Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hiroaki Narisawa"'
Autor:
Tetsuya Yamamoto, Hiroshi Kano, Yutaka Higo, Kazuhiro Ohba, Tetsuya Mizuguchi, Masanori Hosomi, Kazuhiro Bessho, Minoru Hashimoto, Hiroyuki Ohmori, Takeyuki Sone, Keitaro Endo, Shinya Kubo, Hiroaki Narisawa, Wataru Otsuka, Nobumichi Okazaki, Makoto Motoyoshi, Hajime Nagao, Tsutomu Sagara
Publikováno v:
Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p10P503-1-10P503-6, 6p, 1 Black and White Photograph, 11 Graphs
Publikováno v:
Macromolecular Chemistry and Physics. 196:1419-1430
Strong LCICD (liquid-crystalline induced circular dichroism) was observed when a photochromic dichroic dye, 1, was doped into a cholesteric film of poly[(γ-benzyl L-glutamate)-co-(γ-dodecyl L-glutamate)]. The ICD at the absorption band of anthraqui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20260c433a092a602dad1600e2886425
https://doi.org/10.1002/macp.1995.021960505
https://doi.org/10.1002/macp.1995.021960505
Publikováno v:
Macromolecules. 26:1424-1428
Poly(γ-benzyl L-glutamate-co-γ-dodecyl L-glutamate) doped with an azobenzene derivative was studied. Optimum conditions for the induced circular dichroism (ICD) intensity were explored by varying the cholesteric pitch of the film and the content of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95b491817b147ad641a11c5a34a24882
https://doi.org/10.1021/ma00058a036
https://doi.org/10.1021/ma00058a036
Autor:
Akihiro Maesaka, Takeyuki Sone, Naomi Yamada, Keitaro Endo, Shuichiro Yasuda, Kazuhiro Ohba, Hiroaki Narisawa, Tsunenori Shiimoto, Satoshi Sasaki, Tomohito Tsushima, Akira Kouchiyama, Katsuhisa Aratani, Tetsuya Mizuguchi
Publikováno v:
2007 IEEE International Electron Devices Meeting.
We report a novel nonvolatile dual-layered electrolytic resistance memory composed of a conductive Cu ion activated layer and a thin insulator for the first time. An ON/OFF mechanism of this new type memory is postulated as follows: Cu ions pierce th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdfb88351a703004b83a1754c7af4283
https://doi.org/10.1109/iedm.2007.4419064
https://doi.org/10.1109/iedm.2007.4419064
Autor:
T. Sagara, T. Kikutani, Hiroaki Narisawa, Nobumichi Okazaki, Masanori Hosomi, W. Ohtsuka, H. Mori, M. Motoyoshi, M. Nakamura, M. Watanabe, C. Fukamoto, I. Yamamura, K. Moriyama, Hajime Yamagishi, M. Shouji, Kaori Tai, H. Yamada, Kazuhiro Bessho, Hiroshi Kano, R. Hachino
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
In this paper, we study to reduce the switching dispersion and improve 0/1 separation of Magnetic Tunnel Junction (MTJ) elements in order to realize high density MRAM. Various kinds of MTJ sizes and shapes have been evaluated and conclude that in ell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c38f7d71bf04212052b563dadb4c78fe
https://doi.org/10.1109/vlsit.2004.1345370
https://doi.org/10.1109/vlsit.2004.1345370
Autor:
M. Motoyoshi, Hiroaki Narisawa, H. Itoh, H. Kano, K. Moriyama, H. Mori, K. Bessho, C. Fukumoto
Publikováno v:
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97d4b14e3764c2150a8270d20cf1dbf1
https://doi.org/10.7567/ssdm.2002.d-2-1
https://doi.org/10.7567/ssdm.2002.d-2-1
Autor:
Hiroaki Narisawa, Hiroshi Kano, Masanori Hosomi, Kazuhiro Ohba, Yutaka Higo, Kazuhiro Bessho, K. Yamane
Publikováno v:
Applied Physics Letters. 87:082502
A calculation of the intrinsic spin transfer switching current Ic0 is realized in the magnetic tunnel junctions (MTJs). Ic0 is determined by the distribution of Ic in repeated measurements, assuming the linear decrease of the thermal stability by inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d24f641dadef386f64b16fd3f8824d06
https://doi.org/10.1063/1.2011795
https://doi.org/10.1063/1.2011795
Autor:
Wataru Otsuka, Masanori Hosomi, Takeyuki Sone, Tsutomu Sagara, Minoru Hashimoto, Kazuhiro Ohba, Shinya Kubo, Takashi Yamamoto, Makoto Motoyoshi, Kazuhiro Bessho, Tetsuya Mizuguchi, Hiroshi Kano, Yutaka Higo, Hiroaki Narisawa, Nobumichi Okazaki, Keitaro Endo, Hajime Nagao, Hiroyuki Ohmori
Publikováno v:
Journal of Applied Physics. 97:10P503
The reliability in magnetoresistive random access memory (MRAM) write operation was investigated for both toggle and asteroid memory chips developed with 0.18μm CMOS process. Thermally activated magnetization reversal, being the dominant origin of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e8c605559e8921cd3a185c13a01eb52
https://doi.org/10.1063/1.1851879
https://doi.org/10.1063/1.1851879