Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hiroki Hane"'
Publikováno v:
Chemical Physics Letters. 400:301-307
Ultrashort pulse lasers with 6- and 20-fs durations were utilized for phthalocyanine thin film sample to induce several vibrational modes and vibration amplitude spectra were determined by multi-wavelength measurement technique. From the spectra we c
Publikováno v:
Chemical Physics Letters. 392:390-395
Charge-transfer (CT)-excited state in phthalocyanine (Pc) tin dichloride is observed by real-time vibrational spectroscopy with a 6-fs pulse laser. Transient negative and positive absorbance change were observed for the CT- and Q-bands, respectively.
Autor:
Koutaro Sho, Mikio Katsumata, Taiki Kimura, Shoji Mimotogi, Tatsuhiko Ema, Seiji Nagahara, Fumikatsu Uesawa, Makoto Tominaga, Hiroki Hane, Hiroharu Fujise, Atsushi Ikegami, Masafumi Asano, Hideki Kanai, M. Iwai
Publikováno v:
SPIE Proceedings.
Immersion lithography was applied to 45nm node logic and 0.25um 2 ultra-high density SRAM. The predictable enhancement of focus margin and resolution were obtained for all levels which were exposed by immersion tool. In particular, the immersion lith
Autor:
Tomohiro Sugiyama, Suigen Kyoh, Kohji Hashimoto, Shoji Mimotogi, Hideki Kanai, Maki Miyazaki, Eishi Shiobara, Kazuya Sato, Fumikatsu Uesawa, Kazuhiro Takahata, Koutaro Sho, Hiroki Hane, Hiroharu Fujise, Mikio Katsumata
Publikováno v:
Optical Microlithography XVIII.
In 45nm-node CMOS, the k1 value is around 0.35. In the low-k1 lithography, the robust design for lens aberration and process fluctuation such as mask CD error is required for manufacturing. The technologies of robust design for 45nm-node CMOS are pro
Publikováno v:
Springer Series in Chemical Physics ISBN: 9783540241102
Charge-transfer (CT)-excited state in phthalocyanine tin dichloride is observed by real-time vibrational spectroscopy with a 6-fs pulse laser. The main absorption (Q-band) has no obvious CT character in the primary stage of the photocarrier generatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62138e2019c7f772ad63caf0ca493b0b
https://doi.org/10.1007/3-540-27213-5_144
https://doi.org/10.1007/3-540-27213-5_144
Autor:
Kazuya Iwase, Kumiko Oguni, Hiizu Ohtorii, Hiroyuki Nakano, Masaki Yoshizawa, Shigeru Moriya, Hiroki Hane, Tetsuya Kitagawa, Keiko Amai
Publikováno v:
SPIE Proceedings.
Low-energy electron-beam proximity projection lithography (LEEPL) has been developed for sub-65 nm lithography. Critical dimension (CD) control of resist patterns is critical to be a production-worthy lithography technique. In this study, the LEEPL m