Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Hiroki Imabayashi"'
Publikováno v:
Journal of the Society of Materials Science, Japan. 71:819-823
Publikováno v:
Materials Science in Semiconductor Processing. 162:107536
Autor:
Enrico Angioni, Tim Michael Smeeton, Yohei Nakanishi, Tomohiro Takeshita, Edward Andrew Boardman, Valerie Berryman-Bousquet, Yang Qu, Andrea Zampetti, Iain Hamilton, Okamoto Shota, Masayuki Kanehiro, Hiroki Imabayashi, Hisayuki Utsumi, Takeshi Ishida
Publikováno v:
SID Symposium Digest of Technical Papers. 51:862-865
Autor:
Masayuki Kanehiro, Enrico Angioni, Iain Hamilton, Tim Michael Smeeton, Valerie Berryman-Bousquet, Okamoto Shota, Hisayuki Utsumi, Tomohiro Takeshita, Takeshi Ishida, Yohei Nakanishi, Hiroki Imabayashi, Edward Andrew Boardman, Andrea Zampetti, Yang Qu
Publikováno v:
Journal of the Society for Information Display. 28:499-508
Autor:
Hiroki Imabayashi, Yuto Yasui, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomoyoshi Mishima, Kenji Shiojima
Publikováno v:
Japanese Journal of Applied Physics. 62:SA1012
We applied scanning internal photoemission microscopy (SIPM) to clarify the electrical characteristics on the electrode periphery of Ni/n-GaN Schottky contacts. Two types of Schottky contacts with different electrode formation methods were prepared.
Autor:
Hiroki Imabayashi, Mihoko Maruyama, Masayuki Imanishi, Masatomo Honjo, Kosuke Murakami, Mamoru Imade, Masashi Yoshimura, Kosuke Nakamura, Daisuke Matsuo, Yusuke Mori
Publikováno v:
Optical Materials. 65:38-41
Previously, we demonstrated that the Na-flux coalescence growth technique had high potential for the fabrication of large-diameter, high-quality GaN crystals. This present study investigates the relation between the flux composition (Ga/Na) and void
Autor:
Hiroki Imabayashi, Mihoko Maruyama, Mamoru Imade, Masayuki Imanishi, Masatomo Honjo, Masashi Yoshimura, Kosuke Murakami, Daisuke Matsuo, Yusuke Mori
Publikováno v:
Optical Materials. 65:42-45
In this study, we investigated the growth of GaN polycrystals using the Al-added Na flux method. We studied the effects of Al on accelerating the nucleation and purity of GaN polycrystals. The yields of GaN crystals grown in Al-added Na flux were dra
Publikováno v:
2018 IEEE 3rd International Conference on Big Data Analysis (ICBDA).
In recent years, many users have uploaded data to the cloud for easy storage and sharing with other users. At the same time, security and privacy concerns for the data are growing. Attribute-based encryption (ABE) enables both data security and acces
Publikováno v:
IEEE BigData
In the big data era, many users upload data to cloud while security concerns are growing. By using attribute-based encryption (ABE), users can securely store data in cloud while exerting access control over it. Revocation is necessary for real-world
Autor:
Hiroki Imabayashi, Mamoru Imade, Yuma Todoroki, Yusuke Mori, Masashi Yoshimura, Kosuke Murakami, Mihoko Maruyama, Masayuki Imanishi, Daisuke Matsuo, Hideo Takazawa
Publikováno v:
Journal of Crystal Growth. 427:87-93
In our study, we found that threading dislocation density (TDD) in GaN crystals naturally reduced from ~10 9 cm −2 in a seed to less than ~10 3 cm −2 , just by using the small-sized seed called a “point seed”. However, the mechanism of the dr