Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Hironori Gamo"'
Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract Heteroepitaxy has inherent concerns regarding crystal defects originated from differences in lattice constant, thermal expansion coefficient, and crystal structure. The selection of III–V materials on group IV materials that can avoid thes
Externí odkaz:
https://doaj.org/article/d346599b59ba4a959488ae84dff69128
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414146e31c532a998e02e6a4e0043397
https://doi.org/10.1109/csw55288.2022.9930398
https://doi.org/10.1109/csw55288.2022.9930398
Publikováno v:
ECS Transactions. 98:149-153
Abstract High performance transistors are required for the beyond CMOS in terms of low drive voltage, high drain current, high ION/IOFF ratio, and scalability. A superlattice (SL) resonance tunneling field-effect transistor (RTFET) achieves a steep s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::184b700cf88eee050c130b7efca6f005
https://doi.org/10.1149/09806.0149ecst
https://doi.org/10.1149/09806.0149ecst
Autor:
Hironori Gamo, Katsuhiro Tomioka
Publikováno v:
IEEE Electron Device Letters. 41:1169-1172
Among the III-V semiconductor materials, indium arsenide (InAs) nanowire (NWs) with high carrier mobility are expected to be alternative channels for high-performance and low-power field-effect transistors (FETs). However, there is a challenge in enh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b525f3b80841fa07e420f17bc20c2574
https://doi.org/10.1109/led.2020.3004157
https://doi.org/10.1109/led.2020.3004157
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1011
We characterized the current injection and electroluminescence (EL) properties of wurtzite (WZ) InP nanowire (NW) light-emitting diodes (LEDs) with axial junctions. The EL spectra of two samples with the same LED junction structure exhibited two diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0118042e56a629117a345c7781b020c1
https://doi.org/10.35848/1347-4065/aca985
https://doi.org/10.35848/1347-4065/aca985
Publikováno v:
ECS Transactions. 92:71-78
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::603694f8de68ff7627228f27414f2264
https://doi.org/10.1149/09204.0071ecst
https://doi.org/10.1149/09204.0071ecst
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We present vertical gate-all-around (VGAA) tunnel FETs (TFETs) using InGaAs nanowire (NW)/Si heterojunction with modulation doped core-multishell NW structures. The NW/Si heterojunction was composed of the axial n+-InGaAs/intrinsic InGaAs NW/p-Si. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::898734838f09b9df235f2e80bdb746f9
https://doi.org/10.1109/iedm13553.2020.9371991
https://doi.org/10.1109/iedm13553.2020.9371991
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::526b65521fa0314da8d8b3f3b0bf0634
https://doi.org/10.7567/ssdm.2020.h-1-02
https://doi.org/10.7567/ssdm.2020.h-1-02
Autor:
Katsuhiro Tomioka, Hironori Gamo
Publikováno v:
Journal of Crystal Growth. 500:58-62
III-V compound semiconductors are promising channel materials for the future low-power and high-performance transistor because of their high electron/hole mobility. Here, we report on the integration of vertical InAs nanowire (NW)-channels on Si by s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c0851a9b1305cebba0887e2d281a3cd
https://doi.org/10.1016/j.jcrysgro.2018.07.035
https://doi.org/10.1016/j.jcrysgro.2018.07.035
Publikováno v:
2019 Compound Semiconductor Week (CSW).
This paper reports on selective-area growth of vertical InAs/InAsP core-shell (CS) NWs on Si, and demonstration of vertical surrounding-gate transistors (SGTs) and InAs/InP CS NW-Si heterojunction TFET. NWs were grown by selective-area metalorganic v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cadda16f68b258cb62528b8ee493bc30
https://doi.org/10.1109/iciprm.2019.8819044
https://doi.org/10.1109/iciprm.2019.8819044