Zobrazeno 1 - 10
of 267
pro vyhledávání: '"Hirofumi Harada"'
3D Numerical Analysis of the Asymmetric Three-Phase Line of Floating Zone for Silicon Crystal Growth
Publikováno v:
Crystals, Vol 10, Iss 2, p 121 (2020)
A numerical simulation has been carried out to study the asymmetric heat transfer, fluid flow, and three-phase line to explain the phenomenon of the spillage of the melt in floating zone (FZ) silicon growth. A three-dimensional high-frequency electro
Externí odkaz:
https://doaj.org/article/99fedcd46a294c47a6adaf7dd7b0a504
Autor:
Bing Gao, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Koichi Kakimoto
Publikováno v:
Engineering, Vol 1, Iss 3, Pp 378-383 (2015)
To grow high-quality and large-size monocrystal-line silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside t
Externí odkaz:
https://doaj.org/article/643ff3324fb84dc5b45433ed259792d7
Publikováno v:
Crystals, Vol 8, Iss 6, p 244 (2018)
This paper reports the relationship between oxygen concentration and dislocation multiplication in silicon crystals during directional solidification using numerical analysis. Based on the Alexander–Haasen–Sumino model, this analysis involved oxy
Externí odkaz:
https://doaj.org/article/7757d49425c24a40b5f3ca6637677a7c
Autor:
Makoto Inoue, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Bing Gao, Yoshihiro Kangawa, Koichi Kakimoto
Publikováno v:
International Journal of Photoenergy, Vol 2013 (2013)
We studied the effects of cooling process on the generation of dislocations in multicrystalline silicon grown by the vertical Bridgman process. From the temperature field obtained by a global model, the stress relaxation and multiplication of disloca
Externí odkaz:
https://doaj.org/article/86f65a65cf9248f9bc4e7f4ed2130814
Autor:
Shuto Hatsumura, Yuka Hashimoto, Sasuga Hosokawa, Akihiro Nagao, Kazuo Eda, Hirofumi Harada, Kei Ishitsuka, Takashi Okazoe, Akihiko Tsuda
Publikováno v:
The Journal of Organic Chemistry. 87:11572-11582
The present study reports a systematic investigation of the substitution reactions of a series of symmetric and unsymmetric fluoroalkyl carbonates with primary alcohols or amines. The reactivity of the haloalkyl carbonate depends mainly on the electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6115a7a3a461a002f47f21f55e9f8fa8
https://doi.org/10.1021/acs.joc.2c01180
https://doi.org/10.1021/acs.joc.2c01180
Publikováno v:
Dislocations in Solids ISBN: 9780429070914
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da653a645f9efc547f06890cc5b49f3
https://doi.org/10.1201/9780429070914-96
https://doi.org/10.1201/9780429070914-96
Autor:
Satoshi Nakano, Koichi Kakimoto, Hirofumi Harada, Shin Ichi Nishizawa, Xue-Feng Han, Xin Liu, Yoshiji Miyamura
Publikováno v:
Journal of Crystal Growth. 499:8-12
Czochralski silicon (CZ-Si) crystal growth is invariably accompanied by the generation and transport of impurities, such as carbon (C) and oxygen (O), from chemical reactions in the high-temperature range. Reduction of C contamination in the grown cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f56d005bbfcb2ef1bac290ca3872e52
https://doi.org/10.1016/j.jcrysgro.2018.07.020
https://doi.org/10.1016/j.jcrysgro.2018.07.020
Publikováno v:
Journal of Crystal Growth. 489:1-4
High-performance electronics require long carrier lifetimes within their silicon crystals. This paper reports the effects of thermal donors on the lifetimes of carriers in as-grown n-type silicon crystals grown by the Czochralski method. We grew sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0dc609ea568a3a0977ffe8075ca7a47
https://doi.org/10.1016/j.jcrysgro.2018.02.034
https://doi.org/10.1016/j.jcrysgro.2018.02.034
Publikováno v:
Journal of Crystal Growth. 486:56-59
This paper aims to clarify the effect of carbon concentration on carrier lifetime in as-grown n-type and non-doped silicon crystals produced via the Czochralski (CZ) method. We grew n-type and non-doped silicon single crystals with 3-in. diameters al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::090c678bdb43c3a950895fb0e9364229
https://doi.org/10.1016/j.jcrysgro.2018.01.020
https://doi.org/10.1016/j.jcrysgro.2018.01.020