Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Hiromasa Yamanashi"'
Publikováno v:
Japanese Journal of Applied Physics. 47:6554-6557
The critical-dimension scanning electron microscope (CD-SEM) is an essential tool for semiconductor fabrication process control because of its high resolution and high precision. However, in ArF lithography, the CD of resist changes during CD-SEM mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e49b667bac44fa7d8c7152d6a1051ee
https://doi.org/10.1143/jjap.47.6554
https://doi.org/10.1143/jjap.47.6554
Publikováno v:
Thin Solid Films. 516:2050-2057
Mo–Si multilayer structures were grown by ion-beam and magnetron sputtering to make high-performance mask blanks for practical use in extreme-ultraviolet (EUV) lithography. For ion-beam sputtering, the effect of using Ar or Xe as the sputtering gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a224e8682612adf99d0896a5fc0f6f3c
https://doi.org/10.1016/j.tsf.2007.07.182
https://doi.org/10.1016/j.tsf.2007.07.182
Publikováno v:
Japanese Journal of Applied Physics. 42:3776-3783
Pattern printability by alternating phase shift mask (alt-PSM) is discussed by simulation. The alt-PSM with an additive structure that provides a completely flat surface structure on a multilayer mask blank is considered. The additive structure is co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a91f3b187e7a9ba00ff3585b0c398e6d
https://doi.org/10.1143/jjap.42.3776
https://doi.org/10.1143/jjap.42.3776
Publikováno v:
Microelectronic Engineering. :10-16
The printability of isolated line patterns was investigated through simulations. An attenuated phase-shift mask (att-PSM) in combination with annular illumination has the capability of printing 18-nm-long line patterns. The pattern edge contrast of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6216470d1361ac71c37928ce82bae5a3
https://doi.org/10.1016/s0167-9317(03)00055-8
https://doi.org/10.1016/s0167-9317(03)00055-8
Publikováno v:
Japanese Journal of Applied Physics. 42:228-235
In order to clarify the influence of multilayer stress distribution on the pattern placement accuracy of an extreme ultraviolet (EUV) mask, the in-plane displacement (IPD) of the mask was calculated using a simulation model based on two-dimensional p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e36b0e65ce4caf3d07e5474ad96c8a3
https://doi.org/10.1143/jjap.42.228
https://doi.org/10.1143/jjap.42.228
Publikováno v:
Japanese Journal of Applied Physics. 41:6498-6505
In order to determine the selection of the extreme ultraviolet (EUV) mask substrate, an assessment model based on the temperature profile along the substrate thickness is proposed. Regarding the glass ceramic materials, thermal deflection and displac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f200b48fc1dcd415e105cda387c0230b
https://doi.org/10.1143/jjap.41.6498
https://doi.org/10.1143/jjap.41.6498
Autor:
Eiichi Hoshino, Hiromasa Hoko, Shinji Okazaki, Akira Chiba, Masaaki Ito, Hiromasa Yamanashi, Byoung Taek Lee, Taro Ogawa, Takashi Yoneda
Publikováno v:
Microelectronic Engineering. :193-202
A three-dimensional transient heat conduction model for predicting the change in temperature of an extreme ultraviolet lithography (EUVL) mask due to periodic scanning exposure was developed. The transient temperature of a mask was calculated in deta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fce8894fad66536a93a08bc914e184e4
https://doi.org/10.1016/s0167-9317(02)00567-1
https://doi.org/10.1016/s0167-9317(02)00567-1
Autor:
Taro Ogawa, Shinji Okazaki, Akira Chiba, Takashi Yoneda, Hiromasa Yamanashi, Masaaki Ito, Hiromasa Hoko, Byoung Taek Lee, M. Takahashi, Eiichi Hoshino
Publikováno v:
Microelectronic Engineering. :233-239
The feasibility of using Ru as a buffer layer or an etch stopper in EUVL masks was examined. Ru exhibits a high etching selectivity both to Si (for Ru buffer layer) and SiO 2 (for Ru etch stopper). This can lead to a simple patterning process that do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b467ea8480b0606f4b0c688d4484826
https://doi.org/10.1016/s0167-9317(02)00534-8
https://doi.org/10.1016/s0167-9317(02)00534-8
Autor:
Shinji Okazaki, Tarou Ogawa, Hiroaki Oizumi, Iwao Nishiyama, Akira Chiba, Hiromasa Hoko, Hiromasa Yamanashi
Publikováno v:
Japanese Journal of Applied Physics. 41:393-398
The temperature rise of an attenuator under synchrotron radiation irradiation was measured with an infrared (IR) camera containing an InSb detection device. Since the measured value changes with the emissivity of the measured sample, in measurement b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0de61b8be25e5ada25432a3c814f4f7
https://doi.org/10.1143/jjap.41.393
https://doi.org/10.1143/jjap.41.393
Autor:
Man-Hyoung Ryoo, Shigeru Shirayone, Hiroaki Oizumi, Shigeo Irie, Shinji Okazaki, Iwao Nishiyama, Ei Yano, Hiromasa Yamanashi
Publikováno v:
Journal of Photopolymer Science and Technology. 14:561-565
One of the important issues in EUVL is the outgassing problem because the contamination caused by the resist outgassing decreases the reflectivity of the reflective mask and the imaging optics. In this report, we evaluated the resist and resin ougass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfb5a5d3a61b306b3507d5ec170e3946
https://doi.org/10.2494/photopolymer.14.561
https://doi.org/10.2494/photopolymer.14.561