Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Hironori Gamo"'
Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract Heteroepitaxy has inherent concerns regarding crystal defects originated from differences in lattice constant, thermal expansion coefficient, and crystal structure. The selection of III–V materials on group IV materials that can avoid thes
Externí odkaz:
https://doaj.org/article/d346599b59ba4a959488ae84dff69128
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Publikováno v:
ECS Transactions. 98:149-153
Abstract High performance transistors are required for the beyond CMOS in terms of low drive voltage, high drain current, high ION/IOFF ratio, and scalability. A superlattice (SL) resonance tunneling field-effect transistor (RTFET) achieves a steep s
Autor:
Hironori Gamo, Katsuhiro Tomioka
Publikováno v:
IEEE Electron Device Letters. 41:1169-1172
Among the III-V semiconductor materials, indium arsenide (InAs) nanowire (NWs) with high carrier mobility are expected to be alternative channels for high-performance and low-power field-effect transistors (FETs). However, there is a challenge in enh
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1011
We characterized the current injection and electroluminescence (EL) properties of wurtzite (WZ) InP nanowire (NW) light-emitting diodes (LEDs) with axial junctions. The EL spectra of two samples with the same LED junction structure exhibited two diff
Publikováno v:
ECS Transactions. 92:71-78
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We present vertical gate-all-around (VGAA) tunnel FETs (TFETs) using InGaAs nanowire (NW)/Si heterojunction with modulation doped core-multishell NW structures. The NW/Si heterojunction was composed of the axial n+-InGaAs/intrinsic InGaAs NW/p-Si. We
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Autor:
Katsuhiro Tomioka, Hironori Gamo
Publikováno v:
Journal of Crystal Growth. 500:58-62
III-V compound semiconductors are promising channel materials for the future low-power and high-performance transistor because of their high electron/hole mobility. Here, we report on the integration of vertical InAs nanowire (NW)-channels on Si by s
Publikováno v:
2019 Compound Semiconductor Week (CSW).
This paper reports on selective-area growth of vertical InAs/InAsP core-shell (CS) NWs on Si, and demonstration of vertical surrounding-gate transistors (SGTs) and InAs/InP CS NW-Si heterojunction TFET. NWs were grown by selective-area metalorganic v