Zobrazeno 1 - 10
of 107
pro vyhledávání: '"Hironobu, Miyamoto"'
Autor:
Daiki Wakimoto, Chia-Hung Lin, Quang Tu Thieu, Hironobu Miyamoto, Kohei Sasaki, Akito Kuramata
Publikováno v:
Applied Physics Express. 16:036503
We demonstrate high-performance normally-off multi-fin β-Ga2O3 vertical transistors with a wide fin width from 1.0 to 2.0 μm by using a nitrogen-doped β-Ga2O3 high-resistive layer grown by halide vapor phase epitaxy. Normally-off operation was ach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e37560c76448e7689fd913c0f4dacbb
https://doi.org/10.35848/1882-0786/acc30e
https://doi.org/10.35848/1882-0786/acc30e
Autor:
Yongzhao Yao, Daiki Wakimoto, Hironobu Miyamoto, Kohei Sasaki, Akito Kuramata, Keiichi Hirano, Yoshihiro Sugawara, Yukari Ishikawa
Publikováno v:
Scripta Materialia. 226:115216
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62533ff9b29b7ef11b82db47edbde695
https://doi.org/10.1016/j.scriptamat.2022.115216
https://doi.org/10.1016/j.scriptamat.2022.115216
Publikováno v:
Applied Physics Express. 15:016501
We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::197143bac68beaa5b385ad06773fabd5
https://doi.org/10.35848/1882-0786/ac4080
https://doi.org/10.35848/1882-0786/ac4080
Autor:
Hironobu Miyamoto, Masami Sawada, Takehiro Ueda, Hiroshi Kawaguchi, Yasuhiro Okamoto, Machiko Fujita, Tatsuo Nakayama
Publikováno v:
Japanese Journal of Applied Physics. 59:044002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::530d6a37fe00cb9dca22371ec707dca6
https://doi.org/10.35848/1347-4065/ab778a
https://doi.org/10.35848/1347-4065/ab778a
Publikováno v:
2018 IEEE Wireless Power Transfer Conference (WPTC).
This paper evaluates the maximum transmission efficiency in dielectric of wireless power transmission (WPT) system using parallel four lines. Simulation results showed that, the transmission efficiency decreased greatly in case of the length of paral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e544b2750a6e02b8e9c13d5f882f1f4c
https://doi.org/10.1109/wpt.2018.8639368
https://doi.org/10.1109/wpt.2018.8639368
Most results regarding induced current in the human body related to electric field dosimetry have been calculated under uniform field conditions. We have found in previous work that a contact current is a more suitable way to evaluate induced electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f32e31a0661f8dd7d637a88666dec50b
https://trepo.tuni.fi/handle/10024/125825
https://trepo.tuni.fi/handle/10024/125825
Autor:
A. Wakejima, K. Matsunaga, Naotaka Kuroda, Masahiro Tanomura, Yuji Ando, Yasuhiro Okamoto, Hironobu Miyamoto, Kazuki Ota, Tatsuo Nakayama
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 2:95-101
This paper deals with the thermal design of an electronics package and a demonstration of reduced thermal resistance for high-power amplifiers (HPAs). The focus is package internal thermal management. A carbon fiber-reinforced carbon composite- (C/C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::959af131525479dddd8d5e8532007552
https://doi.org/10.1109/tcpmt.2011.2169673
https://doi.org/10.1109/tcpmt.2011.2169673
Autor:
H. Miwa, Tatsuo Nakayama, Takashi Inoue, Koji Hirata, M. Kosaki, Yuji Ando, T. Uemura, Hironobu Miyamoto
Publikováno v:
IEEE Transactions on Electron Devices. 55:483-488
To improve the pinched-off characteristics of an AlGaN/GaN heterojunction field effect transistor (HJFET), the conduction band potential of an incorporated ALxGa1-xN buffer is designed to be upwardly convex in a band diagram. This approach utilizes t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d95fb2b76dce4939af531d0be004510a
https://doi.org/10.1109/ted.2007.912367
https://doi.org/10.1109/ted.2007.912367
Autor:
Akio Wakejima, Kohji Matsunaga, Kazuki Ota, Yasuhiro Okamoto, Masahiro Tanomura, Naotaka Kuroda, Hironobu Miyamoto, Tatsuo Nakayama, Yuji Ando
Publikováno v:
IEICE Transactions on Electronics. :929-936
This paper describes a high power GaN-FET amplifier which is developed for wideband code division multiple access (W-CDMA) base stations. We design a bias network which is symmetrically arranged to the RF line (two way bias network) in order to reduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5291323c1cab15b0df7290dce2f682c
https://doi.org/10.1093/ietele/e90-c.5.929
https://doi.org/10.1093/ietele/e90-c.5.929
Autor:
Hironobu Miyamoto, Kohji Matsunaga, Kazuki Ota, Tatsuo Nakayama, Yasuhiro Okamoto, Akio Wakejima, Yuji Ando
Publikováno v:
Japanese Journal of Applied Physics. 46:2312-2315
A C-band high-power amplifier is successfully developed with two-chip 24-mm-wide GaN-based field effect transistors (FET). At 5.0 GHz, the fabricated GaN-FET amplifier delivers a 171 W cw output power with 11 dB linear gain and 38% power-added effici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f92eb40bd4c9686a4172b05d8ac8cc
https://doi.org/10.1143/jjap.46.2312
https://doi.org/10.1143/jjap.46.2312