Zobrazeno 1 - 10
of 174
pro vyhledávání: '"Hirofumi Matsuhata"'
Publikováno v:
CrystEngComm. 24:5922-5929
A BF-STEM image and inserted magnified HR-HAADF-STEM images showing the different lattice-polarity of AlN at each position.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ea8cd2c915e9b2db4d68384349f7d5c
https://doi.org/10.1039/d2ce00652a
https://doi.org/10.1039/d2ce00652a
Autor:
Hirofumi Matsuhata, Takashi Sekiguchi
Publikováno v:
Nihon Kessho Gakkaishi. 62:150-157
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86511db8732e4f1aa09ce0bd3c70577c
https://doi.org/10.5940/jcrsj.62.150
https://doi.org/10.5940/jcrsj.62.150
Publikováno v:
Materia Japan. 58:727-732
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81e34680646fbd3f74565a7dafe64531
https://doi.org/10.2320/materia.58.727
https://doi.org/10.2320/materia.58.727
Autor:
Hirofumi Matsuhata
Publikováno v:
Acta crystallographica. Section A, Foundations and advances. 77(Pt 3)
The contrast of Gjønnes–Moodie (GM) lines which appear in convergent-beam electron diffraction patterns for non-symmorphic space-group crystals is explained using Bloch waves. In the two-dimensional space groups p2mg and pg the Bloch waves for ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a058be54baa562d9fee6063ddf9c3075
https://pubmed.ncbi.nlm.nih.gov/33944801
https://pubmed.ncbi.nlm.nih.gov/33944801
Autor:
Hirofumi Matsuhata, Takashi Sekiguchi
Publikováno v:
Philosophical Magazine. 98:878-898
Morphology of single Shockley-type stacking faults (SFs) generated by recombination enhanced dislocation glide (REDG) in 4H–SiC are discussed and analysed. A complete set of the 12 different dissoc...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9b96c90a318660a472466d51118f39d
https://doi.org/10.1080/14786435.2017.1418540
https://doi.org/10.1080/14786435.2017.1418540
Publikováno v:
Acta Materialia. 221:117360
In the processing of 4H-SiC MOSFET devices, it is crucial to optimize the condition of wet oxidation based on the wafer surface orientation to obtain excellent electronic properties. However, the mechanism of surface oxidation and the effect of surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::422dafadcf2afded2422904adce8cc3d
https://doi.org/10.1016/j.actamat.2021.117360
https://doi.org/10.1016/j.actamat.2021.117360
Autor:
Hajime Okumura, Hirofumi Matsuhata, Takashi Sekiguchi, Hirotaka Yamaguchi, Yuichi Ikuhara, Eita Tochigi
Publikováno v:
Philosophical Magazine. 97:657-670
We investigated two types of V-shaped extended defects on the basal plane in epitaxial 4H-SiC by synchrotron X-ray topography, photoluminescence imaging/spectroscopy and transmission electron microscopy (TEM). One is the (2, 5) stacking fault (in Zhd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9acd47827f247d4d2d1626f0612270e7
https://doi.org/10.1080/14786435.2016.1275869
https://doi.org/10.1080/14786435.2016.1275869
Autor:
Hideki Sako, Hirofumi Matsuhata, Masayuki Sasaki, Masatake Nagaya, Takanori Kido, Kenji Kawata, Tomohisa Kato, Junji Senzaki, Makoto Kitabatake, Hajime Okumura
Publikováno v:
Journal of Applied Physics; 2016, Vol. 119 Issue 13, p135702-1-135702-10, 10p, 12 Diagrams
Autor:
Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata, Daisuke Mori, Kei Inoue, Mina Ryo, Takumi Fujimoto, Takeshi Tawara, Masaki Miyazato, Masaaki Miyajima, Kenji Fukuda, Akihiro Ohtsuki, Tomohisa Kato, Hidekazu Tsuchida, Yoshiyuki Yonezawa, Tsunenobu Kimoto
Publikováno v:
Journal of Applied Physics; 3/7/2016, Vol. 119 Issue 9, p095711-1-095711-9, 9p, 8 Diagrams, 2 Graphs
Publikováno v:
Journal of Crystal Growth. 455:172-180
The boundaries between 3C and 4H-SiC domains on the prismatic planes of hexagonal lattices formed in a 4H-SiC epitaxial film were investigated using both transmission and scanning transmission electron microscopy. These observations determined that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::965c285034ab7563904b4d752512bcb7
https://doi.org/10.1016/j.jcrysgro.2016.10.006
https://doi.org/10.1016/j.jcrysgro.2016.10.006