Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Hirokuni Asamizu"'
Autor:
Keiko Masumoto, Hirokuni Asamizu, Kentaro Tamura, Chiaki Kudou, Johji Nishio, Kazutoshi Kojima, Toshiyuki Ohno, Hajime Okumura
Publikováno v:
Materials, Vol 7, Iss 10, Pp 7010-7021 (2014)
We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed t
Externí odkaz:
https://doaj.org/article/bd553eef65eb41988614e749e5ab43c4
Autor:
Hirokuni Asamizu, Hidenori Kitai, Ryosuke Iijima, Johji Nishio, Kazutoshi Kojima, Shinsuke Harada, Akira Miyasaka, Mitsuhiro Kushibe, Ryoji Kosugi
Publikováno v:
Materials Science Forum. 924:432-435
Carrier lifetime in low carrier concentration 4H-SiC epitaxial layers grown on the C-face was enhanced by using carbon implantation and post annealing. The measured carrier lifetime increased with the thickness of the epitaxial layer and was 11.4 µs
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P547-P552
Publikováno v:
MRS Advances. 1:3631-3636
Reduction in background carrier concentration has been investigated for 4H-SiC C-face epitaxial growth in order to be applied for ultra-high voltage power devices. Optimizing epitaxial growth parameters made it possible to achieve 7.6x1013 cm-3 as th
Autor:
Keiko Masumoto, Keiichi Yamada, Johji Nishio, Chiaki Kudou, Hirokuni Asamizu, Kentaro Tamura, Kazutoshi Kojima
Publikováno v:
Materials Science Forum. 858:133-136
The surface quality of epitaxial layers grown on 2° offcut substrates was improved. These substrates require a lower growth temperature and a lower C/Si ratio than their 4° offcut counterparts to suppress macro step bunching. Surface morphology, tr
Autor:
Masayuki Sasaki, Hideki Sako, Kazutoshi Kojima, Tamotsu Yamashita, Hirokuni Asamizu, Kentaro Tamura, Makoto Kitabatake, Chiaki Kudou, Sachiko Ito
Publikováno v:
Materials Science Forum. :367-370
On 4H-SiC Si-face substrates after H2etching, the defect with “line” feature parallel to a step as “bunched-step line” was observed. Using X-ray topography and KOH etching, we confirmed that the bunched-step line originated from basal plane d
Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC
Autor:
Johji Nishio, Chiaki Kudou, Toshiyuki Ohno, Hirokuni Asamizu, Sachiko Ito, Kazutoshi Kojima, Keiko Masumoto, Kentaro Tamura
Publikováno v:
Materials Science Forum. :169-172
The guidelines necessary to improve the n-type doping uniformity on C-face epitaxial growth of 4H-SiC have been examined as far as the practical throughput is maintained, e.g. 3×150 mm wafers with the growth rate higher than 20 μm/h. The flow-chann
Autor:
Toshiyuki Ohno, Chiaki Kudou, Hirokuni Asamizu, Keiko Masumoto, Kentaro Tamura, Johji Nishio, Kazutoshi Kojima
Publikováno v:
Materials Science Forum. :177-180
Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated.
Autor:
James S. Speck, Tammy Ben-Yaacov, Akihiko Murai, Hirokuni Asamizu, Tommy Ive, Steven P. DenBaars, C. G. Van de Walle, Umesh K. Mishra
Publikováno v:
physica status solidi c. 5:3091-3094
We investigated the properties of ZnO layers grown by metalorganic chemical vapor deposition on GaN(0001) templates and ZnO(0001) bulk substrates. Steps and hexagonal pits were observed on the surfaces of the ZnO/GaN films as revealed by atomic force
Autor:
Hisashi Masui, Hitoshi Sato, Mathew C. Schmidt, Hirokuni Asamizu, Shuji Nakamura, Tommy Ive, Steven P. DenBaars, Natalie N. Fellows
Publikováno v:
Japanese Journal of Applied Physics. 47:2112-2118
Electroluminescence (EL) efficiency of the InGaN-based light-emitting diode (LED) is the present subject of discussion. An equivalent circuit model was introduced to treat explicitly four independent current components: leakage, radiative, nonradiati