Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Hirokuni, Tokuda"'
Publikováno v:
IEEE Electron Device Letters. 41:693-696
We report on an Al2O3 /AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with recessed-gate structure and regrown AlGaN barrier. After analyzing the possibility of obtaining high threshold voltage ( ${V}_{\text {th}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc103fd53946c76f4f4cd5f58e6ddf20
https://doi.org/10.1109/led.2020.2985091
https://doi.org/10.1109/led.2020.2985091
Autor:
Mary Clare Sison Escaño, Mutsunori Uenuma, Hirokuni Tokuda, Zenji Yatabe, Melanie David, Yukiharu Uraoka, Joel T. Asubar, Masahiko Tani, Masaaki Kuzuhara
Publikováno v:
Applied Surface Science. 481:1120-1126
We conducted X-ray photoelectron spectroscopy (XPS) and first-principles calculations based on density functional theory (DFT) to confirm the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface. We note that the Ga 3d XPS p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::121b0549655388ade889688ce4ea1bad
https://doi.org/10.1016/j.apsusc.2019.03.196
https://doi.org/10.1016/j.apsusc.2019.03.196
Autor:
Itsuki Nagase, JoelTacla Asubar, RuiShan Low, Shun Urano, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2a0d238c76e7877fb5b4d4c012d1b3b
https://doi.org/10.7567/ssdm.2020.d-10-07
https://doi.org/10.7567/ssdm.2020.d-10-07
Publikováno v:
2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
We investigated the effect of SiN capping of the AlGaN surface during ohmic annealing process on the performance of AlGaN/GaN HEMTs. In comparison with the devices without any capping, devices with SiN capping exhibited small variation in threshold v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa949cb461b7596b750fa44bc2e679d6
https://doi.org/10.1109/imfedk48381.2019.8950755
https://doi.org/10.1109/imfedk48381.2019.8950755
Publikováno v:
Web of Science
High frequency power characteristics of AlGaN/GaN HEMTs with a gate field plate (FP) were studied using on-wafer load-pull measurements and were correlated with the results of current collapse measurements. The load-pull results at 2 GHz indicated th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d26b97f63cd1906b1f1368afe18592ee
https://doi.org/10.1109/iciprm.2019.8819090
https://doi.org/10.1109/iciprm.2019.8819090
Publikováno v:
2019 Compound Semiconductor Week (CSW).
We investigated the effect of AlGaN regrown layer on the device characteristics of Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). From capacitance-voltage (C-V) investigations, it was confirmed that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::876aecb6430feb688417cf8831ecf6af
https://doi.org/10.1109/iciprm.2019.8819286
https://doi.org/10.1109/iciprm.2019.8819286
Publikováno v:
2019 Compound Semiconductor Week (CSW).
We studied on-state breakdown characteristics of AlGaN/GaN MOS-HEMTs with a gate field plate (FP). It was found that the on-state breakdown voltage of the gate-FP device was increased with the increase in the drain current, as compared to the device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0969b4006c651848bdac41dbd805bd53
https://doi.org/10.1109/iciprm.2019.8819284
https://doi.org/10.1109/iciprm.2019.8819284
Autor:
Low, Rui Shan, Asubar, Joel T., Baratov, Ali, Kamiya, Shunsuke, Nagase, Itsuki, Urano, Shun, Kawabata, Shinsaku, Tokuda, Hirokuni, Kuzuhara, Masaaki, Nakamura, Yusui, Naito, Kenta, Motoyama, Tomohiro, Rui, Shan Low, Joel T., Asubar, Ali, Baratov, Shunsuke, Kamiya, Itsuki, Nagase, Shun, Urano, Shinsaku, Kawabata, Hirokuni, Tokuda, Masaaki, Kuzuhara, Yusui, Nakamura, Kenta, Naito, Tomohiro, Motoyama, Zenji, Yatabe
Publikováno v:
Applied Physics Express = Applied Physics Express. 14(3):031004
We report on the fabrication and characterization of AlGaN/GaN metal-insulator-semiconductor (MIS) capacitors and high-electron-mobility transistors (MIS-HEMTs) using a 5 nm thick Al2O3 dielectric deposited by cost-effective and environmental-friendl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61df7cdc155354941faf8b74b4fce502
http://hdl.handle.net/2298/00044023
http://hdl.handle.net/2298/00044023
Publikováno v:
Japanese Journal of Applied Physics. 59:084002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5e8320758e0f0b99e966c9b72e902e5
https://doi.org/10.35848/1347-4065/aba329
https://doi.org/10.35848/1347-4065/aba329
Publikováno v:
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
In this paper, we studied hysteresis in transfer characteristics of GaN-based vertical trench MOSFETs fabricated using different process technologies for n+ -GaN source layer. It was found that the device with epitaxially-grown source region can supp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e676ebacd57fef1e33a8e1322a1b04e
https://doi.org/10.1109/imfedk.2018.8581937
https://doi.org/10.1109/imfedk.2018.8581937