Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Hiromasa Suo"'
Autor:
Hiromasa Suo, Tamotsu Yamashita, Kazuma Eto, Akira Miyasaka, Hiroshi Osawa, Tomohisa Kato, Hajime Okumura
Publikováno v:
Japanese Journal of Applied Physics. 61:105502
We investigated the photoluminescence wavelength emitted at room temperature from novel stacking faults with a complicated stacking sequence in the epitaxial layer on p-type 4H-SiC substrate. From analysis of photoluminescence imaging and synchrotron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6178ffe7973caf5b97bb88a624f3ad3
https://doi.org/10.35848/1347-4065/ac8d79
https://doi.org/10.35848/1347-4065/ac8d79
Autor:
Hiromasa Suo, Hajime Okumura, Takeshi Mitani, Naoyoshi Komatsu, Yuichiro Hayashi, Tomohisa Kato
Publikováno v:
Materials Science Forum. 963:71-74
We have developed the bulk growth technique to reduce threading screw dislocations (TSDs) by combining solution growth and PVT growth methods. More than 80 % of TSDs in original seed crystals were successfully converted to Frank defects on basal plan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12b35a52ce5e20c5cca9ca08f5b71efa
https://doi.org/10.4028/www.scientific.net/msf.963.71
https://doi.org/10.4028/www.scientific.net/msf.963.71
Autor:
Fumihiro Fujie, Shunta Harada, Hiromasa Suo, Balaji Raghothamachar, Michael Dudley, Kenji Hanada, Haruhiko Koizumi, Tomohisa Kato, Miho Tagawa, Toru Ujihara
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c59d2883235804e7e818d9e1bf769b
https://doi.org/10.2139/ssrn.3844697
https://doi.org/10.2139/ssrn.3844697
Autor:
Haruhiko Koizumi, Toru Ujihara, Miho Tagawa, Shunta Harada, Kenji Hanada, Fumihiro Fujie, Hiromasa Suo, Tomohisa Kato
Publikováno v:
SSRN Electronic Journal.
We observed the behavior of double Shockley stacking faults (DSFs) in 4H-SiC crystals with nitrogen concentrations of 1.0×1019-2.6×1019 cm−3 over an extensive temperature range (1380-1910 K) by in-situ synchrotron X-ray topography. For a nitrogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3511f94e75e5d2aa368a334cbc72ec0
https://doi.org/10.2139/ssrn.3542923
https://doi.org/10.2139/ssrn.3542923
Autor:
Hidekazu Tsuchida, Hiroshi Osawa, Hajime Okumura, Kazuma Eto, Yuichiro Tokuda, Hiromasa Suo, Tomohisa Kato, Takeshi Ise
Publikováno v:
Journal of Crystal Growth. 498:224-229
N-type 4H-SiC crystals were grown by the physical vapor transport (PVT) method with nitrogen and aluminum (N–Al) co-doping. By using aluminum carbide powder preannealed in nitrogen gas atmosphere as an aluminum doping source, we obtained highly N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::649af1cde7e358dfe92f3a0ed14cba5e
https://doi.org/10.1016/j.jcrysgro.2018.06.019
https://doi.org/10.1016/j.jcrysgro.2018.06.019
Autor:
Shunta Harada, Kenji Hanada, Haruhiko Koizumi, Balaji Raghothamachar, Michael Dudley, Toru Ujihara, Tomohisa Kato, Hiromasa Suo, Fumihiro Fujie, Miho Tagawa
Publikováno v:
Materialia. 20:101246
The expansion of double Shockley stacking faults (DSFs) in an n-type 4H-SiC substrate with a nitrogen concentration of 3.9 × 1019 cm−3 was investigated using in situ synchrotron X-ray topography. DSF expansion was observed to be suppressed and imm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::909c8d73dba2b9d4b52fe674c4818961
https://doi.org/10.1016/j.mtla.2021.101246
https://doi.org/10.1016/j.mtla.2021.101246
Publikováno v:
Journal of Crystal Growth. :126189
The propagation of defects during the hybrid growth, which combines solution growth and physical vapor transport (PVT) growth, for bulk 4H-polytype silicon carbide was examined. During solution growth, more than 80% of the threading screw dislocation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e82992e660d66d92671d332033fc5bb1
https://doi.org/10.1016/j.jcrysgro.2021.126189
https://doi.org/10.1016/j.jcrysgro.2021.126189
Publikováno v:
Journal of Crystal Growth. 470:154-158
P-type 4H–silicon carbide (SiC) crystal growth has been achieved by physical vapor transport using aluminum and nitrogen co-doping. Aluminum carbide with a two-zone heating furnace was used for p-type doping, and yielded homogenous aluminum doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::834a4c8f144b92f6f9b6c703bbee208d
https://doi.org/10.1016/j.jcrysgro.2017.04.025
https://doi.org/10.1016/j.jcrysgro.2017.04.025
Autor:
Yuichiro Tokuda, Hidekazu Tsuchida, Hajime Okumura, Hiroshi Osawa, Takeshi Ise, Tomohisa Kato, Kazuma Eto, Hiromasa Suo
Publikováno v:
Journal of Crystal Growth. 468:879-882
The growth of n-type 4H-SiC crystals has been performed by physical vapor transport (PVT) growth method, with nitrogen and boron (N-B) co-doping. It was revealed that, in the growth of 4H-SiC with N-B co-doping, the generation of double Shockley-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e070807f495c5297fb441b78d5cb61
https://doi.org/10.1016/j.jcrysgro.2016.12.055
https://doi.org/10.1016/j.jcrysgro.2016.12.055
Publikováno v:
Materials Science Forum. 897:3-6
The growth of n-type 4H-SiC crystal was performed by physical vapor transport (PVT) growth method by using nitrogen and aluminum (N-Al) co-doping. Resistivity of N-Al co-doped 4H-SiC was as low as 5.8 mΩcm. The dislocation densities of N-Al co-doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83adfa2bb31cc6dab8df0fdff3134847
https://doi.org/10.4028/www.scientific.net/msf.897.3
https://doi.org/10.4028/www.scientific.net/msf.897.3