Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Hiroaki Sumitani"'
Autor:
Eisuke Suekawa, Masayoshi Tarutani, Shigehisa Yamamoto, Masayuki Imaizumi, Yuji Ebiike, Takeshi Murakami, Hiroaki Sumitani
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
3.3 kV 4H-SiC MOSFETs with various buffer layer thickness has been fabricated in order to investigate the bipolar degradation associated with the expansion of stacking faults (SFs). The body diode stress tests under DC current of 240 A/cm2 were perfo
Autor:
Sakai Masashi, Nobuyuki Tomita, Masayoshi Tarutani, Yoichiro Mitani, Naoyuki Kawabata, Takeharu Kuroiwa, Hiroaki Sumitani, Takanori Tanaka, Masayuki Imaizumi, Yoshihiko Toyoda, Satoshi Yamakawa
Publikováno v:
Materials Science Forum. :133-136
The reduction of the growth pressure was demonstrated to have the same effect as the addition of chloride-containing gas on preventing the Si nucleation and the epitaxy with high growth rate (>50 μm/h) was achieved by using the decreasing pressure c
Autor:
Hiroaki Sumitani, Yoshihiko Toyoda, Kazuyuki Sugahara, Takeharu Kuroiwa, Yoshiyuki Suehiro, Hiroaki Okabe, Satoshi Yamakawa, Kazuo Kobayashi, Takaaki Tominaga, Yosuke Nakanishi, Hiroyuki Murasaki
Publikováno v:
Materials Science Forum. :820-823
One of the attractive methods to reduce the differential resistance of SiC devices is to make the thickness of a SiC substrate thinner [1]. Therefore, we fabricated SiC Schottky barrier diode (SBD) chips with a thickness below 150 μm and the propert
Autor:
Takeharu Kuroiwa, Tatsushi Sato, Yoshiyuki Nakaki, Hiroaki Sumitani, Hidetaka Miyake, Tomoaki Furusho, Satoshi Yamakawa, Yoshihiko Toyoda, Atsushi Itokazu, Nobuyuki Tomita, Takashi Hashimoto
Publikováno v:
Materials Science Forum. :784-787
The multi-wire electrical discharge slicing (multi-wire EDS), which is a brand-new method for fabricating wafers, is expected to considerably reduce the production cost of SiC wafers by decreasing in the width of kerf and kerf loss. We evaluated, for
Autor:
Masayuki Imaizumi, Hiroaki Sumitani, Yoshihiko Toyoda, Satoshi Yamakawa, Yoichiro Mitani, Masayoshi Tarutani, Takanori Tanaka, Naoyuki Kawabata, Takeharu Kuroiwa, Nobuyuki Tomita
Publikováno v:
Materials Science Forum. :91-94
SiC epitaxial layer with low basal plane dislocation (BPD) density of 0.2/cm2 was successfully grown under higher C/Si ratio, which is found on the investigation about growth conditions. In order to study conversion mechanism of BPDs to threading edg
Autor:
Yukiyasu Nakao, Masayuki Imaizumi, Akihiko Furukawa, Tatsuo Oomori, Shuhei Nakata, Hiroaki Sumitani, Shiro Hino, Naruhisa Miura, Shoyu Watanabe
Publikováno v:
Materials Science Forum. :1097-1100
High speed switching is desired to reduce switching losses of SiC-MOSFETs. In order to realize SiC-MOSFETs capable of high speed switching, we numerically evaluated the electric field induced in SiC-MOSFETs during switching using an equivalent circui
Autor:
Shozo Shikama, Naoki Yutani, Yoshinori Matsuno, Ken Ichi Ohtsuka, Kenichi Kuroda, Hiroaki Sumitani
Publikováno v:
Materials Science Forum. :979-982
The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes (SBDs) with an epilayer thickness between 9.6 and 10 μm and donor concentration (ND) ranging from 4.0x1015 to 5.7x1015 cm-3 was evaluated. It was found that t
Publikováno v:
Materials Science Forum. :585-590
Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystals were experimentally investigated. Annealing temperature and annealing time dependence of acceptor activation and activated hole’s behavior were exami
Autor:
Yoichiro Tarui, Tatsuo Ozeki, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Masayuki Imaizumi, Tatsuo Oomori, Tetsuya Takami, Hiroaki Sumitani, Naruhisa Miura
Publikováno v:
Materials Science Forum. :1285-1288
4H-SiC epilayer channel MOSFETs are fabricated. The MOSFETs have an n- epilayer channel which improves the surface where the MOS channel is formed. By the optimization of the epilayer channel and the MOSFET cell structure, an ON-resistance of 12.9 mc
Autor:
Nahoko Hisata, Satoshi Gonda, Taeho Keem, Ken Enjoji, Hirohisa Fujimoto, Ichiko Misumi, Sunao Aya, Akihiro Fujii, Qiangxian Huang, Hiroaki Sumitani, Takeshi Yamagishi, Tomizo Kurosawa
Publikováno v:
Measurement Science and Technology. 16:2080-2090
We have developed a new atomic force microscope with differential laser interferometers (DLI-AFM), carried out test measurements of the prototype 1D-grating standards with pitches of 100, 80, 60 and 50 nm using the DLI-AFM and evaluated the uncertain