Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Hiromi Shimamoto"'
Autor:
Takashi Hashimoto, Yusuke Nonaka, Tatsuya Tominari, Tsuyoshi Fujiwara, Tsutomu Udo, Hidenori Satoh, Kunihiko Watanabe, Tomoko Jimbo, Hiromi Shimamoto, Satoru Isomura
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 1, Iss 11, Pp 181-190 (2013)
Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance. The BiCMOS process is divided into blocks, and the ordering of their processing is optim
Externí odkaz:
https://doaj.org/article/755f6d35a8704830ba57f99ce8a44626
Autor:
Hidenori Satoh, Takashi Hashimoto, T. Tominari, Tomoko Jimbo, Kunihiko Watanabe, Hiromi Shimamoto, Tsuyoshi Fujiwara, Satoru Isomura, Yusuke Nonaka, Tsutomu Udo
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 1, Iss 11, Pp 181-190 (2013)
Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance. The BiCMOS process is divided into blocks, and the ordering of their processing is optim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7d22570374ea17fe27a36fbf37a5d35
https://ieeexplore.ieee.org/document/6681899/
https://ieeexplore.ieee.org/document/6681899/
Publikováno v:
Solid-State Electronics. 53:869-872
High-concentration in-situ boron-doping technique has been successfully developed to fabricate an ultra-shallow base layer of SiGe HBTs. Extremely high-concentration doping with abrupt profiles in the Si/SiGe layers can be achieved without high-tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d8c5076465c4a8abdb527ce95708fb1
https://doi.org/10.1016/j.sse.2009.04.032
https://doi.org/10.1016/j.sse.2009.04.032
Publikováno v:
ECS Transactions. 16:1089-1094
Silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) are promising candidates for the realization of ultra-high-speed communication systems using wide-bandwidth microwaves and millimeter waves [1]. To obtain higher operation speeds and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::756c34333de5f535901a62b758ad0419
https://doi.org/10.1149/1.2986872
https://doi.org/10.1149/1.2986872
Autor:
R. Hayami, T. Tominari, Takayuki Hashimoto, Katsuyoshi Washio, Hiromi Shimamoto, A. Kodama, Makoto Miura
Publikováno v:
IEEE Transactions on Electron Devices. 53:857-865
A high-temperature anneal-resistant process, which enables high-speed SiGe HBTs to embed scaled CMOS, is optimized in SiGe BiCMOS technology. This process, called promoting emitter diffusion (PED), is based on enhanced phosphorous diffusion from poly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36ec807fe4ef407d315e8ec4a4a6d622
https://doi.org/10.1109/ted.2006.871169
https://doi.org/10.1109/ted.2006.871169
Autor:
T. Harada, T. Masuda, Masao Kondo, Katsuya Oda, R. Hayami, Hiromi Shimamoto, Nobuhiro Shiramizu, Katsuyoshi Washio, Eiji Ohue, Kenichi Ohhata
Publikováno v:
IEEE Journal of Solid-State Circuits. 40:791-795
A 4:1 multiplexer (MUX) IC for 40 Gb/s and above operations in optical fiber link systems has been developed. The ICs are based on 122-GHz-f/sub T/ 0.2-/spl mu/m self-aligned selective-epitaxial-growth SiGe HBT technology. To reduce output jitter cau
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd210135124e9e4023a8b3be6c085019
https://doi.org/10.1109/jssc.2005.843612
https://doi.org/10.1109/jssc.2005.843612
Autor:
Takashi Hashimoto, Hiromi Shimamoto, Yooichi Tamaki, K. Ohnishi, Takeo Shiba, Toshiyuki Kikuchi
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 87:9-17
We propose a high-precision polycrystalline-silicon film resistor having a quasi-double-layer (QDL) composed of a large-grain layer and a small-grain layer. The electrical characteristics of the polycrystalline-silicon film resistor can be controlled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::361c534f76a42bf37acc2c50f3a3a4e3
https://doi.org/10.1002/ecjb.10174
https://doi.org/10.1002/ecjb.10174
Autor:
Hiromi Shimamoto, T. Tominari, Makoto Miura, Eiji Ohue, Katsuyoshi Washio, A. Kodama, Katsuya Oda, Takayuki Hashimoto, Isao Suzumura, R. Hayami
Publikováno v:
IEEE Transactions on Electron Devices. 50:2417-2424
A scaled-down self-aligned selective-epitaxial-growth (SEG) SiGe HBT, structurally optimized for an emitter scaled down toward 100 nm, was developed. This SiGe HBT features a funnel-shaped emitter electrode and a narrow separation between the emitter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51e8cc6c36128856d264b96968671ba9
https://doi.org/10.1109/ted.2003.819259
https://doi.org/10.1109/ted.2003.819259
Autor:
Isao Suzumura, Eiji Ohue, A. Kodama, Katsuya Oda, Katsuyoshi Washio, R. Hayami, Hiromi Shimamoto
Publikováno v:
IEEE Transactions on Electron Devices. 50:2213-2220
Si/sub 1-x-y/Ge/sub x/C/sub y/ selective epitaxial growth (SEG) was performed by cold-wall, ultrahigh-vacuum chemical vapor deposition, and the effects of incorporating C on the crystallinity of Si/sub 1-x-y/Ge/sub x/C/sub y/ layers and the performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e6d976af56113dde676d36b6affecb5
https://doi.org/10.1109/ted.2003.816660
https://doi.org/10.1109/ted.2003.816660
Autor:
Katsuyoshi Washio, Makoto Miura, Hiromi Shimamoto, Katsuya Oda, Eiji Ohue, A. Kodama, Isao Suzumura, R. Hayami
Publikováno v:
Japanese Journal of Applied Physics. 42:2359-2362
The effect of incorporated C on preventing the diffusion of B in selectively grown Si1-x-yGexCy layers has been studied. The diffusivity of B was significantly decreased by increasing the C content, even when the concentrations of B were high. Furthe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de7040848b19951d0faeffcef13c6f2e
https://doi.org/10.1143/jjap.42.2359
https://doi.org/10.1143/jjap.42.2359