Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Hironori Daikoku"'
Autor:
Hiroaki Saito, Koji Moriguchi, Kazuaki Seki, Kazuhiko Kusunoki, Akinori Seki, Hironori Daikoku, Motohisa Kado, Shunta Harada, Mitustoshi Akita, Hiroshi Kaido, Takayuki Shirai, Yutaka Kishida, Toru Ujihara
Publikováno v:
Materials Science Forum. 924:39-42
The dislocation behavior during bulk crystal growth on the 4H-SiC (000-1) C-face using the solution method was investigated. A 2 inch wafer with a 4° off angle was fabricated from a bulk crystal grown by the TSSG method, and the dislocations in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17dadae659108b51c1d2e5434ffefbca
https://doi.org/10.4028/www.scientific.net/msf.924.39
https://doi.org/10.4028/www.scientific.net/msf.924.39
Autor:
Kazuhiko Kusunoki, Koji Moriguchi, Yutaka Kishida, Motohisa Kado, Takayuki Shirai, Mitustoshi Akita, Kazuaki Seki, Hironori Daikoku, Hiroaki Saito, Hiroshi Kaido
Publikováno v:
Materials Science Forum. 924:31-34
This study reports our newly developed technology for SiC solution growth. In particular, we succeed in completely suppressing solvent inclusions, which have been a serious technological problem peculiar to the solution growth method. Then, we fabric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea6a51abbbe8c128e31112efee9002b0
https://doi.org/10.4028/www.scientific.net/msf.924.31
https://doi.org/10.4028/www.scientific.net/msf.924.31
Publikováno v:
Crystal Growth & Design. 18:3820-3826
To determine the mechanism of 4H-SiC replication during solution growth on a concave surface, SiC growth on a 2-in.-diameter 4H-SiC (0001) seed and on 0.5-in. square seeds of different planes was ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd8f8ee3d839da00630a116fcb0da6f
https://doi.org/10.1021/acs.cgd.8b00032
https://doi.org/10.1021/acs.cgd.8b00032
Suppressing solvent compositional change during solution growth of SiC using SiC/C gradient crucible
Publikováno v:
Journal of Crystal Growth. 576:126382
To develop a long-term and stable growth technology for the solution growth of silicon carbide (SiC), the use of the newly fabricated SiC/C gradient crucible was studied. The fabrication of the SiC/C gradient structure was achieved by a two-step heat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c4a7601d571b5f7fde0f2f5f260d52a
https://doi.org/10.1016/j.jcrysgro.2021.126382
https://doi.org/10.1016/j.jcrysgro.2021.126382
Publikováno v:
The Journal of Chemical Thermodynamics. 160:106476
Solution growth using a Si–Cr-based solvent is a promising process to produce high quality 4H–SiC single crystal. Computational fluid dynamics simulation is an effective method to estimate and control the temperature and fluid flow in the process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b76c865b6bbbc7f3509b37b238236420
https://doi.org/10.1016/j.jct.2021.106476
https://doi.org/10.1016/j.jct.2021.106476
Publikováno v:
MATERIALS TRANSACTIONS. 58:1434-1438
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11eafe8b883578224dd5574d42466e67
https://doi.org/10.2320/matertrans.m2016465
https://doi.org/10.2320/matertrans.m2016465
Autor:
Kazuhiko Kusunoki, Koji Moriguchi, Akinori Seki, Kazuaki Sato, Motohisa Kado, Yutaka Kishida, Hiroshi Kaidou, Takeshi Bessho, Hironori Daikoku, Kazuhito Kamei
Publikováno v:
Crystal Growth & Design. 16:1256-1260
A long-term growth of high-quality 4H-SiC single crystals by a top-seeded solution growth method using a Si–Cr-based melt was investigated. A new growth technique called “solution growth on concave surface” (SGCS) was developed to help prevent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77e305712565fb21c40491014d6630ba
https://doi.org/10.1021/acs.cgd.5b01265
https://doi.org/10.1021/acs.cgd.5b01265
Autor:
Takeshi Yoshikawa, Hidemitsu Sakamoto, Kazuhiko Kusunoki, Kazuhito Kamei, Sakiko Kawanishi, Hironori Daikoku, Taka Narumi
Publikováno v:
Journal of Crystal Growth. 408:25-31
Solution growth of SiC is currently regarded as a promising process to produce high-quality SiC crystals. To date, Si–Cr, Si–Ti, and Fe–Si solvents have been used for rapid solution growth of SiC. However, optimization of the solvent system and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a89f0debef6ab1516e6ca0c83540504a
https://doi.org/10.1016/j.jcrysgro.2014.08.027
https://doi.org/10.1016/j.jcrysgro.2014.08.027
Autor:
Takeshi Bessho, Nobuhiro Okada, Motohisa Kado, Kazuhito Kamei, Hidemitsu Sakamoto, Koji Moriguchi, Hironori Daikoku, Kazuhiko Kusunoki, Toru Ujihara
Publikováno v:
Journal of Crystal Growth. 395:68-73
The top-seeded solution growth of 4H-SiC at three inches in diameter has been investigated using Si–Ti alloy as a solvent. A perforated graphite disk called “immersion guide” (IG) was positioned in the solution in order to control solution flow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd3b6551ca489aacdd309e7ca0f19be3
https://doi.org/10.1016/j.jcrysgro.2014.03.006
https://doi.org/10.1016/j.jcrysgro.2014.03.006
Autor:
Kazuhito Kamei, Takeshi Bessho, Hidemitsu Sakamoto, Koji Moriguchi, Toru Ujihara, Hironori Daikoku, Katsunori Danno, Hiroshi Kaido, Nobuhiro Okada, Kazuhiko Kusunoki, Motohisa Kado
Publikováno v:
Materials Science Forum. :79-82
We performed top-seeded solution growth of 4H-SiC for obtaining longer length crystal. Si-Cr and Si-Ti melts were used as solvents. Meniscus formation technique was applied to the present study. Special attention was paid to improve the process stabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94c961d6e2df5c54b651ab434c71d95c
https://doi.org/10.4028/www.scientific.net/msf.778-780.79
https://doi.org/10.4028/www.scientific.net/msf.778-780.79