Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hirofumi Watatani"'
Autor:
Yoshiaki Nakata, Hirofumi Watatani, Shirou Ozaki, Yoshiyuki Ohkura, Yasushi Kobayashi, Shunichi Fukuyama, Tomoji Nakamura, Yoshihisa Iba
Publikováno v:
Microelectronic Engineering. 87:370-372
We clarified that interfacial barrier metal oxidation with inter layer dielectric (ILD) could be revealed by X-ray photoelectron spectroscopy (XPS) on the peeled-side of the barrier metal, and the barrier metal oxidation was promoted by fluorine cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e032114ecae636ff217d7ca3020e9a1
https://doi.org/10.1016/j.mee.2009.06.011
https://doi.org/10.1016/j.mee.2009.06.011
Autor:
Yoshiyuki Ohkura, Shunichi Fukuyama, Masafumi Nakaishi, H. Ochimizu, Tamotsu Owada, Tomoji Nakamura, Tsunehisa Sakoda, Yasuo Nara, Atsuhiro Tsukune, N. Asami, Hiroshi Kudo, Masataka Kase, N. Ohara, Hirofumi Watatani, T. Kouno
Publikováno v:
2009 IEEE International Interconnect Technology Conference.
As a practical curing technique of low-k material for 32-nm BEOL technology node, we demonstrated that electron beam (e-beam) irradiation was effective to improve film properties of nano-clustering silica (NCS). We confirmed that by using optimized e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f962dc5b0ef441c26d0f4d8067727c2
https://doi.org/10.1109/iitc.2009.5090368
https://doi.org/10.1109/iitc.2009.5090368
Autor:
S. Takesako, Tomoyuki Kirimura, Yasuo Nara, Hiroshi Kudo, Tamotsu Owada, Hirofumi Watatani, T. Osada, S. Akiyama, Yoshihisa Iba, N. Asami, Akira Uedono, N. Ohara, Masataka Kase, T. Kouno
Publikováno v:
2009 IEEE International Interconnect Technology Conference.
We established novel SiOC (k=2.4) with higher process damage tolerance. The SiOC was deposited using organo-silane with acetylene bond as a precursor of plasma enhanced chemical vapor deposition (PECVD). The precursor takes high concentration of carb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edb335dfee1553915eccbf60b9df098c
https://doi.org/10.1109/iitc.2009.5090373
https://doi.org/10.1109/iitc.2009.5090373
Autor:
Atsuhiro Tsukune, Nobuyuki Ohtsuka, S. Amari, Masaki Haneda, Toshiro Futatsugi, Tamotsu Owada, H. Ochimizu, Hirofumi Watatani, Michie Sunayama, Hiroshi Kudo, Tomoji Nakamura, Toshihiro Sugii, Hideya Matsuyama, Toshihide Suzuki, T. Tabira, Hideki Kitada, Noriyoshi Shimizu
Publikováno v:
2008 International Interconnect Technology Conference.
To further enhance electro-migration resistance, we applied a self-aligned barrier technique to Cu wiring encapsulated with a MnO barrier. This combination of the self-aligned barrier and encapsulation techniques increased maximum current density to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c5aaf863a1fb5e67ff96c2c65d6eca0
https://doi.org/10.1109/iitc.2008.4546942
https://doi.org/10.1109/iitc.2008.4546942
Autor:
Kazuo Kawamura, Kazuya Okubo, Itani Tsukasa, Masafumi Nakaishi, Yanai Kenichi, S. Akiyama, Masataka Kase, Hirofumi Watatani, Yasutoshi Kotaka
Publikováno v:
MRS Proceedings. 1079
We report NiSi and Ni(Pt)Si films with excellent thermal stability showing a particular crystal orientation on Si(001). The Ni-silicide film with a deposition temperature of about 200 °C consists of a conformal domain structure. We examined detail c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af02555a09a501c897f3a2a4e67075d5
https://doi.org/10.1557/proc-1079-n08-09
https://doi.org/10.1557/proc-1079-n08-09
Autor:
Satoru Asai, T. Sakuma, Teruyoshi Yao, Y. Morisaki, Y. Kojima, Atsuhiro Tsukune, T. Miyashita, M. Yamabe, M. Okuno, Iwao Sugiura, Keiji Ikeda, Masafumi Nakaishi, Hirofumi Watatani, Toshihiro Sugii, M. Terahara, Ken Sugimoto, S. Satoh, Noriyoshi Shimizu, I. Hanyuu, Hiroshi Minakata, Shunichi Fukuyama, Kousuke Suzuki, Kenichi Okabe, Masataka Kase, Tetsu Tanaka, Toshihiko Mori, Kenichi Watanabe, T. Watanabe, H. Fukutome, Sadahiro Kishii, Motoshu Miyajima, Tomohiro Kubo, Yoshihisa Iba, Hiroshi Morioka, Y. Hayami
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
We describe the integration of a 45-nm node CMOS for low operation power (LOP) application. The SD extension profile along with a strain channel and a thin-gate-SiON were optimized to keep high drive current at the 45-nm node. A novel STI structure w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b99c035b5cff1e06a8cda90362ca979
https://doi.org/10.1109/iedm.2005.1609264
https://doi.org/10.1109/iedm.2005.1609264
Autor:
I.T. Suzuki, Tsutomu Hosoda, Ken Shono, Yoshiyuki Ohkura, Motonobu Sato, Hirofumi Watatani, I.Y. Mizushima, I.T. Nakamura, Motoshu Miyajima, S. Otsuka, Shunichi Fukuyama, M. Shiozu, Hideya Matsuyama, T. Kouno
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Stress-induced voiding under vias connected to "narrow" Copper (Cu) lines (SIV-N) was observed, for the first time, using newly prepared test structures which consisted of isolated vias between narrow (0.14 mum-wide) and very long (200 mum-long) 2-le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88efe5c5b0c07ef983754029792f0599
https://doi.org/10.1109/iedm.2005.1609302
https://doi.org/10.1109/iedm.2005.1609302
Autor:
Yasutoshi Kotaka, Kenichi Watanabe, Y. Koura, Iwao Sugiura, Hisaya Sakai, Yoshiaki Nakata, N. Misawa, N. Nishikawa, Takashi Suzuki, Masafumi Nakaishi, Y. Mizushima, Tomoji Nakamura, Noriyoshi Shimizu, Yoshihisa Iba, Chihiro J. Uchibori, Motoshu Miyajima, Yuji Setta, F. Sugimoto, S. Otsuka, Hideki Kitada, Kenji Nakano, Satoshi Nakai, Ei Yano, Motonobu Sato, Shunichi Fukuyama, Hirofumi Watatani, Yoshiyuki Ohkura, Toshiyuki Karasawa
Publikováno v:
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..
45 nm-node multilevel Cu interconnects with porous-ultra-low-k have successfully been integrated. Key features to realize 45 nm-node interconnects are as follows: 1) porous ultra-low-k material NCS (nano-clustering silica) has been applied to both wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdced7129a01bb83ce6232c972eb654d
https://doi.org/10.1109/iitc.2005.1499906
https://doi.org/10.1109/iitc.2005.1499906