Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Hiromitsu Mashita"'
Autor:
Weiting Wang, Yukio Asaka, Hiromitsu Mashita, Shigeki Nojima, Ken Hanafusa, Takamasa Takaki, Hironobu Taoka, Kyle Braam, Ahmed Omran, Jiro Higuchi, Seung-Hee Baek, Ryan Chen, Guangming Xiao
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XIV.
Memory cells and access structures consume a large percentage of area in embedded devices so there is a high return from shrinking the cell area as much as possible. This aggressive scaling leads to very difficult resolution, 2D CD control and proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::755db6f03fca38d9198073859db5c230
https://doi.org/10.1117/12.2557847
https://doi.org/10.1117/12.2557847
Autor:
Ryota Aburada, Toshiya Kotani, Hiromitsu Mashita, Nozomu Furuta, Masanari Kajiwara, Sachiko Kobayashi
Publikováno v:
SPIE Proceedings.
Hot spot fixing (HSF) method has been used to fix many hot spots automatically. However, conventional HSF based on a biasing based modification is difficult to fix many hot spots under a low-k1 lithography condition. In this paper we proposed a new H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b33cc4d1ed6b5be094aca33255e03c69
https://doi.org/10.1117/12.2046272
https://doi.org/10.1117/12.2046272
Publikováno v:
SPIE Proceedings.
A practical flare-aware optical proximity correction (OPC) tool for full-chip level has been developed for upcoming extreme ultraviolet lithography (EUVL). The conventional flare-aware OPC method for EUVL is unsuitable for practical use because it re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7568651d299a933d69882dbe1a7e477a
https://doi.org/10.1117/12.916129
https://doi.org/10.1117/12.916129
Autor:
Hiromitsu Mashita, Ryoji Yoshikawa, Shinji Yamaguchi, Shingo Kanamitsu, Masato Naka, Takashi Hirano, Keiko Morishita
Publikováno v:
SPIE Proceedings.
Based on an acceptable wafer critical dimension (CD) variation that takes device performance into consideration, we presented a methodology for deriving an acceptable mask defect size using defect printability [1]-[3]. The defect printability is meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19f79bc68b2e667fd5113b84c7a0e460
https://doi.org/10.1117/12.899899
https://doi.org/10.1117/12.899899
Autor:
Shoji Mimotogi, Hiromitsu Mashita, Toshiya Kotani, Soichi Inoue, Takafumi Taguchi, Katsumi Iyanagi, Fumiharu Nakajima
Publikováno v:
SPIE Proceedings.
Computational spacer patterning technology (SPT) has been developed for the first time to address the challenges concerning hotspots and mask specifications in SPT. A simulation combined with a lithography, etching and deposition model shows the stro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f055c43a9728d8e72599fb6f49171306
https://doi.org/10.1117/12.868940
https://doi.org/10.1117/12.868940
Autor:
Kohji Hashimoto, Tadahito Fujisawa, Takashi Sugihara, Makoto Kaneko, Yoshihiro Yanai, Seiro Miyoshi, Keiko Morishita, Takashi Hirano, Masato Naka, Soichi Inoue, Hidefumi Mukai, Ayumi Kobiki, Shinji Yamaguchi, Hiromitsu Mashita, Minori Kajimoto, Yoshiyuki Horii, Hiroyuki Morinaga
Publikováno v:
SPIE Proceedings.
We obtained the acceptable mask defect size for both opaque and clear defects in the spacer patterning process using the fail-bit-map analysis and a mask with programmed defects. The spacer patterning process consists of the development of photoresis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7548ecde7b0cea4dd2b9af37fd9e735f
https://doi.org/10.1117/12.837132
https://doi.org/10.1117/12.837132
Autor:
Toshiya Kotani, Kohji Hashimoto, Katsumi Iyanagi, Soichi Inoue, Hiromitsu Mashita, Hidefumi Mukai, Takafumi Taguchi
Publikováno v:
SPIE Proceedings.
Novel optical proximity correction (OPC) and design for manufacturability (DfM) methodology for threedimensional (3D) memory device is proposed to overcome emerging hotspot issues caused by larger process proximity effect (PPE) due to unavoidable hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7da76647bb40d40c8ee77b0099698dfc
https://doi.org/10.1117/12.824301
https://doi.org/10.1117/12.824301
Autor:
Takashi Hirano, Kenji Kawano, Seiro Miyoshi, Hiromitsu Mashita, Shinji Yamaguchi, Yuuji Kobayashi, Kohji Hashimoto, Hidefumi Mukai
Publikováno v:
SPIE Proceedings.
We have studied both the mask CD specification and the mask defect specification for spacer patterning technology (SPT). SPT has the possibility of extending optical lithography to below 40nm half-pitch devices. Since SPT necessitates somewhat more c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0fd7df15c7ec04e226a82f4c341998f
https://doi.org/10.1117/12.804744
https://doi.org/10.1117/12.804744
Autor:
Shinji Yamaguchi, Yuuji Kobayashi, Hidefumi Mukai, Ayumi Kobiki, Soichi Inoue, Takashi Hirano, Hiromitsu Mashita, Seiro Miyoshi, Kohji Hashimoto
Publikováno v:
Photomask Technology 2008.
We studied the mask defect printability for both opaque and clear defects in the spacer patterning process. The spacer patterning process consists of the development of photoresist film, the etching of the core film using the photoresist pattern as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::174a85550e2d0d4dd7e77d62f0af53b0
https://doi.org/10.1117/12.801410
https://doi.org/10.1117/12.801410
Autor:
Kohji Hashimoto, Hiromitsu Mashita, Fumiharu Nakajima, Soichi Inoue, Toshiya Kotani, Satoshi Tanaka, Kazuya Sato, Hidefumi Mukai
Publikováno v:
SPIE Proceedings.
Flow of fixing of hot spot induced by optical variation among exposure tools is discussed for quick ramp-up of high volume products. To achieve robust pattern formation for optical variation, following hot spot detection and fixing approaches are int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7162e6ae01046ba95e08970cf5847988
https://doi.org/10.1117/12.793125
https://doi.org/10.1117/12.793125