Publikováno v:
Functional Diamond, Vol 2, Iss 1, Pp 167-174 (2022)
The response property and stability of diamond Schottky barrier photodiodes (SBPDs) were investigated for the monitor applications of deep ultraviolet (DUV) light and high-energy radiation particles. The SBPDs were fabricated on the unintentionally d
Externí odkaz:
https://doaj.org/article/bf79685c0c594ed0b5eae722d65530ce
Autor:
Jiro Nishinaga, Manabu Togawa, Masaya Miyahara, Kosuke Itabashi, Hironori Okumura, Masataka Imura, Yukiko Kamikawa, Shogo Ishizuka
Publikováno v:
Japanese Journal of Applied Physics. 62:SK1014
Radiation tolerance of Cu(In,Ga)Se2 (CIGS) solar cells has been investigated using high-fluence proton beam irradiation for application to devices in extremely-high-radiation environments. CIGS solar cells deteriorated after high-energy proton irradi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d6be8e10683ed901701c05398499eb5
https://doi.org/10.35848/1347-4065/acc53b
https://doi.org/10.35848/1347-4065/acc53b
Autor:
Hironori Okumura, Yasuhiro Watanabe, Tomohiko Shibata, Kohei Yoshizawa, Akira Uedono, Hiroki Tokunaga, Shuuichi Koseki, Tadanobu Arimura, Sami Suihkonen, Tomás Palacios
Funding Information: This work was supported by JSPS KAKENHI Grant No. 16H06424 and 19H02166, and the ARPA-E PNDIODES program. S. Suihkonen acknowledges the financial support of the Academy of Finland (grant 297916) and the Foundation for Aalto Unive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d02523ec9ffac1325de0af9515eb587
https://aaltodoc.aalto.fi/handle/123456789/113362
https://aaltodoc.aalto.fi/handle/123456789/113362
Autor:
Hironori Okumura, Akira Uedono
Publikováno v:
Japanese Journal of Applied Physics. 62(2):020901
Mg ions were implanted in 1 μm thick AlN layers grown on sapphire substrates. The Mg implantation with a total dose of 5 × 1014 cm−2 introduced Al-vacancy related defects, which were decreased by annealing at temperatures over 1400 °C in an N2 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a49f62b81ac3d624a5e04af5608777c9
https://tsukuba.repo.nii.ac.jp/records/2006325
https://tsukuba.repo.nii.ac.jp/records/2006325
Autor:
Hironori Okumura
Publikováno v:
Japanese Journal of Applied Physics. 61:125505
Solid-state materials with a large bandgap energy have potential for high-temperature, high-power, radiation-hardened, and ultraviolet-light applications. α-Al2O3, with a bandgap energy of ∼9 eV, is one of the most attractive such materials. Howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29855d67182698e4aa0377aec76ef987
https://doi.org/10.35848/1347-4065/aca196
https://doi.org/10.35848/1347-4065/aca196
Autor:
Sami Suihkonen, Jori Lemettinen, Iurii Kim, Tomas Palacios, Hironori Okumura, Nadim Chowdhury
Publikováno v:
IEEE Electron Device Letters. 40:1245-1248
This letter reports the demonstration of N-polar Al0.8Ga0.2N/AlN continuously-graded-channel polarization-doped field-effect transistors (PolFETs) on SiC. A PolFET with a source to drain distance of $12~\mu \text{m}$ exhibited a maximum drain current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0df0462fd809a6b612e54181a4208010
https://doi.org/10.1109/led.2019.2923902
https://doi.org/10.1109/led.2019.2923902
Publikováno v:
Japanese Journal of Applied Physics. 61:091002
Photoconductivity transients in an unintentionally doped (UID) n-type β-Ga2O3 layer are investigated at temperatures ranging from 90 to 210 K. Illumination of the β-Ga2O3 layer with a 600 nm light pulse induces photoconductivity, which persists aft
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d4bb65adf5d9b0e820e02e0d0ff68e1
https://doi.org/10.35848/1347-4065/ac7f6e
https://doi.org/10.35848/1347-4065/ac7f6e
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f2632701da743682364e0dda2c662c
https://doi.org/10.7567/ssdm.2020.d-9-02
https://doi.org/10.7567/ssdm.2020.d-9-02
Autor:
Iurii Kim, Tomas Palacios, Christoffer Kauppinen, Jori Lemettinen, Sami Suihkonen, Hironori Okumura
Publikováno v:
arXiv
We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈1¯100〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28c6758a4b4839a9957a29b553f04f5d
http://juuli.fi/Record/0287476118
http://juuli.fi/Record/0287476118