Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Hironobu Narui"'
Publikováno v:
Applied Sciences, Vol 5, Iss 3, Pp 555-565 (2015)
We investigated the spectral and temporal characteristics of blue-violetfemtosecond optical pulses generated by a passively mode-locked GaInN laser diode ina dispersion-compensated external cavity. The output optical pulses at 400 nm wereanalyzed in
Externí odkaz:
https://doaj.org/article/a992a94656a24fe89ad096ac6a761409
Autor:
Yangming Du, Hongyang Yan, Peng Luo, Xiao Tan, Ekkanath Madathil Sankara Narayanan, Hiroji Kawai, Shuichi Yagi, Hironobu Narui
Publikováno v:
IEEE Transactions on Electron Devices. 70:178-184
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85789fbd01977d4c12182773a5f9dcb0
https://doi.org/10.1109/ted.2022.3225695
https://doi.org/10.1109/ted.2022.3225695
Autor:
Alireza Sheikhan, Sankara Narayanan Ekkanath Madathil, Hiroji Kawai, Shuichi Yagi, Hironobu Narui
Publikováno v:
Japanese Journal of Applied Physics.
Gallium Nitride (GaN) devices inherently offer many advantages over silicon power devices including higher operating frequency, lower on-state resistance, and higher operating temperature capabilities, which can enable higher power density, more effi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b59bf6b1bf4bb8acafb4b857834e04bf
https://doi.org/10.35848/1347-4065/acd975
https://doi.org/10.35848/1347-4065/acd975
Autor:
Alireza Sheikhan, Gopika Narayanankutty, E. M. Sankara Narayanan, Hiroji Kawai, Shuichi Yagi, Hironobu Narui
Publikováno v:
Japanese Journal of Applied Physics. 62:014501
The surge current capability of power diodes is one of the essential parameters that needs to be considered for high power density operations in power electronic applications. Gallium Nitride (GaN) is emerging as the next generation of power semicond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::728b472942cd36523ffd649c47c43c8c
https://doi.org/10.35848/1347-4065/aca853
https://doi.org/10.35848/1347-4065/aca853
Autor:
Yusuke Nakayama, Toshiya Uemura, Hironobu Narui, Hidekazu Kawanishi, Masahiro Murayama, Hideki Watanabe, Noriyuki Fuutagawa
Publikováno v:
2018 IEEE International Semiconductor Laser Conference (ISLC).
High-power green laser diodes were successfully fabricated on semipolar {20–21} GaN substrates with a maximum output power of more than 2 W. Semipolar {20–21} GaN was shown to be useful for obtaining a high output power and high wall-plug efficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff7d3df91ee5671865514b6dae1b2ed9
https://doi.org/10.1109/islc.2018.8516153
https://doi.org/10.1109/islc.2018.8516153
Autor:
Masayuki Tanaka, Tatsuro Jyoukawa, Maho Ohara, Tatsushi Hamaguchi, Hironobu Narui, Noriko Kobayashi, Tatsuya Matou, Hideki Watanabe, Kentaro Hayashi, Rintaro Koda, Kentaro Fujii, Hiroshi Nakajima, Ito Masamichi
Publikováno v:
2018 IEEE International Semiconductor Laser Conference (ISLC).
The recent progress in GaN-based vertical-cavity surface-emitting lasers (VCSELs) having dielectric distributed Bragg reflectors, including the device characteristics of GaN-based VCSELs with a newly proposed cavity structure incorporating an atomica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea47fb7b27c7fe79a4512b45f1bf2b31
https://doi.org/10.1109/islc.2018.8516154
https://doi.org/10.1109/islc.2018.8516154
Autor:
Maho Ohara, Susumu Satou, Noriko Kobayashi, Masayuki Tanaka, Hironobu Narui, Jugo Mitomo, Kentaro Fujii, Tatsushi Hamaguchi, Ito Masamichi, Hiroshi Nakajima, Hideki Watanabe, Rintaro Koda
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
We demonstrate the lateral optical confinement of GaN-based vertical-cavity surface-emitting lasers (GaN-VCSELs) with a cavity containing a curved mirror that is formed monolithically on a GaN wafer. The output wavelength of the devices is 441–455
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7039a37ac3824ff62d9288554da968db
http://europepmc.org/articles/PMC6037682
http://europepmc.org/articles/PMC6037682
Publikováno v:
physica status solidi (a). 213:1170-1176
We have achieved continuous-wave (CW) operation of gallium nitride (GaN)-based vertical-cavity surface-emitting lasers (VCSELs) fabricated by epitaxial lateral overgrowth (ELO) using dielectric distributed Bragg reflectors (DBRs) as masks for selecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30ca9b6c3bf5161323d9884b534198bf
https://doi.org/10.1002/pssa.201532759
https://doi.org/10.1002/pssa.201532759
Publikováno v:
Applied Sciences, Vol 5, Iss 3, Pp 555-565 (2015)
Applied Sciences
Volume 5
Issue 3
Pages 555-565
Applied Sciences
Volume 5
Issue 3
Pages 555-565
We investigated the spectral and temporal characteristics of blue-violetfemtosecond optical pulses generated by a passively mode-locked GaInN laser diode ina dispersion-compensated external cavity. The output optical pulses at 400 nm wereanalyzed in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::029cbe34efba6c71678fae8789dcf558
http://www.mdpi.com/2076-3417/5/3/555
http://www.mdpi.com/2076-3417/5/3/555
Autor:
Ito Masamichi, Rintaro Koda, Kentaro Fujii, Jugo Mitomo, Tatsushi Hamaguchi, Masayuki Tanaka, Noriko Kobayashi, Hiroshi Nakajima, Maho Ohara, Hironobu Narui, Hideki Watanabe
Publikováno v:
Conference on Lasers and Electro-Optics.
The recent progress in GaN-based vertical-cavity surface-emitting lasers (VCSELs) having dielectric distributed Bragg reflectors, including the device characteristics of GaN-based VCSELs with a newly proposed cavity structure incorporating an atomica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fdeb276d59836b0455ef065cdcd6dd2
https://doi.org/10.1364/cleo_si.2018.stu4q.2
https://doi.org/10.1364/cleo_si.2018.stu4q.2