Zobrazeno 1 - 10
of 133
pro vyhledávání: '"Hirokuni Hiyama"'
Autor:
Yutaka Terayama, Panart Khajornrungruang, Jihoon Seo, Satomi Hamada, Yutaka Wada, Hirokuni Hiyama
Publikováno v:
Applied Sciences, Vol 14, Iss 18, p 8145 (2024)
It has been difficult to detach abrasive particles smaller than 50 nm from polished surfaces in post-CMP cleaning. During the cleaning process, the residual nano-particles exert shear force in the inevitable shear flow. In order to understand the cle
Externí odkaz:
https://doaj.org/article/e55d6c3ddcbb4d9a868de5a07b1588d4
Autor:
Yingjie Wang, Qiancheng Sun, Wenlong Tang, Li-Na Qiu, Xin-Ping Qu, Satomi Hamada, Yutaka Wada, Hirokuni Hiyama
Publikováno v:
ECS Journal of Solid State Science & Technology; Sep2023, Vol. 12 Issue 9, p1-12, 12p
Autor:
Seonho Jeong, Jongmin Jeong, Yeongil Shin, Youngwook Park, Masashi Kabasawa, Hirokuni Hiyama, Katsuhide Watanabe, Hisanori Matsuo, Yutaka Wada, Haedo Jeong
Publikováno v:
Japanese Journal of Applied Physics. 62:SH1003
In general, the shape of the polished pattern is not flat but has a rounded curved profile. Unlike micro-patterns that have similar scales to pad asperities, macro-patterns have a very large scale compared to asperities, so bulk deformation must also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eb1a2c84d30a5aaf8490d05d39446b1
https://doi.org/10.35848/1347-4065/acc9cd
https://doi.org/10.35848/1347-4065/acc9cd
Autor:
Seokjun Hong, Hirokuni Hiyama, Juhwan Kim, Yutaka Wada, Chulwoo Bae, Satomi Hamada, Taesung Kim
Publikováno v:
Solid State Phenomena. 314:247-252
In chemical mechanical planarization (CMP) processes, ceria is generally used as the abrasive . After the CMP process, many ceria particles adhere to the wafer surface and must be removed prior to subsequent processing. In this study, the effect of v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b579befc623b56e8ff04d1fb1669a10b
https://doi.org/10.4028/www.scientific.net/ssp.314.247
https://doi.org/10.4028/www.scientific.net/ssp.314.247
Publikováno v:
Journal of the Japan Society for Precision Engineering. 86:741-745
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4360ea4c3e3c63ebcd2a6c67e0a5757a
https://doi.org/10.2493/jjspe.86.741
https://doi.org/10.2493/jjspe.86.741
Autor:
Shohei Shima, Akira Fukunaga, Ayako Yano, Naoyuki Handa, Kazuki Matsumoto, Hirokuni Hiyama, Kenji Amagai
Publikováno v:
Journal of the Japan Society for Precision Engineering. 86:65-70
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5fa4c51ce4124913b29fb0a76591bed
https://doi.org/10.2493/jjspe.86.65
https://doi.org/10.2493/jjspe.86.65
Autor:
Yingjie Wang, Bingbing Wu, Li-Na Qiu, Lianfeng Hu, Haijun Cheng, Xin-Ping Qu, Satomi Hamada, Yutaka Wada, Hirokuni Hiyama
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:014001
It is difficult to remove nanoceria abrasives from the SiO2 substrate after the shallow trench isolation (STI) chemical mechanical polishing process. In this work, we studied the cleaning behavior of ceria particles by using an acidic cleaning soluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b76657cd8218adff906637ef214983a
https://doi.org/10.1149/2162-8777/acaeb6
https://doi.org/10.1149/2162-8777/acaeb6
Publikováno v:
ECS Transactions. 92:183-189
In the semiconductor devise manufacturing process especially in the post-CMP cleaning, PVA brushes are widely used for removing contaminants on a wafer. Normally, it is used with chemical solution, so the contaminants are removed with combined effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fb27c0c59394892a4a674fc5d2978dc
https://doi.org/10.1149/09202.0183ecst
https://doi.org/10.1149/09202.0183ecst
Autor:
Satomi Hamada, Yutaka Terayama, Panart Khajornrungruang, Kohei Kusatsu, Hirokuni Hiyama, Keisuke Suzuki, Yutaka Wada
Publikováno v:
ECS Transactions. 92:191-197
Cleaning process is indispensable in Post chemical mechanical polishing (Post-CMP) to remove the abrasive nano-particles remaining on the polished wafer surface. There are two main types of the cleaning process. One is contact cleaning with polyvinyl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::524e29b15ef7a77e32946ab8c113132b
https://doi.org/10.1149/09202.0191ecst
https://doi.org/10.1149/09202.0191ecst
Autor:
Heon-Yul Ryu, Yutaka Wada, Nagendra Prasad Yerriboina, Chan-Hee Lee, Jun-Kil Hwang, Jin-Goo Park, Hirokuni Hiyama, Byoung-Jun Cho, Satomi Hamada
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P3058-P3062
This research was supported by Ansan-Si hidden champion fostering and supporting project funded by Ansan city.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::492ecd830b135664fdac00692c448cb9
https://doi.org/10.1149/2.0101905jss
https://doi.org/10.1149/2.0101905jss