Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Hironobu Nishikawa"'
Publikováno v:
Journal of Cancer, Vol 3, Iss 1, Pp 14-18 (2012)
A choriocarcinoma component with a malignant tumor is relatively rare. We present a case of an 85-year-old woman with mixed carcinoma, which was endometrioid adenocarcinoma with squamous differentiation, choriocarcinoma and a disseminated peritoneal
Externí odkaz:
https://doaj.org/article/7505a4b18e83441bbecd7ee1c5e1915b
Autor:
Hiroe Itami, Eriko Nakagawa, Miho Muraji, Tamotsu Sudo, Chiho Ohbayashi, Kiyoshi Fujiwara, Seiji Kanayama, Sayaka Ueno, Fumi Kawakami, Ryuichiro Nishimura, Hironobu Nishikawa, Satoshi Yamaguchi, Senn Wakahashi, Takashi Yamada
Publikováno v:
Journal of Cancer
A choriocarcinoma component with a malignant tumor is relatively rare. We present a case of an 85-year-old woman with mixed carcinoma, which was endometrioid adenocarcinoma with squamous differentiation, choriocarcinoma and a disseminated peritoneal
Publikováno v:
Nihon Rinsho Geka Gakkai Zasshi (Journal of Japan Surgical Association). 65:2362-2367
過去10年間で餠による食餌性イレウスを2例経験した.自験例を含む1982年以降の本邦報告28例の文献的考察を加えた.症例1は68歳,男性.嘔吐・突然の上腹部痛,腹部CTにて小腸の拡張・鏡面像を
Autor:
Takashi Koyama, Takaki Sugimoto, Masahiko Umeki, Hironobu Nishikawa, Takeshi Hatta, Hiromi Maeda, Sigeru Kurisu
Publikováno v:
Surgery Today. 32:1102-1105
We report the unusual case of a 73-year-old man who underwent surgery for bilateral popliteal artery entrapment syndrome (PAES). A medial approach was used to operate on the left leg, and the vein bypass was made from the superficial femoral artery t
Publikováno v:
Applied Surface Science. :399-402
We have reported that the crystallinity of GaAs on Si (GaAs/Si) grown by chemical beam epitaxy (CBE) depends on the growth temperatures of the top GaAs and nucleation layers. The GaAs layer on Si, grown at 500°C for the top GaAs layer and 400°C for
Autor:
Guang Yuan, Zhao, Yohsuke, Iwama, Nozomu, Sasaki, Atsushi, Oda, Hironobu, Nishikawa, Tetsuo, Soga, Takashi, Egawa, Takashi, Jimbo, Masayoshi, Umeno
Publikováno v:
名古屋工業大学紀要. 47:235-238
Publikováno v:
Materials Science Forum. :535-538
Publikováno v:
Scopus-Elsevier
Photoluminescence and Electron-Spin-Resonance Studies of Defects in Ion-Implanted Thermal SiO2 Films
Autor:
M. Takiyama, Eiji Watanabe, Daisuke Ito, Hisao Fukui, Hironobu Nishikawa, Yoshimichi Ohki, A. Ieki
Publikováno v:
Materials Science Forum. :97-102
Publikováno v:
Journal of Crystal Growth. 150:681-684
This paper describes the reduction of dislocation density in molecular beam epitaxy (MBE)-grown GaAs on Si with GaSb intermediate layer by thermal cycle annealing (TCA). The effects of the annealing temperature on the crystal quality of the top GaAs