Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hiromichi Ikki"'
Autor:
Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Isamu Akasaki, Tatsuyuki Sakakibara, Yusuke Mori, Yasuhiro Isobe, Tetsuya Takeuchi, Hiromichi Ikki, Takayuki Sugiyama, Mamoru Imade
Publikováno v:
Journal of Crystal Growth. 351:126-130
We investigated unintentionally doped nonpolar a- and m-plane GaN layers grown by metalorganic vapor phase epitaxy under several sets of conditions on freestanding a- and m-plane GaN substrates. Oxygen contamination in a-plane GaN is greatly reduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39bf6905cafd8d988afa0cb9c495c15c
https://doi.org/10.1016/j.jcrysgro.2012.04.030
https://doi.org/10.1016/j.jcrysgro.2012.04.030
Autor:
Yasuhiro Isobe, Isamu Akasaki, Satoshi Kamiyama, Motoaki Iwaya, Hiromichi Ikki, Kazuya Ikeda, Tatsuyuki Sakakibara, Hiroshi Amano, Tetsuya Takeuchi
Publikováno v:
physica status solidi c. 9:942-944
We report on the electrical properties of AlInN/GaInN heterostructures fabricated with InN molar fractions of 0 to 0.6 in the GaInN layer. High-density two-dimensional electron gases are formed near the interfaces of AlInN/AlN/GaInN at InN molar frac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::860389beace888d825d6e0db38aae751
https://doi.org/10.1002/pssc.201100492
https://doi.org/10.1002/pssc.201100492
Autor:
Motoaki Iwaya, Isamu Akasaki, Satoshi Kamiyama, Hiromichi Ikki, Daisuke Iida, Yasuhiro Isobe, Akira Bandoh, Takashi Udagawa, Hiroshi Amano, Tetsuya Takeuchi
Publikováno v:
physica status solidi (a). 208:1614-1616
We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea332a33d84bed74812d9c0a3e903447
https://doi.org/10.1002/pssa.201001153
https://doi.org/10.1002/pssa.201001153
Autor:
Isamu Akasaki, Yasuhiro Isobe, Mamoru Imade, Satoshi Kamiyama, Hiroshi Amano, Hiromichi Ikki, Takayuki Sugiyama, Tetsuya Takeuchi, Tatsuyuki Sakakibara, Yusuke Mori, Motoaki Iwaya, Yasuo Kitaoka
Publikováno v:
Applied Physics Express. 4:064102
We fabricated and characterized nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors (HFETs) grown on an a-plane freestanding GaN substrate. By optimizing the growth conditions, the unintentionally doped oxygen concentration was much r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6768020a590aee061c45822487e1b147
https://doi.org/10.1143/apex.4.064102
https://doi.org/10.1143/apex.4.064102